UEDONO Akira
- Articles
- Depth Profile of Vacancy-Type Defects in B+-Implanted Si with a SiO2 Overlayer by a Variable-Energy Positron Beam
A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
Appl. Phys. Lett. 53, 25-27 (1988)./53/p.25-27, 1988-01 - Variable-Energy Positron-Beam Studies of SiO2/Si Irradiated by Ionizing Radiation
A. Uedono; S. Tanigawa; K. Suzuki; K. Watanabe
Appl. Phys. Lett. 53, 473-475 (1988)./53/p.473-475, 1988-01 - Metal/Oxide/Semiconductor Interface Investigated by Monoenergetic Positrons
A. Uedono; S. Tanigawa; Y. Ohji
Phys. Lett. A 133, 82-84 (1988)./133/p.82-84, 1988-01 - 単色陽電子線による半導体の表面・界面近傍の欠陥評価
上殿明良; 谷川庄一郎
応用物理 58, 918-923 (1989)./58/p.918-923, 1989-01 - Distribution of He Implanted Into Metals Probed by Monoenergetic Positrons
A. Uedono; S. Tanigawa; H. Sakairi
Positron Annihilation , eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 413-415./p.413-415., 1989-01 - Ion-Implantation-Induced Damage in Si Studied by Monoenergetic Positrons
A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 690-692./p.690-692., 1989-01 - The Accumulation and Inversion States of SiO2/Si Interface of MOS Structure Investigated by a Variable-Energy Positron Beam
A. Uedono; S. Tanigawa; Y. Ohji
Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 711-713./p.711-713., 1989-01 - Depth Profiles of Vacancy-Type Defect in Si+-Implanted GaAs Resulting From Rapid Thermal Annealing
J.-L. Lee; K.-H Shim; J.S. Kim; H.M. Park; D.S. Ma; S. T...
J. Appl. Phys. 65, 396-397 (1989)./65/p.396-397, 1989-01 - A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam
A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
Jpn. J. Appl. Phys. 28, 1293-1297 (1989)./28/p.1293-1297, 1989-01 - 陽電子消滅法による材料表面の解析
上殿明良; 谷川庄一郎
表面科学 11, 598-603 (1990)./11/p.598-603, 1990-01 - Depth Profiles of Vacancy-Type Defects in Ion-Implanted Si Studied by Monoenergetic Positron Beam
A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) p. 495-500./p.495-500., 1990-01 - Photoplastic Effect and Characteristics of Dislocations in Organic Semiconductors
K. Kojima; A. Uedono
Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) p. 1673-1678./p.1673-1678., 1990-01 - Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
A. Uedono; S. Tanigawa; H. Funamoto; A. Nishikawa; K. Ta...
Jpn. J. Appl. Phys. 29, 555-559 (1990)./29/p.555-559, 1990-01 - Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
A. Uedono; S. Tanigawa
Jpn. J. Appl. Phys. 29, 909-912 (1990)./29/p.909-912, 1990-01 - Vacancy-type Defects in Si+-Implanted GaAs and Its Effects on Electrical Activation by Rapid Thermal Annealing
J.-L. Lee; A. Uedono; S. Tanigawa; J. Y. Lee
J. Appl. Phys. 67, 6153-6158 (1990)./67/p.6153-6158, 1990-01 - Study of Near Surface Defects in He-Implanted Stainless Steels by Monoenergetic Positron Beam
A. Uedono; S. Tanigawa; H. Sakairi
J. Nucl. Mater. 173, 307-312 (1990)./173/p.307-312, 1990-01 - Vacancy-Type Defects in As+-Implanted SiO2(43 nm)/Si Probed with Slow Positrons
A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
Jpn. J. Appl. Phys. 29, 1867-1872 (1990)./29/p.1867-1872, 1990-01 - Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
A. Uedono; S. Tanigawa
Jpn. J. Appl. Phys. 29, L346-L348 (1990)./29/p.L346-L348, 1990-01 - 表面・界面プローブとしての低速陽電子
上殿明良; 谷川庄一郎
表面技術 41, 355-360 (1990)./41/p.355-360, 1990-01 - Vacancy-Type Defects and Their Annealing Processes in Ion-Implanted Si Studied by a Variable-Energy Positron Beam
A. Uedono; L. Wei; S. Tanigawa; J. Sugiura; M. Ogasawara
Proc. of Int. Conf. on Evolution in Beam Applications (Takasaki, 1991, Japan) p. 73-78./p.73-78., 1991-01 - Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
K. Terashima; E. Tokizaki; A. Uedono; L. Wei; H. Kondo; S...
Proc. of Int. Conf. on Evolution in Beam Applications (Takasaki, 1991, Japan) p. 187-190./p.187-190., 1991-01 - Defect Production in Phosphorus Ion-Implanted SiO2(43 nm)/Si Studied by a Variable-Energy Positron Beam
A. Uedono; L. Wei; C. Dosho; H. Kondo; S. Tanigawa; J. S...
Jpn. J. Appl. Phys. 30, 201-206 (1991)./30/p.201-206, 1991-01 - Release Processes of He Implanted in Cu and Ni Studied by a Monoenergetic Positron Beam
A. Uedono; S. Tanigawa; H. Sakairi
J. Nucl. Mater. 184, 191-196 (1991)./184/p.191-196, 1991-01 - Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
A. Uedono; L. Wei; C. Dosho; H. Kondo; S. Tanigawa; M. T...
Jpn. J. Appl. Phys. 30, 1597-1603 (1991)./30/p.1597-1603, 1991-01 - Effects of the Fermi Level on Defects in Be+-Implanted GaAs Studied by a Monoenergetic Positron Beam
A. Uedono; L. Wei; Y. Tabuki; H. Kondo; S. Tanigawa; K. ...
Jpn. J. Appl. Phys. 30, L2002-L2005 (1991)./30/p.L2002-L2005, 1991-01 - more...
- Depth Profile of Vacancy-Type Defects in B+-Implanted Si with a SiO2 Overlayer by a Variable-Energy Positron Beam