UEDONO Akira
- Articles
- Study of Grown-in Defects in InP by the Positron Labeling Technique and Variable Energy Positron Beam
Y. Iwase; A. Uedono; S. Tanigawa; H. Araki
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 753-755./p.753-755, 1985-01 - The Temperature Dependence of a Positron Trapping Effect in Glassy Metals
A. Uedono; Y. Iwase; S. Tanigawa
Positron Annihilation, edited by P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore 1985) p. 865-867./p.865-867., 1985-01 - Defects in Helium Implanted Metals Studied by Monoenergetic Positron Beam
Y. Iwase; A. Uedono; S. Tanigawa; H. Sakairi
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 868-870./p.868-870, 1985-01 - Precision Experiments on the Divacancy Effect in Dilute Al Alloys
S. Tanigawa; K. Ito; A. Morisue; A. Uedono; Y. Iwase; S. ...
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 886-888./p.886-888., 1985-01 - Application of the Variable Energy Positron Beam to the Study of Si/SiO2 Interface
Y. Iwase; A. Uedono; S. Tanigawa
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 977-979./p.977-979., 1985-01 - 同時比較検出による陽電子消滅ドップラー拡がりの精密測定
岩瀬義倫; 上殿明良; 谷川庄一郎; 鈴木敬愛
Radioisotopes 34, 195-200 (1985)./34/p.195-200, 1985-01 - A Study of Agglomeration and Release Processes of Helium Implanted in Nickel by a Variable Energy Positron Beam
S. Tanigawa; Y. Iwase; A. Uedono; H. Sakairi
J. Nucl. Mater. 133&134, 463-467 (1985)./133&134/p.463-467, 1985-01 - Generation of Thermal Muonium in Vacuum
A.P. Mills; Jr.; J. Imazato; S. Saitoh; A. Uedono; Y. Kaw...
Phys. Rev. Lett. 56, 1463-1466 (1986)./56/p.1463-1466, 1986-01 - 単一エネルギー低速陽電子を用いた表面解析装置
上殿明良; 谷川庄一郎
Radioisotopes 37, 217-220 (1988)./37/p.217-220, 1988-01 - 単色陽電子線を用いたイオン注入に伴う格子欠陥分布の検出
上殿明良; 谷川庄一郎
Ionics 153, 1-11 (1988)./153/p.1-11, 1988-01 - Defect Creation Caused by Ion Implantation and Activation Behavior by Rapid Thermal Annealing on Semiconducting Materials
J.-L. Lee; K.-H. Shin; J.S. Kim; H.M. Park; D.S. Ma; S. ...
J. Korean Int. of Telematic and Electronics 25, 1447-1457 (1988)./25/p.1447-1457, 1988-01 - Defect Characterization of Si+-Implanted GaAs by Monoenergetic Positron Beam Technique
J.-L. Lee; K.-H. Shin; S. Tanigawa; A. Uedono; J.S. Kim; ...
J. de Phys. Colloque C4, 457-460 (1988)./p.457-460, 1988-01 - Depth Profiles of Ion-Implantation Induced Vacancy-Type Defects in GaAs and Si Observed by Slow Positron
J.-L. Lee; J.S. Kim; H.M. Park; D.S. Ma; S. Tanigawa; A. ...
Appl. Phys. Lett. 53, 1302-1304 (1988)./53/p.1302-1304, 1988-01 - Detection of Helium Implanted into Nickel by Slow Positrons
A. Uedono; S. Tanigawa; H. Sakairi
Phys. Lett. A. 129, 249-252 (1988)./129/p.249-252, 1988-01 - Depth Profile of Vacancy-Type Defects in B+-Implanted Si with a SiO2 Overlayer by a Variable-Energy Positron Beam
A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
Appl. Phys. Lett. 53, 25-27 (1988)./53/p.25-27, 1988-01 - Variable-Energy Positron-Beam Studies of SiO2/Si Irradiated by Ionizing Radiation
A. Uedono; S. Tanigawa; K. Suzuki; K. Watanabe
Appl. Phys. Lett. 53, 473-475 (1988)./53/p.473-475, 1988-01 - Metal/Oxide/Semiconductor Interface Investigated by Monoenergetic Positrons
A. Uedono; S. Tanigawa; Y. Ohji
Phys. Lett. A 133, 82-84 (1988)./133/p.82-84, 1988-01 - 単色陽電子線による半導体の表面・界面近傍の欠陥評価
上殿明良; 谷川庄一郎
応用物理 58, 918-923 (1989)./58/p.918-923, 1989-01 - Distribution of He Implanted Into Metals Probed by Monoenergetic Positrons
A. Uedono; S. Tanigawa; H. Sakairi
Positron Annihilation , eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 413-415./p.413-415., 1989-01 - Ion-Implantation-Induced Damage in Si Studied by Monoenergetic Positrons
A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 690-692./p.690-692., 1989-01 - The Accumulation and Inversion States of SiO2/Si Interface of MOS Structure Investigated by a Variable-Energy Positron Beam
A. Uedono; S. Tanigawa; Y. Ohji
Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 711-713./p.711-713., 1989-01 - Depth Profiles of Vacancy-Type Defect in Si+-Implanted GaAs Resulting From Rapid Thermal Annealing
J.-L. Lee; K.-H Shim; J.S. Kim; H.M. Park; D.S. Ma; S. T...
J. Appl. Phys. 65, 396-397 (1989)./65/p.396-397, 1989-01 - A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam
A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
Jpn. J. Appl. Phys. 28, 1293-1297 (1989)./28/p.1293-1297, 1989-01 - 陽電子消滅法による材料表面の解析
上殿明良; 谷川庄一郎
表面科学 11, 598-603 (1990)./11/p.598-603, 1990-01 - Depth Profiles of Vacancy-Type Defects in Ion-Implanted Si Studied by Monoenergetic Positron Beam
A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) p. 495-500./p.495-500., 1990-01 - more...
- Study of Grown-in Defects in InP by the Positron Labeling Technique and Variable Energy Positron Beam