UEDONO Akira
- Articles
- 筑波大学における放射性同位元素を用いた低速陽電子線発生装置
上殿明良; 谷川庄一郎
放射線 18, 41-54 (1992)./18/p.41-54, 1992-01 - 単色陽電子線による表面・界面近傍の格子欠陥の検出
谷川庄一郎; 上殿明良
放射線 18, 83-98 (1992)./18/p.83-98, 1992-01 - 陽電子消滅誘起オ－ジェ電子分光
上殿明良
化学と工業 45, 989-990 (1992)./45/p.989-990, 1992-01 - ミクロなプロ－ブとして用いた低速陽電子
上殿明良; 谷川庄一郎
センサ技術 12, 50-54 (1992)./12/p.50-54, 1992-01 - ポジトロン消滅と材料の解析
上殿明良; 谷川庄一郎
表面 30, 588-597 (1992)./30/p.588-597, 1992-01 - ドップラー拡がり測定と寿命測定
上殿明良
Radioisotopes 41, 474-482 (1992)./41/p.474-482, 1992-01 - 低速陽電子ビ－ムの発生
谷川庄一郎; 上殿明良; 鈴木良一
Radioisotopes 41, 536-542 (1992)./41/p.536-542, 1992-01 - 自動温度可変消滅γ線ドップラー拡がり測定装置の製作と金属の熱平衡状態測定への応用
上殿明良; 河野孝央; 谷川庄一郎
Radioisotopes 41, 570-573 (1992)./41/p.570-573, 1992-01 - 半導体の欠陥研究
上殿明良
Radioisotopes 41, 600-610 (1992)./41/p.600-610, 1992-01 - The Effect of Point Defects Introduced by Proton Irradiation on Positron Annihilation in Si
Y. K. Cho; H. Kondo; T. Kubota; H. Nakashima; T. Kawano; ...
Materials Science Forum/105/110/p.925-928, 1992-01 - Oxygen Microclusters in Quenched Si Studied by Positron Annihilation
A. Uedono; Y. Ujihira; A. Ikari; H. Haga; O. Yoda
Materials Science Forum/105/110/p.1301-1304, 1992-01 - Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions
A. Uedono; L. Wei; C. Dosho; Y. Tabuki; H. Kondo; S. Tan...
Materials Science Forum/105/110/p.1471-1474, 1992-01 - A Diffusion of Positrons by an Electric Field in MOS Transistors
A. Uedono; L. Wei; Y. Tabuki; H. Kondo; S. Tanigawa; Y. ...
Materials Science Forum/105/110/p.1475-1478, 1992-01 - Vacancy-Type Defects in Si+- and B+-Implanted Si Probed by a Monoenergetic Positron Beam
A. Uedono; L. Wei; Y. Tabuki; H. Kondo; S. Tanigawa; J. ...
Materials Science Forum/105/110/p.1479-1482, 1992-01 - Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation
A. Uedono; L. Wei; Y. Tabuki; H. Kondo; S. Tanigawa; K. ...
Materials Science Forum/105/110/p.1483-1486, 1992-01 - Variation of Free Volumes in Polyvinyl Alcohol Studied by Positron Annihilation
Y. Suda; A. Uedono; Y. Ujihira
Materials Science Forum/105/110/p.1721-1724, 1992-01 - Increase of I4 at Melting Point Found in Polyethylene and Serious Thermal Hysteresis Found in Polypropylene
M. Tanaka; K. Takebe; A. Uedono; Y. Ujihira; K. Horie; T....
Materials Science Forum/105/110/p.1737-1740, 1992-01 - Free Volumes in Amine-Cured Epoxy Studied by Positron Annihilation
E. Ueda; A. Uedono; Y. Ujihira; S. Yamashita; T. Naito; K...
Materials Science Forum/105/110/p.1745-1748, 1992-01 - Free-Volumes in Polypropylene Probed by Positron Annihilation
A. Uedono; Y. Ohko; S. Watauchi; Y. Ujihira
Proc. of Int. Symp. on Material Chemistry in Nuclear Environment (Tsukuba, 1992, Japan) p. 479-487./p.479-487, 1992-01 - Nucleation of Oxygen Precipitates in a Quenched Czochralski Silicon Crystal
A. Ikari; H. Haga; O. Yoda; A. Uedono; Y. Ujihira
Materials Research Society Symposium Proceedings/262/p.69-74, 1992-01 - Point Defect Assisted Crystal Growth of Bulk ZnSe
K. Terashima; E. Tokizaki; H. Kondo; S. Tanigawa; A. Uedono
Materials Research Society Symposium Proceedings/262/p.111-116, 1992-01 - Evaluation of Vacancy-Type Defects in SIMOX Substrates by a Slow Positron Beam and a Pulsed Positron Beam
H. Kametani; H. Akiyama; Y. Yamaguchi; M. Koumaru; L. We...
Materials Research Society Symposium Proceedings/262/p.235-240, 1992-01 - Characterization of Defects in Heavily Si-Doped GaAs by a Monoenergetic Positron Beam
A. Uedono; Y. Ujihira; L. Wei; S. Tanigawa
Materials Research Society Symposium Proceedings/262/p.277-282, 1992-01 - Characterization of Metal-Oxide-Silicon Interfaces by Monoenergetic Positron Beam
Y. Ohji; A. Uedono; L. Wei; Y. Tabuki; S. Tanigawa
Materials Research Society Symposium Proceedings/262/p.313-318, 1992-01 - Defects Introduced by Low Dose Be-Implantation Probed by a Monoenergetic Positron Beam
A. Uedono; Y. Ujihira; L. Wei; Y. Tabuki; S. Tanigawa; K....
Materials Research Society Symposium Proceedings/262/p.325-330, 1992-01 - more...
- 筑波大学における放射性同位元素を用いた低速陽電子線発生装置