UEDONO Akira

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Articles
  • 単一エネルギー低速陽電子を用いた表面解析装置
    上殿明良; 谷川庄一郎
    Radioisotopes 37, 217-220 (1988)./37/p.217-220, 1988-01
  • 単色陽電子線を用いたイオン注入に伴う格子欠陥分布の検出
    上殿明良; 谷川庄一郎
    Ionics 153, 1-11 (1988)./153/p.1-11, 1988-01
  • Defect Creation Caused by Ion Implantation and Activation Behavior by Rapid Thermal Annealing on Semiconducting Materials
    J.-L. Lee; K.-H. Shin; J.S. Kim; H.M. Park; D.S. Ma; S. ...
    J. Korean Int. of Telematic and Electronics 25, 1447-1457 (1988)./25/p.1447-1457, 1988-01
  • Defect Characterization of Si+-Implanted GaAs by Monoenergetic Positron Beam Technique
    J.-L. Lee; K.-H. Shin; S. Tanigawa; A. Uedono; J.S. Kim; ...
    J. de Phys. Colloque C4, 457-460 (1988)./p.457-460, 1988-01
  • Depth Profiles of Ion-Implantation Induced Vacancy-Type Defects in GaAs and Si Observed by Slow Positron
    J.-L. Lee; J.S. Kim; H.M. Park; D.S. Ma; S. Tanigawa; A. ...
    Appl. Phys. Lett. 53, 1302-1304 (1988)./53/p.1302-1304, 1988-01
  • Detection of Helium Implanted into Nickel by Slow Positrons
    A. Uedono; S. Tanigawa; H. Sakairi
    Phys. Lett. A. 129, 249-252 (1988)./129/p.249-252, 1988-01
  • Depth Profile of Vacancy-Type Defects in B+-Implanted Si with a SiO2 Overlayer by a Variable-Energy Positron Beam
    A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
    Appl. Phys. Lett. 53, 25-27 (1988)./53/p.25-27, 1988-01
  • Variable-Energy Positron-Beam Studies of SiO2/Si Irradiated by Ionizing Radiation
    A. Uedono; S. Tanigawa; K. Suzuki; K. Watanabe
    Appl. Phys. Lett. 53, 473-475 (1988)./53/p.473-475, 1988-01
  • Metal/Oxide/Semiconductor Interface Investigated by Monoenergetic Positrons
    A. Uedono; S. Tanigawa; Y. Ohji
    Phys. Lett. A 133, 82-84 (1988)./133/p.82-84, 1988-01
  • 単色陽電子線による半導体の表面・界面近傍の欠陥評価
    上殿明良; 谷川庄一郎
    応用物理 58, 918-923 (1989)./58/p.918-923, 1989-01
  • Distribution of He Implanted Into Metals Probed by Monoenergetic Positrons
    A. Uedono; S. Tanigawa; H. Sakairi
    Positron Annihilation , eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 413-415./p.413-415., 1989-01
  • Ion-Implantation-Induced Damage in Si Studied by Monoenergetic Positrons
    A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
    Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 690-692./p.690-692., 1989-01
  • The Accumulation and Inversion States of SiO2/Si Interface of MOS Structure Investigated by a Variable-Energy Positron Beam
    A. Uedono; S. Tanigawa; Y. Ohji
    Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 711-713./p.711-713., 1989-01
  • Depth Profiles of Vacancy-Type Defect in Si+-Implanted GaAs Resulting From Rapid Thermal Annealing
    J.-L. Lee; K.-H Shim; J.S. Kim; H.M. Park; D.S. Ma; S. T...
    J. Appl. Phys. 65, 396-397 (1989)./65/p.396-397, 1989-01
  • A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam
    A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
    Jpn. J. Appl. Phys. 28, 1293-1297 (1989)./28/p.1293-1297, 1989-01
  • 陽電子消滅法による材料表面の解析
    上殿明良; 谷川庄一郎
    表面科学 11, 598-603 (1990)./11/p.598-603, 1990-01
  • Depth Profiles of Vacancy-Type Defects in Ion-Implanted Si Studied by Monoenergetic Positron Beam
    A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
    Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) p. 495-500./p.495-500., 1990-01
  • Photoplastic Effect and Characteristics of Dislocations in Organic Semiconductors
    K. Kojima; A. Uedono
    Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) p. 1673-1678./p.1673-1678., 1990-01
  • Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
    A. Uedono; S. Tanigawa; H. Funamoto; A. Nishikawa; K. Ta...
    Jpn. J. Appl. Phys. 29, 555-559 (1990)./29/p.555-559, 1990-01
  • Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
    A. Uedono; S. Tanigawa
    Jpn. J. Appl. Phys. 29, 909-912 (1990)./29/p.909-912, 1990-01
  • Vacancy-type Defects in Si+-Implanted GaAs and Its Effects on Electrical Activation by Rapid Thermal Annealing
    J.-L. Lee; A. Uedono; S. Tanigawa; J. Y. Lee
    J. Appl. Phys. 67, 6153-6158 (1990)./67/p.6153-6158, 1990-01
  • Study of Near Surface Defects in He-Implanted Stainless Steels by Monoenergetic Positron Beam
    A. Uedono; S. Tanigawa; H. Sakairi
    J. Nucl. Mater. 173, 307-312 (1990)./173/p.307-312, 1990-01
  • Vacancy-Type Defects in As+-Implanted SiO2(43 nm)/Si Probed with Slow Positrons
    A. Uedono; S. Tanigawa; J. Sugiura; M. Ogasawara
    Jpn. J. Appl. Phys. 29, 1867-1872 (1990)./29/p.1867-1872, 1990-01
  • Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
    A. Uedono; S. Tanigawa
    Jpn. J. Appl. Phys. 29, L346-L348 (1990)./29/p.L346-L348, 1990-01
  • 表面・界面プローブとしての低速陽電子
    上殿明良; 谷川庄一郎
    表面技術 41, 355-360 (1990)./41/p.355-360, 1990-01
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