UEDONO Akira

Researcher's full information

Articles
  • B+, P+, As+ and Si+ Ion Implantation Induced Defects in Silicon Studied by a Variable-Energy Positron Beam
    J. Sugiura; M. Ogasawara; A. Uedono; L. Wei; S. Tanigawa
    Materials Research Society Symposium Proceedings/p.1055-1060, 1992-01
  • Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam
    A. Uedono; Y. Ujihira; L. Wei; Y. Tabuki; S. Tanigawa; J....
    Materials Research Society Symposium Proceedings/262/p.1061-1067, 1992-01
  • The Depth Profiles of Ion Implantation Induced Vacancy-Type Defects Probed by a Monoenergetic Positron Beam
    A. Uedono; L. Wei; S. Tanigawa; J. Sugiura; M. Ogasawara...
    Radiation Effects and Defects in Solids 124, 31-41 (1992)./124/p.31-41, 1992-01
  • Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography
    M. Tachibana; S. Motomura; A. Uedono; Q. Tang; K. Kojima
    Jpn. J. Appl. Phys. 31, 2202-2205 (1992)./31/p.2202-2205, 1992-01
  • Characterization of Diamond Films by Means of a Pulsed Positron Beam
    R. Suzuki; Y. Kobayashi; T. Mikado; H. Ohgaki; M. Chiwak...
    Jpn. J. Appl. Phys. 31, 2237-2240 (1992)./31/p.2237-2240, 1992-01
  • 陽電子寿命-ドップラー拡がり相関測定によるポジトロニウムと分子の反応の解析
    上殿明良; 鈴木良一; 谷川庄一郎
    Radioisotopes 41, 611-617 (1992)./41/p.611-617, 1992-01
  • Vacancies and Interstitial Clusters in As-Grown GaAs Probed by Positron Annihilation
    A. Uedono; S. Fujii; L. Wei; S. Tanigawa
    Inst. Phys. Conf. Ser. 129, Chapter 6, p. 513-518 (1993)./p.513-518, 1993-01
  • Formation of Oxygen Clusters in Quenched Cz- and MCz-Si Crystals
    A. Ikari; H. Haga; O. Yoda; A. Uedono; S. Tanigawa
    Materials Science Forum/117/118/p.69-72, 1993-01
  • Application of Age-Momentum Correlation Measurements for Studies of the Formation of Positronium and Its Reactions in Liquids
    A. Uedono; R. Suzuki; S. Tanigawa
    J. de Phys. IV Colloque C4 3, 143-145 (1993)./p.143-145, 1993-01
  • Characterization of SiO2 films Grown on Si Substrates by Monoenergetic Positron Beam
    A. Uedono; L. Wei; S. Tanigawa; R. Suzuki; H. Ohgaki; T. ...
    J. de Phys. IV Colloque C4 3, 177-183 (1993)./p.177-183, 1993-01
  • Defects in Vitreous SiO2 Probed by Positron Annihilation
    A. Uedono; L. Wei; X. Li; S. Tanigawa
    J. de Phys. IV Colloque C4 3, 209-211 (1993)./p.209-211, 1993-01
  • Positron Annihilation in Electron Irradiated Cz-Si
    A. Uedono; Y. Ujihira; A. Ikari; H. Haga; O. Yoda
    Hyperfine Interactions 79, 615-619 (1993)./p.615-619, 1993-01
  • Defects in Separation by Implanted Oxygen Wafer Probed by a Monoenergetic Positron Beam
    A. Uedono; S. Watauchi; Y. Ujihira; L. Wei; S. Tanigawa; ...
    Hyperfine Interactions 79, 621-625 (1993)./p.621-625, 1993-01
  • The Study of Native Defect in as-Grown GaAs by Positron Annihilation
    S. Fujii; A. Uedono; S. Tanigawa
    Hyperfine Interactions 79, 719-723 (1993)./p.719-723, 1993-01
  • Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
    K. Terashima; E. Tokizaki; A. Uedono; Y. Ujihira
    Jpn. J. Appl. Phys. 32, 225-230 (1993)./32/p.225-230, 1993-01
  • Positron Annihilation in Vitreous Silica Glasses
    A. Uedono; S. Tanigawa
    Jpn. J. Appl. Phys. 32, 2687-2691 (1993)./32/p.2687-2691, 1993-01
  • Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
    A. Uedono; L. Wei; S. Tanigawa; R. Suzuki; H. Ohgaki; T. ...
    Jpn. J. Appl. Phys. 32, 3682-3686 (1993)./32/p.3682-3686, 1993-01
  • Positron Annihilation in a Metal/Oxide/Semiconductor Studied by Using a Pulsed Monoenergetic Positron Beam
    A. Uedono; L. Wei; S. Tanigawa; R. Suzuki; H. Ohgaki; T. ...
    J. Appl. Phys. 74, 7251-7256 (1993)./74/p.7251-7256, 1993-01
  • Oxygen Clusters in As-Grown Cz-Si Crystals Probed by Positron Annihilation
    A. Ikari; K. Kawakami; H. Haga; A. Uedono; L. Wei; T. Ka...
    Materials Science Forum/143/147/p.1583-1588, 1994-01
  • Characterization of Thin Films by a Pulsed Positron Beam
    R. Suzuki; T. Mikado; H. Ohgaki; M. Chiwaki; T. Yamazaki...
    AIP Conf. Proc. 202, 84-91 (1994)./202/p.84-91, 1994-01
  • Point Defects in As-Grown and Ion Implanted GaAs Probed by a Monoenergetic Positron Beam
    A. Uedono; S. Fujii; L. Wei; S. Tanigawa
    AIP Conf. Proc. 202, 92-100 (1994)./202/p.92-100, 1994-01
  • Characterization of SiO2 by Monoenergetic Positron Beams
    A. Uedono; S. Watauchi; Y. Ujihira; L. Wei; S. Tanigawa; ...
    AIP Conf. Proc. 202, 101-106 (1994)./202/p.101-106, 1994-01
  • Defects in Electron Irradiated Amorphous SiO2 Probed by Positron Annihilation
    A. Uedono; S. Watauchi; Y. Ujihira; O. Yoda
    Hyperfine Interactions 84, 225-230 (1994)./p.225-230, 1994-01
  • Characterization of Silicon Dioxide Deposited by Low-Temperature CVD Using TEOS and Ozone by Monoenergetic Positron Beams
    A. Uedono; L. Wei; S. Tanigawa; R. Suzuki; H. Ohgaki; T. ...
    Hyperfine Interactions 84, 231-236 (1994)./p.231-236, 1994-01
  • Localized Positronium Atoms in Porous Structures Studied by 2D-ACAR
    A. Uedono; S. Tanigawa
    Hyperfine Interactions 84, 237-242 (1994)./p.237-242, 1994-01
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