UEDONO Akira
- Articles
- Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions
A. Uedono; L. Wei; C. Dosho; Y. Tabuki; H. Kondo; S. Tan...
Materials Science Forum/105/110/p.1471-1474, 1992-01 - A Diffusion of Positrons by an Electric Field in MOS Transistors
A. Uedono; L. Wei; Y. Tabuki; H. Kondo; S. Tanigawa; Y. ...
Materials Science Forum/105/110/p.1475-1478, 1992-01 - Vacancy-Type Defects in Si+- and B+-Implanted Si Probed by a Monoenergetic Positron Beam
A. Uedono; L. Wei; Y. Tabuki; H. Kondo; S. Tanigawa; J. ...
Materials Science Forum/105/110/p.1479-1482, 1992-01 - Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation
A. Uedono; L. Wei; Y. Tabuki; H. Kondo; S. Tanigawa; K. ...
Materials Science Forum/105/110/p.1483-1486, 1992-01 - Variation of Free Volumes in Polyvinyl Alcohol Studied by Positron Annihilation
Y. Suda; A. Uedono; Y. Ujihira
Materials Science Forum/105/110/p.1721-1724, 1992-01 - Increase of I4 at Melting Point Found in Polyethylene and Serious Thermal Hysteresis Found in Polypropylene
M. Tanaka; K. Takebe; A. Uedono; Y. Ujihira; K. Horie; T....
Materials Science Forum/105/110/p.1737-1740, 1992-01 - Free Volumes in Amine-Cured Epoxy Studied by Positron Annihilation
E. Ueda; A. Uedono; Y. Ujihira; S. Yamashita; T. Naito; K...
Materials Science Forum/105/110/p.1745-1748, 1992-01 - Free-Volumes in Polypropylene Probed by Positron Annihilation
A. Uedono; Y. Ohko; S. Watauchi; Y. Ujihira
Proc. of Int. Symp. on Material Chemistry in Nuclear Environment (Tsukuba, 1992, Japan) p. 479-487./p.479-487, 1992-01 - Nucleation of Oxygen Precipitates in a Quenched Czochralski Silicon Crystal
A. Ikari; H. Haga; O. Yoda; A. Uedono; Y. Ujihira
Materials Research Society Symposium Proceedings/262/p.69-74, 1992-01 - Point Defect Assisted Crystal Growth of Bulk ZnSe
K. Terashima; E. Tokizaki; H. Kondo; S. Tanigawa; A. Uedono
Materials Research Society Symposium Proceedings/262/p.111-116, 1992-01 - Evaluation of Vacancy-Type Defects in SIMOX Substrates by a Slow Positron Beam and a Pulsed Positron Beam
H. Kametani; H. Akiyama; Y. Yamaguchi; M. Koumaru; L. We...
Materials Research Society Symposium Proceedings/262/p.235-240, 1992-01 - Characterization of Defects in Heavily Si-Doped GaAs by a Monoenergetic Positron Beam
A. Uedono; Y. Ujihira; L. Wei; S. Tanigawa
Materials Research Society Symposium Proceedings/262/p.277-282, 1992-01 - Characterization of Metal-Oxide-Silicon Interfaces by Monoenergetic Positron Beam
Y. Ohji; A. Uedono; L. Wei; Y. Tabuki; S. Tanigawa
Materials Research Society Symposium Proceedings/262/p.313-318, 1992-01 - Defects Introduced by Low Dose Be-Implantation Probed by a Monoenergetic Positron Beam
A. Uedono; Y. Ujihira; L. Wei; Y. Tabuki; S. Tanigawa; K....
Materials Research Society Symposium Proceedings/262/p.325-330, 1992-01 - B+, P+, As+ and Si+ Ion Implantation Induced Defects in Silicon Studied by a Variable-Energy Positron Beam
J. Sugiura; M. Ogasawara; A. Uedono; L. Wei; S. Tanigawa
Materials Research Society Symposium Proceedings/p.1055-1060, 1992-01 - Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam
A. Uedono; Y. Ujihira; L. Wei; Y. Tabuki; S. Tanigawa; J....
Materials Research Society Symposium Proceedings/262/p.1061-1067, 1992-01 - The Depth Profiles of Ion Implantation Induced Vacancy-Type Defects Probed by a Monoenergetic Positron Beam
A. Uedono; L. Wei; S. Tanigawa; J. Sugiura; M. Ogasawara...
Radiation Effects and Defects in Solids 124, 31-41 (1992)./124/p.31-41, 1992-01 - Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography
M. Tachibana; S. Motomura; A. Uedono; Q. Tang; K. Kojima
Jpn. J. Appl. Phys. 31, 2202-2205 (1992)./31/p.2202-2205, 1992-01 - Characterization of Diamond Films by Means of a Pulsed Positron Beam
R. Suzuki; Y. Kobayashi; T. Mikado; H. Ohgaki; M. Chiwak...
Jpn. J. Appl. Phys. 31, 2237-2240 (1992)./31/p.2237-2240, 1992-01 - 陽電子寿命-ドップラー拡がり相関測定によるポジトロニウムと分子の反応の解析
上殿明良; 鈴木良一; 谷川庄一郎
Radioisotopes 41, 611-617 (1992)./41/p.611-617, 1992-01 - Vacancies and Interstitial Clusters in As-Grown GaAs Probed by Positron Annihilation
A. Uedono; S. Fujii; L. Wei; S. Tanigawa
Inst. Phys. Conf. Ser. 129, Chapter 6, p. 513-518 (1993)./p.513-518, 1993-01 - Formation of Oxygen Clusters in Quenched Cz- and MCz-Si Crystals
A. Ikari; H. Haga; O. Yoda; A. Uedono; S. Tanigawa
Materials Science Forum/117/118/p.69-72, 1993-01 - Application of Age-Momentum Correlation Measurements for Studies of the Formation of Positronium and Its Reactions in Liquids
A. Uedono; R. Suzuki; S. Tanigawa
J. de Phys. IV Colloque C4 3, 143-145 (1993)./p.143-145, 1993-01 - Characterization of SiO2 films Grown on Si Substrates by Monoenergetic Positron Beam
A. Uedono; L. Wei; S. Tanigawa; R. Suzuki; H. Ohgaki; T. ...
J. de Phys. IV Colloque C4 3, 177-183 (1993)./p.177-183, 1993-01 - Defects in Vitreous SiO2 Probed by Positron Annihilation
A. Uedono; L. Wei; X. Li; S. Tanigawa
J. de Phys. IV Colloque C4 3, 209-211 (1993)./p.209-211, 1993-01 - more...
- Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions