UEDONO Akira
- Articles
- Impurity Effect on the Creation of Point-Defects in GaAs and InP Investigated by a Slow Positron Beam
L. Wei; S. Tanigawa; A. Uedono
Hyperfine Interactions 84, 243-248 (1994)./p.243-248, 1994-01 - Defects in As-Grown Si Probed by Positron Annihilation
A. Uedono; L. Wei; T. Kawano; S. Tanigawa; A. Ikari; K. ...
Trans. Mat. Res. Soc. Jpn. 14B, 1297-1300 (1994)./p.1297-1300, 1994-01 - The Diffusion Length of Positrons in Different Si Wafers
S. Tanigawa; L. Wei; A. Uedono
Trans. Mat. Res. Soc. Jpn. 14B, 1301-1304 (1994)./p.1301-1304, 1994-01 - Defects in SiO2 Films Deposited on Si Substrates Probed by Monoenergetic Positron Beams
A. Uedono; L. Wei; S. Tanigawa; R. Suzuki; H. Ohgaki; T. ...
Trans. Mat. Res. Soc. Jpn. 14B, 1373-1376 (1994)./p.1373-1376, 1994-01 - Defects in HB-GaAs Probed by Positron Annihilation
A. Uedono; T. Kawano; L. Wei; S. Tanigawa; S. Fujii
Trans. Mat. Res. Soc. Jpn. 14B, 1377-1380 (1994)./p.1377-1380, 1994-01 - Study of Diamond Films Synthesized on Si Substrates by Monoenergetic Positron Beams
A. Uedono; L. Wei; S. Tanigawa; R. Suzuki; H. Ohgaki; T. ...
Trans. Mat. Res. Soc. Jpn. 14B, 1575-1578 (1994)./p.1575-1578, 1994-01 - SiO2 films Deposited on Si Substrates by Monoenergetic Positron Beams
A. Uedono; L. Wei; S. Tanigawa; R. Suzuki; H. Ohgaki; T. ...
J. Appl. Phys. 75, 216-222 (1994)./75/p.216-222, 1994-01 - Positron Annihilation in Proton Irradiated Czochralski-Grown Si
A. Uedono; Y.K. Cho; S. Tanigawa; A. Ikari
Jpn. J. Appl. Phys. 33, 1-5 (1994)./33/p.1-5, 1994-01 - Vacancy-Type Defects in Be-implanted InP
L. Wei; A. Uedono; S. Tanigawa; K. Wada; H. Nakanishi
Jpn. J. Appl. Phys. 33, 33-36 (1994)./33/p.33-36, 1994-01 - Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
A. Ikari; H. Haga; A. Uedono; Y. Ujihira; O. Yoda
Jpn. J. Appl. Phys. 33, 1723-1727 (1994)./33/p.1723-1727, 1994-01 - Positronium Formation in SiO2 Films Grown on Si Substrates Studied by Monoenergetic Positron Beams
A. Uedono; L. Wei; S. Tanigawa; R. Suzuki; H. Ohgaki; T. ...
J. Appl. Phys. 75, 3822-3828 (1994)./75/p.3822-3828, 1994-01 - Defects in SiO2/Si Structures Probed by Using a Monoenergetic Positron Beam
A. Uedono; L. Wei; S. Tanigawa; Y. Ohji
Jpn. J. Appl. Phys. 33, 3330-3334 (1994)./33/p.3330-3334, 1994-01 - 陽電子消滅による電子線照射石英ガラスの欠陥の検出
綿打敏司; 上殿明良; 依田修; 氏平祐輔
日本化学会会誌 505-511 (1994)./p.505-511, 1994-01 - Defects in Electron Irradiated Vitreous SiO2 Probed by Positron Annihilation
A. Uedono; T. Kawano; S. Tanigawa; H. Itoh
J. Phys. Condens. Matter 6, 8669-8677 (1994)./6/p.8669-8677, 1994-01 - Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
A. Ikari; K. Kawakami; H. Haga; A. Uedono; L. Wei; T. Ka...
Jpn. J. Appl. Phys. 33, 5585-5589 (1994)./33/p.5585-5589, 1994-01 - Application of Positron Age-Momentum Correlation Measurement to the Study of Defects in Electron Irradiated Synthetic Silica Glass
S. Watauchi; A. Uedono; Y. Ujihira
J. Appl. Phys. 76, 4553-4559 (1994)./76/p.4553-4559, 1994-01 - Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beam
A. Uedono; S. Tanigawa; R. Suzuki; H. Ohgaki; T. Mikado
Jpn. J. Appl. Phys. 33, 6286-6290 (1994)./33/p.6286-6290, 1994-01 - Oxygen microclusters in Czochralski-grown Si probed by positron annihilation
A. Uedono; T. Kawano; L. Wei; S. Tanigawa; A. Ikari; K. ...
Jpn. J. Appl. Phys. 33, L1131-L1134 (1994)./33/p.L1131-L1134, 1994-01 - Defects introduced by Ar plasma exposure in GaAs probed by monoenergetic positron beam
A. Uedono; T. Kawano; S. Tanigawa; K. Wada; H. Nakanishi
Jpn. J. Appl. Phys. 33, L1374-L1377 (1994)./33/p.L1374-L1377, 1994-01 - 低速陽電子によるSiO2膜の評価
上殿明良; 谷川庄一郎
応用物理 64, 43-46 (1995)./64/p.43-46, 1995-01 - 陽電子消滅による高分子材料の評価
上殿明良; 谷川庄一郎
高分子 44, 136-140 (1995)./44/p.136-140, 1995-01 - 陽電子消滅による高分子材料評価
上殿明良; 河野孝央; 谷川庄一郎; 伴めぐみ; 京藤倫久
住友電気 147, 168-173 (1995)./147/p.168-173, 1995-01 - Positron Studies of Oxide-Semiconductor Structures
A. Uedono; L. Wei; T. Kawano; S. Tanigawa; R. Suzuki; H. ...
J. de Phys. IV Colloque C1 5, 49-56 (1995)./p.49-56, 1995-01 - Plasma Induced Defects in GaAs Probed by a Monoenergetic Positron Beam
A. Uedono; L. Wei; T. Kawano; S. Tanigawa; K. Wada; H. N...
J. de Phys. IV Colloque C1 5, 87-90 (1995)./p.87-90, 1995-01 - Free Volumes in Polystyrene Probed by Positron Annihilation
A. Uedono; T. Kawano; L. Wei; S. Tanigawa; M. Ban; K. Kyoto
J. de Phys. IV Colloque C1 5, 199-203 (1995)./p.199-203, 1995-01 - more...
- Impurity Effect on the Creation of Point-Defects in GaAs and InP Investigated by a Slow Positron Beam