UEDONO Akira
- Articles
- Environmentally Stable Chemically Amplified Resist
Y. Kameyama; H. Tomiyasu; M. Tsukamoto; T. Niinomi; Y. T...
Proc. of Int. Conf. of International Society for Optical Engineering 3049, 238-247 (1997)./p.238-247, 1997-01 - Moderation of Positrons Generated by an Electron Linac
R. Suzuki; T. Ohdaira; T. Mikado; A. Uedono; H. Ohgaki; T...
Materials Science Forum/255/257/p.114-118, 1997-01 - Positron Lifetime Study of Semiconductor Thin Films
R. Suzuki; T. Ohdaira; A. Uedono; S. Ishibashi; A. Matsu...
Materials Science Forum/255/257/p.714-717, 1997-01 - Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams
A. Uedono; T. Kitano; M. Watanabe; T. Moriya; N. Komuro; ...
Jpn. J. Appl. Phys. 36, 969-974 (1997)./36/p.969-974, 1997-01 - Annealing Properties of Defects in B+- and F+-Implanted Si Studied Using Monoenergetic Positron Beams
A. Uedono; T. Kitano; K. Hamada; T. Moriya; T. Kawano; S....
Jpn. J. Appl. Phys. 36, 2571-2580 (1997)./36/p.2571-2580, 1997-01 - Defects in the Ti/GaAs System Probed by Monoenergetic Positron Beams
A. Uedono; S. Fujii; T. Moriya; T. Kawano; S. Tanigawa; R...
J. Phys. Condens. Matter 9, 6827-6835 (1997)./9/p.6827-6835, 1997-01 - Transition and Relaxation Processes of Polyethylene, Polypropylene, and Polystyrene Studied by Positron Annihilation
A. Uedono; T. Kawano; S. Tanigawa; M. Ban; M. Kyoto; T. ...
J. Polym. Sci. B 35, 1601-1609 (1997)./35/p.1601-1609, 1997-01 - Positron Annihilation Studies of Defects in 3C-SiC Hot-Implanted with Nitrogen and Aluminum Ions
H. Itoh; A. Uedono; T. Ohshima; Y. Aoki; M. Yoshikawa; I....
Appl. Phys. A 65, 315-323 (1997)./65/p.315-323, 1997-01 - Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
A. Uedono; H. Itoh; T. Ohshima; R. Suzuki; T. Ohdaira; S....
Jpn. J. Appl. Phys. 36, 6650-6660 (1997)./36/p.6650-6660, 1997-01 - A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
A. Uedono; K. Ozaki; H. Ebe; T. Moriya; S. Tanigawa; K. ...
Jpn. J. Appl. Phys. 36, 6661-6667 (1997)./36/p.6661-6667, 1997-01 - Characterization of Residual Defects in Cubic Silicon Carbide Subjected to Hot-Implantation and Subsequent Annealing
H. Itoh; T. Ohshima; Y. Aoki; K. Abe; M. Yoshikawa; I. N...
J. Appl. Phys. 82, 5339-5347 (1997)./82/p.5339-5347, 1997-01 - Evidence for Formation of n+-GaAs layer in Pd/Ge ohmic contact to n-type GaAs
J.-L. Lee; Y.-T. Kim; J.S. Kwak; H.K. Baik; A. Uedono; S....
J. Appl. Phys. 82, 5460-5464 (1997)./82/p.5460-5464, 1997-01 - 対向型陽電子消滅γ線ドップラー拡がり測定装置の製作
森和照; 上殿明良; 谷川庄一郎; 中居克彦
Radioisotopes 47, 623-627 (1998)./47/p.623-627, 1998-01 - Study on Thermal Annealing of Vacancies in Ion-Implanted 3C-SiC by Positron Annihilation
T. Ohshima; A. Uedono; H. Itoh; K. Abe; R. Suzuki; T. Oh...
Materials Science Forum/264/268/p.745-748, 1998-01 - Characterization of Intrinsic Defects in CuInSe2 Films by Monoenergetic Positron Beams
R. Suzuki; T. Ohdaira; S. Ishibashi; A. Uedono; S. Niki; ...
Int. Phys. Conf. Ser. 152, Sec. E, p. 757-760 (1998)./p.757-760, 1998-01 - Defects and Their Annealing Properties in B+-Implanted Hg0.78Cd0.22Te Studied by Positron Annihilation
A. Uedono; H. Ebe; M. Tanaka; S. Tanigawa; K. Yamamoto; Y...
Jpn. J. Appl. Phys. 37, 786-791 (1998)./37/p.786-791, 1998-01 - Investigation of Vacancy-Type Defects in P+-Implanted 6H-SiC by Monoenergetic Positron Beams
A. Uedono; T. Ohshima; H. Itoh; R. Suzuki; T. Ohdaira; S....
Jpn. J. Appl. Phys. 37, 2422-2429 (1998)./37/p.2422-2429, 1998-01 - Defects in Ion Implanted Hg0.78Cd0.22Te Probed by Monoenergetic Positron Beams
A. Uedono; H. Ebe; M. Tanaka; R. Suzuki; T. Ohdaira; S. ...
Jpn. J. Appl. Phys. 37, 3910-3914 (1998)./37/p.3910-3914, 1998-01 - Open Spaces and Molecular Motions of Polyether-Based Network Polymers Probed by Positron Annihilation
A. Uedono; S. Tanigawa; M. Watanabe; A. Nishimoto
J. Polym. Sci. B 36, 1919-1925 (1998)./36/p.1919-1925, 1998-01 - Open Spaces in the Subsurface Region of Polyethylene Probed by a Monoenergetic Positron Beams
A. Uedono; R. Suzuki; T. Ohdaira; T. Uozumi; M. Ban; M. ...
J. Polym. Sci. B 36, 2597-2605 (1998)./36/p.2597-2605, 1998-01 - Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
R. Suzuki; T. Ohdaira; A. Uedono; Y.K. Cho; S. Yoshida; Y...
Jpn. J. Appl. Phys. 37, 4636-4643 (1998)./37/p.4636-4643, 1998-01 - Characterization of Vacancy-Type Defects and Phosphorus-Donors Introduced in 6H-SiC by Ion Implantation
T. Ohshima; A. Uedono; K. Abe; H. Itoh; Y. Aoki; M. Yosh...
Appl. Phys. A 67, 407-412 (1998)./67/p.407-412, 1998-01 - イオン注入及び注入後熱処理した３C-SiC中の残留欠陥の研究
大島武; 伊藤久義; 上殿明良; 鈴木良一; 石田夕起; 高橋徹夫; 吉川正人; 児島一聡; 大平俊之; 梨山勇; 谷川庄一郎; 奥村元...
電子技術総合研究所彙報 62, 31-38 (1999)./62,/p.31-38, 1999-01 - Defects in Synthesized and Natural Diamond Probed by Positron Annihilation
A. Uedono; S. Fujii; N. Morishita; H. Itoh; S. Tanigawa; ...
J. Phys. Condens. Matter. 11, 4109-4122 (1999)./11/p.4109-4122, 1999-01 - Annealing Behaviors of Defects in Electron Irradiated Diamond Probed by Positron Annihilation
A. Uedono; K. Mori; N. Morishita; H. Itoh; S. Tanigawa S...
J. Phys. Condens. Matter. 11, 4925-4934 (1999)./11/p.4925-4934, 1999-01 - more...
- Environmentally Stable Chemically Amplified Resist