UEDONO Akira
- Articles
- Open Spaces and Molecular Motions of Acrylic Epoxy Based Network Polymers Probed by Positron Annihilation
A. Uedono; W. Aiko; Y. Yamamoto; T. Nakamichi; S. Tanigawa
J. Polym. Sci. B 37, 2875-2880 (1999)./37/p.2875-2880, 1999-01 - Defects in p+-Gate Metal-Oxide-Semiconductor Structures Probed by Monoenergetic Positron Beams
A. Uedono; M. Hiketa; S. Tanigawa; T. Kitano; T. Kubota; ...
J. Appl. Phys. 86, 5385-5391 (1999)./86/p.5385-5391, 1999-01 - Oxygen-Related Defects in O+-implanted 6H-SiC Studied by a Monoenergetic Positron Beam
A. Uedono; S. Tanigawa; T. Ohshima; H. Itoh; Y. Aoki; M. ...
J. Appl. Phys. 86, 5392-5398 (1999)./86/p.5392-5398, 1999-01 - Relationship Between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
T. Ohshima; A. Uedono; H. Itoh; M. Yoshikawa; K. Kojima; ...
Materials Science Forum/338/342/p.857-860, 2000-01 - Open Spaces and Relaxation Processes in the Subsurface Region of Polypropylene Probed by Monoenergetic Positron Beams
A. Uedono; R. Suzuki; T. Ohdaira; T. Mikado; S. Tanigawa...
J. Polym. Sci. B 38, 101-107 (2000)./38/p.101-107, 2000-01 - Positron Annihilation in Silicon in Thermal Equilibrium at High Temperature
A. Uedono; M. Watanabe; S. Takasu; T. Sabato; S. Tanigawa
J. Phys. Condens. Matter. 12, 719-728 (2000)./12/p.719-728, 2000-01 - Annealing Properties of Defects During Si-on-Insulator Fabrication by Low-Dose Oxygen Implantation Studied by Monoenergetic Positron Beams
A. Uedono; S. Tanigawa; A. Ogura; H. Ono; R. Suzuki; T. ...
J. Appl. Phys. 87, 1659-1665 (2000)./87/p.1659-1665, 2000-01 - Crystallization of an Amorphous Layer in P+-implanted 6H-SiC Studied by Monoenergetic Positron Beams
A. Uedono; S. Tanigawa; T. Ohshima; H. Itoh; M. Yoshikaw...
J. Appl. Phys. 87, 4119-4125 (2000)./87/p.4119-4125, 2000-01 - Oxygen-Related Defects Introduced by As+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
A. Uedono; M. Muramatsu; T. Ubukata; H. Tanino; S. Tanig...
Jpn. J. Appl. Phys. 39, 6126-6129 (2000)./39/p.6126-6129, 2000-01 - Low Temperature Buffer Growth for Modulation Doped SiGe/Ge/SiGe Heterostructures with High Hole Mobility
T. Ueno; T. Irisawa; Y. Shiraki; A. Uedono; S. Tanigawa
Thin Solid Films 369, 320-323 (2000)./369/p.320-323, 2000-01 - Positron Annihilation Studies of Defects in Ion Implanted Palladium
H. Abe; A. Uedono; H. Uchida; A. Komatsu; S. Okada; H. Itoh
Materials Science Forum/363/365/p.156-158, 2001-01 - Temperature and Irradiation Effects on Positronium Formation in Polycarbonate
Z.Q. Chen; T. Suzuki; A. Uedono; S. Tanigawa; Y. Ito
Materials Science Forum/363/365/p.297-299, 2001-01 - Positron Annihilation in Si and Si-Related Materials in Thermal Equilibrium at High Temperature
) A. Uedono; M. Watanabe; T. Ichihashi; S. Takasu; M. Mu...
Materials Science Forum/363/365/p.472-474, 2001-01 - Characterization of Low Temperature Grown Si Layer for SiGe Pseudo-Substrates by Positron Annihilation Spectroscopy
T. Ueno; T. Irisawa; Y. Shiraki; A. Uedono; S. Tanigawa; ...
J. Crys. Growth 227-228, 761-765 (2001)./p.761-765, 2001-01 - Positron Annihilation Study of Vacancy-Type Defects in Silicon Carbide Co-Implanted with Aluminum and Carbon Ions
T. Ohshima; A. Uedono; H. Abe; Z.Q. Chen; H. Itoh; M. Yo...
Physica B 308-310, 652-655 (2001)./308-310/p.652-655, 2001-01 - Open Spaces and Molecular Motions in Carbon-Black- and Silica-Loaded SBR Investigated Using Positron Annihilation
A. Uedono; S. Fukui; M. Muramatsu; T. Ubukata; S. Kimura...
J. Polym. Sci. B 39, 835-842 (2001)./39/p.835-842, 2001-01 - A Study of Vacancy-Type Defects Introduced by the Carburization of Si by Monoenergetic Positron Beams
A. Uedono; M. Muramatsu; T. Ubukata; M. Watanabe; T. Ich...
J. Appl. Phys. 89, 3606-3610 (2001)./89/p.3606-3610, 2001-01 - Evaluation of SOI Substrates by Positron Annihilation
A. Uedono; A. Ogura; S. Tanigawa
Jpn. J. Appl. Phys. 40, 2903-2906 (2001)./40/p.2903-2906, 2001-01 - Study of Defects in GaN Grown by the Two-Flow Metalorganic Chemical Vapor Deposition Technique Using Monoenergetic Positron Beams
A. Uedono; S.F. Chichibu; Z.Q. Chen; M. Sumiya; R. Suzuk...
J. Appl. Phys. 90, 181-186 (2001)./90/p.181-186, 2001-01 - Free Volume in Polycarbonate Studied by Positron Annihilation: Effects of Free Radicals and Trapped Electrons on Positronium Formation
Z.Q. Chen; T. Suzuki; K. Kondo; A. Uedono; Y. Ito
Jpn. J. Appl. Phys. 40, 5036-5040 (2001)./40/p.5036-5040, 2001-01 - Nanoporous Structure of Methyl-Silsesquioxane Films Using Monoenergetic Positron Beams
A. Uedono; Z.Q. Chen; R. Suzuki; T. Ohdaira; T. Mikado; S...
J. Appl. Phys. 90, 2498-2503 (2001)./90/p.2498-2503, 2001-01 - Oxygen-Related Defects in Low-Dose Separation-by-implanted Oxygen Wafers Probed by Monoenergetic Positron Beams
A. Uedono; Z.Q. Chen; A. Ogura; H. Ono; R. Suzuki; T. Oh...
J. Appl. Phys. 90, 6026-6031 (2001)./90/p.6026-6031, 2001-01 - Vacancy-Type Defects in BaTiO3/SrTiO3 Structures Probed by Monoenergetic Positron Beams
A. Uedono; K. Shimoyama; M. Kiyohara; Z.Q. Chen; K. Yama...
J. Appl. Phys. 91, 5307-5312 (2001)./91/p.5307-5312, 2001-01 - Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy
S.F. Chichibu; A. Setoguchi; A. Uedono; K. Yoshimura; M. ...
Appl. Phys. Lett. 78, 28-30 (2001)./78/p.28-30, 2001-01 - Oxygen-Related Defects in Silicon-On-Insulator Wafers Probed Monoenergetic Positron Beams
A. Uedono; H. Yamamoto; A. Nakano; A. Ogura; T. Ohdaira; ...
2002 IEEE Int. SOI Conf. Proc. p.196-197./p.196-197., 2002-01 - more...
- Open Spaces and Molecular Motions of Acrylic Epoxy Based Network Polymers Probed by Positron Annihilation