TOKO Kaoru
- Articles
- Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111)
Ryota Takabe; Hara Kosuke O.; Baba Masakazu; Du Weijie; Shima...
JOURNAL OF APPLIED PHYSICS/115(19)/pp.193510-1-193510-8, 2014-05 - Perpendicular magnetic anisotropy of Mn4N films on MgO(001) and SrTiO3(001) substrates
Yasutomi Yoko; Ito Keita; Sanai Tatsunori; Toko Kaoru; Suemas...
JOURNAL OF APPLIED PHYSICS/115(17), 2014-05 - Self-organization of Ge(111)/Al/glass structures through layer exchange in metal-induced crystallization
Toko K.; Nakazawa K.; Saitoh N.; Yoshizawa N.; Suemasu T.
CRYSTENGCOMM/16(41)/pp.9590-9595, 2014 - Al-induced low-temperature crystallization for large-grained Ge(111) thin films on amorphous insulators
都甲 薫; 末益 崇
Technical report of IEICE. SDM/114(1)/pp.27-29, 2014-04 - Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange
Numata Ryohei; Toko Kaoru; Usami Noritaka; Suemasu Takashi
Thin Solid Films/557/pp.147-150, 2014-04 - Structural Characterization of Polycrystalline Ge Thin Films on Insulators Formed by Diffusion-enhanced Al-Induced Layer Exchange
Numata Ryohei; Toko Kaoru; Oya Naoki; Usami Noritaka; Suem...
Japanese Journal of Applied Physics/53(4)/p.04EH03, 2014-04 - Al-induced Crystallization of Amorphous-Ge Thin Films on Conducting Layer Coated Glass Substrates
Nakazawa Koki; Toko Kaoru; Usami Noritaka; Suemasu Takashi
Japanese Journal of Applied Physics/53(4)/p.04EH01, 2014-04 - Orientation control of Ge thin films by underlayer-selected Al-induced crystallization
Toko Kaoru; Nakazawa K.; Saitoh N.; Yoshizawa N.; Usami N.; Su...
CrystEngComm/16(13)/pp.2578-2583, 2014-04 - Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange
Toko Kaoru; Numata R.; Saitoh N.; Yoshizawa N.; Usami N.; Suem...
JOURNAL OF APPLIED PHYSICS/115(9)/p. 094301, 2014-03 - Growth promotion of Al-induced crystallized Ge films on insulators by inserting Ge membranes into Al layers
Toko Kaoru
Thin Solid Films/557/p.143, 2014-02 - Low-temperature (180°C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization
Toko Kaoru; Numata R.; Oya N.; Fukata N.; Usami N.; Suemasu T.
APPLIED PHYSICS LETTERS/104(3)/p.022106, 2014-01 - Electronic structures and magnetic moments of Co3FeN thin films grown by molecular beam epitaxy
Ito Keita; Sanai Tatsunori; Zhu Siyuan; Yasutomi Yoko; Toko K...
Applied Physics Letters/103(23), 2013-12 - Fabrication of BaSi2 films on Si(111)-oriented Si layers formed by inverted Al-induced crystallization method on glass structure
Numata Ryohei; Toko Kaoru; Usami Noritaka; Suemasu Takashi
Physica Status Solidi c/10(12)/pp.1769-1772, 2013-12 - Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates
Nakazawa K.; Toko Kaoru; Saitoh N.; Yoshizawa N.; Usami N.; Su...
Physica Status Solidi c/10(12)/pp.1781-1784, 2013-12 - Double-Layered Ge Thin Films on Insulators Formed by an Al-Induced Layer-Exchange Process
Toko Kaoru; Nakazawa Koki; Saitoh Noriyuki; Yoshizawa ...
CRYSTAL GROWTH & DESIGN/13(9)/pp.3908-3912, 2013-09 - Hard X-ray photoelectron spectroscopy study on valence band structure of semiconducting BaSi2
Baba Masakazu; Ito Keita; Du Weijie; Sanai Tatsunori; Okamoto...
Journal of Applied Physics/114(12), 2013-09 - Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy
Baba Masakazu; Tsurekawa Sadahiro; Watanabe Kentaro; Du W.; T...
Applied Physics Letters/103(14), 2013-09 - Large-grained polycrystalline (111) Ge films on insulators by thickness-controlled Al-induced crystallization
Nakazawa K.; Toko Kaoru; Saitoh N.; Yoshizawa N.; Usami N.; Su...
ESC Journal of Solid State Science and Technology/2(11)/pp.Q195-Q199, 2013-06 - Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates
Toko Kaoru; Fukata Naoki; Nakazawa Koki; Kurosawa Masashi; Us...
Journal of Crystal Growth/372/pp.189-192, 2013-06 - Orientation Control of Large-Grained Si Films on Insulators by Thickness-Modulated Al-Induced Crystallization
Numata Ryohei; Toko Kaoru; Saitoh Noriyuki; Yoshizawa Noriko...
Crystal Growth and Design/13(4)/pp.1767-1770, 2013-04 - Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)
Nakamura Kotaro; Toko Kaoru; Suemasu Takashi
J. Appl. Phys., 2013 - Hard X-ray photoelectron spectroscopy study on valence band structure of semiconducting BaSi2
Baba Masakazu; Toko Kaoru; Suemasu Takashi
J. Appl. Phys., 2013 - Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy
Baba Masakazu; Toko Kaoru; Suemasu Takashi
Appl. Phys. Lett./103, 2013 - Rotational and vibrational temperatures in a hydrogen discharge with a magnetic X-point
Tsankov Tsanko V.; Toko Kaoru; Czarnetzki Uwe
PHYSICS OF PLASMAS/19(12)/p.123503, 2012-12 - Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness
Okada Atsushi; Toko Kaoru; Hara Kosuke O.; Usami Noritak...
JOURNAL OF CRYSTAL GROWTH/356/pp.65-69, 2012-10 - more...
- Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111)