TOKO Kaoru

Researcher's full information

Articles
  • X-ray magnetic circular dichroism of ferromagnetic Co(4)N epitaxial films on SrTiO(3)(001) substrates grown by molecular beam epitaxy
    Ito Keita; Harada Kazunori; Toko Kaoru; Ye Mao; Kimura A...
    APPLIED PHYSICS LETTERS/99(25), 2011-12
    Tsukuba Repository
  • Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100),(110), and (111) Ge networks on insulators
    Mizushima Ichiro; Toko Kaoru; Miyao Masanobu
    Appl. Phys. Lett./98/p.182107, 2011
  • Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth
    Toko Kaoru
    Appl. Phys. Lett./99/p.032103, 2011-4
  • Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern
    Toko Kaoru
    Appl. Phys. Lett/98/p.042101, 2011-1
  • Defect-free Ge-on-insulator with (100), (110), and (111) orientations by direction-selected melting-growth
    Toko Kaoru
    Appl. Phys. Lett./97/p.152101, 2010
  • Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy
    Toko Kaoru
    Thin Solid Films, 2010
  • Liquid-Phase Epitaxial Growth of Ge Island on Insulator Using Ni-Imprint-Induced Si Crystal as Seed
    Toko Kaoru
    Thin Solid Films/518/p.182, 2010
  • High-Mobilities in Single-Crystal Ge Thin-Films Formed on Insulators by SiGe-Triggered Melting Growth
    Toko Kaoru
    Jpn. J. Appl. Phys./49, 2010
  • (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth
    Toko Kaoru
    Appl. Phys. Express/3/p.075603, 2010
  • High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth
    Miyao Masanobu; Toko Kaoru
    Appl. Phys. Lett./95/p.022115, 2009
  • Position-Controlled Growth of SiGe Crystals on Insulator by Indentation-Induced Solid-Phase Crystallization
    Toko Kaoru
    Jpn. J. Appl. Phys./48, 2009
  • Indentation-induced low-temperature solid-phase crystallization of Si1−xGex (x=0–1) on insulator
    Toko Kaoru
    Appl. Phys. Lett./94/p.192106, 2009
  • Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization
    Toko Kaoru
    Solid-State Electronics/53/p.1159, 2009
  • Defect-free single-crystal Ge islands on insulator by rapid-melting growth combined with seed-positioning
    Toko Kaoru
    Appl. Phys. Lett./97/p.112107, 2009
  • Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique
    Toko Kaoru
    Solid-State Electronics/52/p.1221, 2008
  • Ni-imprint induced solid phase crystallization in Si1-xGex (x: 0-1) on insulator
    Toko Kaoru
    Appl. Phys. Lett./91/p.042111, 2007
  • Temperature dependent metal-induced crystallization of amorphous SiGe on insulating substrate
    Kanno Hiroshi; Toko Kaoru; Miyao Masanobu
    Appl. Phys. Lett./89/p.182120, 2006