末益 崇(スエマス タカシ)
- 論文
- Potential variation around grain boundaries in BaSi2 films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy
Baba Masakazu; Hara Kosuke O.; Tsukahara Daichi; Toko ...
JOURNAL OF APPLIED PHYSICS/116(23), 2014-12 - Energetic stability and magnetic moment of tri-, tetra-, and octa- ferromagnetic element nitrides predicted by first-principle calculations
Imai Yoji; Sohma Mitsugu; Suemasu Takashi
JOURNAL OF ALLOYS AND COMPOUNDS/611/pp.440-445, 2014-10 - N-type doping of BaSi2 epitaxial films by arsenic ion implantation through a dose-dependent carrier generation mechanism
Hara Kosuke O.; Usami Noritaka; Baba Masakazu; Toko K...
THIN SOLID FILMS/567/pp.105-108, 2014-09 - Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy
Tsukahara D.; Baba M.; Honda S.; Imai Y.; Hara K. O.; Usami N....
JOURNAL OF APPLIED PHYSICS/116(12), 2014-09 - Sign of the spin-polarization in cobalt-iron nitride films determined by the anisotropic magnetoresistance effect
Ito Keita; Kabara Kazuki; Sanai Tatsunori; Toko Kaoru...
JOURNAL OF APPLIED PHYSICS/116(5), 2014-08 - Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique
Baba Masakazu; Watanabe Kentaro; Hara Kosuke O.; Toko ...
JAPANESE JOURNAL OF APPLIED PHYSICS/53(7), 2014-07 - Precipitation control and activation enhancement in boron-doped p(+)-BaSi2 films grown by molecular beam epitaxy
Khan M. Ajmal; Nakamura K.; Du W.; Toko K.; Usami N.; Suemasu T.
APPLIED PHYSICS LETTERS/104(25), 2014-06 - Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
Du Weijie; Baba Masakazu; Toko Kaoru; Hara Kosuke O.; Watanab...
Journal of Applied Physics/115(22)/p.223701, 2014-06 - Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization
Oya N.; Toko K.; Saitoh N.; Yoshizawa N.; Suemasu T.
APPLIED PHYSICS LETTERS/104(26), 2014-06 - Perpendicular magnetic anisotropy of Mn4N films on MgO(001) and SrTiO3(001) substrates
Yasutomi Yoko; Ito Keita; Sanai Tatsunori; Toko Kaoru; Suemas...
JOURNAL OF APPLIED PHYSICS/115(17), 2014-05 - Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111)
Ryota Takabe; Hara Kosuke O.; Baba Masakazu; Du Weijie; Shima...
JOURNAL OF APPLIED PHYSICS/115(19)/pp.193510-1-193510-8, 2014-05 - X-ray magnetic circular dichroism for CoxFe4-xN (x = 0, 3, 4) films grown by molecular beam epitaxy
Ito Keita; Sanai Tatsunori; Yasutomi Yoko; Zhu Siyuan; Toko K...
Journal of Applied Physics/115(17)/p.17C712, 2014-05 - Fabrication and Characterization of BaSi2 Epitaxial Films over 1 μm on Si(111)
Suemasu Takashi
Japanese Journal of Applied Physics, 2014-05 - Fabrication and characterization of BaSi2 epitaxial films over 1 mu m in thickness on Si(111)
Takabe Ryouta; Nakamura Kotaro; Baba Masakazu; Du Wei...
JAPANESE JOURNAL OF APPLIED PHYSICS/53(4:::SI), 2014-04 - 非晶質絶縁体上における大粒径Ge(111)薄膜のAl誘起低温成長(薄膜(Si,化合物,有機,フレキシブル)機能デバイス・材料・評価技術,バイオテクノロジー,及び一般)
都甲 薫; 末益 崇
電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス/114(1)/pp.27-29, 2014-04 - 絶縁膜上のAl誘起成長Ge層に与える基板効果とフレキシブル基板応用(薄膜(Si,化合物,有機,フレキシブル)機能デバイス・材料・評価技術,バイオテクノロジー,及び一般)
大谷 直生; 都甲 薫; 沼田 諒平; 中沢 宏紀; 宇佐美 徳隆; 末益 崇
電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス/114(1)/pp.31-32, 2014-04 - Si(111)基板上BaSi_2エピタキシャル膜の結晶・光学特性評価とガラス基板上への展開(薄膜(Si,化合物,有機,フレキシブル)機能デバイス・材料・評価技術,バイオテクノロジー,及び一般)
高部 涼太; 都甲 薫; 沼田 諒平; 原 康祐; 馬場 正和; DU Weijie; 宇佐美 徳隆; 末益 崇
電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス/114(1)/pp.35-37, 2014-04 - Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange
Numata Ryohei; Toko Kaoru; Usami Noritaka; Suemasu Takashi
Thin Solid Films/557/pp.147-150, 2014-04 - Structural Characterization of Polycrystalline Ge Thin Films on Insulators Formed by Diffusion-enhanced Al-Induced Layer Exchange
Numata Ryohei; Toko Kaoru; Oya Naoki; Usami Noritaka; Suem...
Japanese Journal of Applied Physics/53(4)/p.04EH03, 2014-04 - Self-organization of Ge(111)/Al/glass structures through layer exchange in metal-induced crystallization
Toko K.; Nakazawa K.; Saitoh N.; Yoshizawa N.; Suemasu T.
CRYSTENGCOMM/16(41)/pp.9590-9595, 2014 - Al-induced Crystallization of Amorphous-Ge Thin Films on Conducting Layer Coated Glass Substrates
Nakazawa Koki; Toko Kaoru; Usami Noritaka; Suemasu Takashi
Japanese Journal of Applied Physics/53(4)/p.04EH01, 2014-04 - N-Type Doping of BaSi2 Epitaxial Films by Phosphorus Ion Implantation and Thermal Annealing
Hara Kosuke O.; Hoshi Yusuke; Usami Noritaka; Shiraki Yasuhi...
Thin Solid Films/557/pp.90-93, 2014-04 - Diffusion Coefficients of Impurity Atoms in BaSi2 Epitaxial Films Grown by Molecular Beam Epitaxy
Zhang Ning; Nakamura Kotaro; Baba Masakazu; Toko Kaoru; Suema...
Japanese Journal of Applied Physics/53(4:::SI), 2014-04 - Orientation control of Ge thin films by underlayer-selected Al-induced crystallization
Toko Kaoru; Nakazawa K.; Saitoh N.; Yoshizawa N.; Usami N.; Su...
CrystEngComm/16(13)/pp.2578-2583, 2014-04 - Engineering of p-n junction for High Efficiency Semiconducting BaSi2 based Thin Film Solar Cells
Khan M. Ajmal; Hara K. O.; Du W.; Baba M.; Nakamura K.; Suzuno...
PROCEEDINGS OF 2014 11TH INTERNATIONAL BHURBAN CONFERENCE ON APPLIED SCIENCES & TECHNOLOGY (IBCAST)/pp.18-21, 2014 - さらに表示...
- Potential variation around grain boundaries in BaSi2 films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy