末益 崇(スエマス タカシ)
- 論文
- Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy
Y. Funase; M. Suzuno; K. Toko; K. O. Hara; N. Usami; N. Saito; ...
Journal of Crystal Growth/378/pp.365-367, 2013-09 - Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells
M. Ajmal Khan; K. O. Hara; K. Nakamura; M. Baba; K. Toh; M. Su...
Journal of Crystal Growth/378/pp.201-204, 2013-07 - Epitaxial growth of CoxFe4-xN thin films on SrTiO3(001) by molecular beam epitaxy and their magnetic properties
T. Sanai; K. Ito; K. Toko; and T. Suemasu; +末益 崇
Journal of Crystal Growth/378/pp.342-346, 2013-07 - Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates
Toko Kaoru; Fukata Naoki; Nakazawa Koki; Kurosawa Masashi; Us...
Journal of Crystal Growth/372/pp.189-192, 2013-06 - Large-grained polycrystalline (111) Ge films on insulators by thickness-controlled Al-induced crystallization
Nakazawa K.; Toko Kaoru; Saitoh N.; Yoshizawa N.; Usami N.; Su...
ESC Journal of Solid State Science and Technology/2(11)/pp.Q195-Q199, 2013-06 - Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation
Kosuke O. Hara; Yusuke Hoshi; Noritaka Usami; Yasuhiro Shira...
Thin Solid Films/534/pp.470-473, 2013-05 - Formation of polycrystalline BaSi2 films by radio-frequency magnetron sputtering for thin-film solar cell applications
T. Yoneyama; A. Okada; M. Suzuno; T. Shibutam; K. Matsumaru; N...
Thin Solid Films/534/pp.116-119, 2013-05 - Hard X-ray photoelectron spectroscopy study on valence band structure of semiconducting BaSi2
Baba Masakazu; Toko Kaoru; Suemasu Takashi
J. Appl. Phys., 2013 - Orientation Control of Large-Grained Si Films on Insulators by Thickness-Modulated Al-Induced Crystallization
Numata Ryohei; Toko Kaoru; Saitoh Noriyuki; Yoshizawa Noriko...
Crystal Growth and Design/13(4)/pp.1767-1770, 2013-04 - Enhanced p-type Conductivity and Band Gap Narrowing in Heavily B-doped p-BaSi2 Films Grown by Molecular Beam Epitaxy
Khan M. Ajmal; Hara K. O.; Du W.; Baba M.; Nakamura K.; Suzuno...
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)/pp.1357-1360, 2013 - Characterization of Grain Boundary Properties in BaSi2 Epitaxial Films on Si(111) and Si(001) by Kelvin Probe Force Microscopy
Baba Masakazu; Tsurekawa Sadahiro; Nakamura Kotaro; Du...
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)/pp.535-538, 2013 - Determination of bulk minority-carrier lifetime in BaSi2 films by utilizing a drastic enhancement of carrier lifetime by post-growth annealing
Hara O. kosuke; Toko Kaoru; Suemasu Takashi
Appl. Phys. Express/6/pp.112302-1-112302-4, 2013 - Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy
Baba Masakazu; Toko Kaoru; Suemasu Takashi
Appl. Phys. Lett./103, 2013 - Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)
Nakamura Kotaro; Toko Kaoru; Suemasu Takashi
J. Appl. Phys., 2013 - In-situ heavily p-type doping of over 10(20) cm(-3) in semiconducting BaSi2 thin films for solar cells applications
Khan M. Ajmal; Hara K. O.; Du W.; Baba M.; Nakamura K.; S...
APPLIED PHYSICS LETTERS/102(11), 2013-03 - Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)
Nakamura K.; Baba M.; Khan M. Ajmal; Du W.; Sasase M.; Ha...
JOURNAL OF APPLIED PHYSICS/113(5), 2013-02 - Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness
Okada Atsushi; Toko Kaoru; Hara Kosuke O.; Usami Noritak...
JOURNAL OF CRYSTAL GROWTH/356/pp.65-69, 2012-10 - Molecular beam epitaxy of CoxFe4-xN (0.4 < x < 2.9) thin films on SrTiO3(001) substrates
Sanai Tatsunori; Ito Keita; Toko Kaoru; Suemasu Takashi
JOURNAL OF CRYSTAL GROWTH/357/pp.53-57, 2012-10 - Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate
Hara Kosuke O.; Usami Noritaka; Toh Katsuaki; Toko K...
Jpn J Appl Phys/51(10)/pp.10NB06-10NB06-5, 2012-10 - Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy
M. Ajmal Khan; T. Saito; K. Nakamura; M. Baba; W. Du; K. ...
Thin Solid Films/522/p.95, 2012-10 - Investigation of the Recombination Mechanism of Excess Carriers in Undoped BaSi2 Films on Silicon
Kosuke O. Hara; Noritaka Usami; Katsuaki Toh; Masakazu B...
Journal of Applied Physics/111/p.83108, 2012-10 - Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4um on Si(111)
Baba Masakazu; Nakamura Kotaro; Du Weijie; Khan M. Ajmal; Koi...
Japanese Journal of Applied Physics/51(9)/p.098003, 2012-09 - Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
Toh Katsuaki; Hara Kosuke O.; Usami Noritaka; Saito Noriyuki...
JAPANESE JOURNAL OF APPLIED PHYSICS/51(9), 2012-09 - Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization
Toko K.; Kurosawa M.; Saitoh N.; Yoshizawa N.; Usami N.; Miyao...
APPLIED PHYSICS LETTERS/101(7)/p.072106, 2012-08 - Negative spin polarization at the Fermi level in Fe4N epitaxial films by spin-resolved photoelectron spectroscopy
Ito Keita; Okamoto Kazuaki; Harada Kazunori; Sanai Tatsu...
JOURNAL OF APPLIED PHYSICS/112(1), 2012-07 - さらに表示...
- Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy