末益 崇(スエマス タカシ)
- 論文
- Traveling Liquidus-Zone 法で成長するバルクInGaAsの単結晶化メカニズムの検討
金子 将士; 末益 崇; 木下 恭一; 依田 眞一; 小田原 修
JASMA : Journal of the Japan Society of Microgravity Application/25(4)/p.725, 2008-10 - Molecular beam epitaxy of semiconductor (BaSi2)metal (CoSi2) hybrid structures on Si(111) substrates for photovoltaic application
Ichikawa Y.; Kobayashi M.; Sasase M.; Suemasu T.
APPLIED SURFACE SCIENCE/254(23)/pp.7963-7967, 2008-09 - Fabrication and Current-Voltage Characteristics of Fe3Si/CaF2/Fe3Si Magnetic Tunnel Junction
Harianto Teddy; Sadakuni Kenji; Akinaga Hiro; Suemasu Ta...
JAPANESE JOURNAL OF APPLIED PHYSICS/47(8:Part 1)/pp.6310-6311, 2008-08 - Fabrication and Current–Voltage Characteristics of Fe3Si/CaF2/Fe3Si Magnetic Tunnel Junction
Harianto Teddy; Sadakuni Kenji; Akinaga Hiro; Suemasu Ta...
Jpn J Appl Phys/47(8)/pp.6310-6311, 2008-08 - Control of electron and hole concentrations in semiconducting silicide BaSi2 with impurities grown by molecular beam epitaxy
Kobayashi Michitaka.; Matsumoto Yuta; Ichikawa Yoshitake; Ts...
APPLIED PHYSICS EXPRESS/1(5)/pp.0-0, 2008-05 - Room-temperature 1.6 mu m electroluminescence from p(+)-Si/beta-FeSi2/n(+)-Si diodes on Si(001) without high-temperature annealing
Koizumi Tomoaki; Murase Shigemitsu; Suzuno Mitsushi; Suem...
APPLIED PHYSICS EXPRESS/1(5)/pp.0-0, 2008-05 - Lifetime and diffusion length of photogenerated minority carriers in single-crystalline n-type beta-FeSi2 bulk
Ootsuka Teruhisa; Suemasu Takashi; Chen Jun; Sekiguchi T...
APPLIED PHYSICS LETTERS/92(19)/pp.0-0, 2008-05 - Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(111) substrates by molecular beam epitaxy
Suemasu Takashi; Sasase Masato; Ichikawa Yoshitake; Kobay...
JOURNAL OF CRYSTAL GROWTH/310(6)/pp.1250-1255, 2008-03 - Improved Room-Temperature 1.6μm Electroluminescence from p-Si/β-FeSi_2/n-Si Double Heterostructures Light-Emitting Diodes
SUZUNO Mitsushi; MURASE Shigemitsu; KOIZUMI Tomoaki; SUEM...
Applied physics express/1(2)/pp.21403-1, 2008-02 - Improved room-temperature 1.6 mu m electroluminescence from p-Si/beta-FeSi2/n-Si double heterostructures light-emitting diodes
Suzuno Mitsushi; Murase Shigemitsu; Koizumi Tomoaki; Suem...
APPLIED PHYSICS EXPRESS/1(2)/pp.0-0, 2008-02 - Molecular beam epitaxy of semiconductor(BaSi2)/metal(CoSi2) hybrid structures on Si(111) substrates for photovoltaic applicati
Y. Ichikawa; M. Kobayashi; M. Sasase; T. Suemasu
Applied Surface Science/254/p.7963-7967, 2008-01 - Carrier lifetime and diffusion length of photo-generated minority carriers in n-type β-FeSi2 single crystals
T. Ootsuka; T. Suemasu; J. Chen; T. Sekiguchi; Y. Hara
Applied Physics Letters/92/p.192114, 2008-01 - Evaluation of minority-carrier diffusion length in n-type beta-FeSi2 single crystals by electron-beam-induced current
Ootsuka Teruhisa; Suemasu Takashi; Chen Jun; Sekiguchi T...
APPLIED PHYSICS LETTERS/92(4)/pp.0-0, 2008-01 - Growth of highly oriented crystalline alpha-Fe/AlN/Fe3N trilayer structures on Si(111) substrates by molecular beam epitaxy
Narahara Akari; Yamaguchi Kimiaki; Suemasu Takashi
JOURNAL OF CRYSTAL GROWTH/309(1)/pp.25-29, 2007-11 - Effect of using a high-purity Fe source on the transport properties of p-type beta-FeSi2 grown by molecular-beam epitaxy
Suzuno M.; Ugajin Y.; Murase S.; Suemasu T.; Uchikoshi M...
JOURNAL OF APPLIED PHYSICS/102(10)/pp.103706 (5 pages)-0, 2007-11 - Epitaxial growth and magnetic properties of Fe3Si/CaF2/Fe3Si tunnel junction structures on CaF2/Si(111)
Harianto Teddy; Kobayashi Ken'ichi; Suemasu Takashi; Akin...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/46(36-40)/pp.0-0, 2007-10 - Growth of nitride-based Fe3N/AIN/Fe4N magnetic tunnel junction structures on si(111) substrates
Narahara Akari; Suemasu Takashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/46(36-40)/pp.0-0, 2007-10 - Photoresponse properties of Al/n-beta-FeSi2 Schottky diodes using beta-FeSi2 single crystals
Ootsuka Teruhisa; Fudamoto Yasunori; Osamura Masato; Suem...
APPLIED PHYSICS LETTERS/91(14)/pp.0-0, 2007-10 - Si-Based Infrared Light Emitters Using Semiconducting Iron Disilicide
SUEMASU Takashi; MURASE Shigemitsu; UGAJIN Yuta; SUZUNO ...
Extended abstracts of the ... Conference on Solid State Devices and Materials/2007(0)/pp.54-55, 2007-09 - Epitaxial growth of Fe3Si/CaF2/Fe3Si magnetic tunnel junction structures on CaF2/Si(111) by molecular beam epitaxy
Kobayashi Ken'ichi; Suemasu Takashi; Kuwano Noriyuki; Har...
THIN SOLID FILMS/515(22)/pp.8254-8258, 2007-08 - Preparation of beta-FeSi2 substrates by molten salt method
Okubo M.; Ohishi T.; Mishina A.; Yamauchi I.; Udono H.; S...
THIN SOLID FILMS/515(22)/pp.8268-8271, 2007-08 - Effects of Sr addition on crystallinity and optical absorption edges in ternary semiconducting silicide Ba1-xSrxSi2
Morita Kousuke; Kobayashi Michitaka; Suemasu Takashi
THIN SOLID FILMS/515(22)/pp.8216-8218, 2007-08 - Photoluminescence decay time and electroluminescence of p-Si/beta-FeSi2 particles/n-Si and p-Si/beta-FeSi2 film/n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy
Suemasu T.; Ugajin Y.; Murase S.; Sunohara T.; Suzuno M.
JOURNAL OF APPLIED PHYSICS/101(12)/pp.124506 (6pages)-0, 2007-06 - Molecular beam epitaxy of band gap tunable ternary semiconducting silicides Ba1-xSrxSi2 for photovoltaic application
Suemasu T.; Morita K.; Kobayashi M.
JOURNAL OF CRYSTAL GROWTH/301/pp.680-683, 2007-04 - Epitaxial growth of ferromagnetic Fe3N films on Si(111) substrates by molecular beam epitaxy
Yamaguchi K.; Yui T.; Yamaki K.; Kakeya I.; Kadowaki K.; ...
JOURNAL OF CRYSTAL GROWTH/301/pp.597-601, 2007-04 - さらに表示...
- Traveling Liquidus-Zone 法で成長するバルクInGaAsの単結晶化メカニズムの検討