末益 崇(スエマス タカシ)

研究者情報全体を表示

論文

• Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy
  Morita K; Inomata Y; Suemasu T
  THIN SOLID FILMS/508(1-2)/pp.363-366, 2006-06
• Reactive ion etching of beta-FeSi2 with inductively coupled plasma
  Wakayama Takayuki; Suemasu Takashi; Kanazawa Tomomi; Akin...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/45(20-23)/pp.L569-L571, 2006-06
  
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• Band diagrams of BaSi2/Si structure by Kelvin probe and current-voltage characteristics
  Suemasu Takashi; Morita Kousuke; Kobayashi Michitaka; Sai...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/45(20-23)/pp.0-0, 2006-06
  
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• Annealing temperature dependence of EL properties of Si/beta-FeSi2/Si(111) double-heterostructures light-emitting diodes
  Ugajin Y; Takauji M; Suemasu T
  THIN SOLID FILMS/508(1-2)/pp.376-379, 2006-06
• Epitaxial growth of Fe3Si/CaF2/Si(111) hybrid structures by molecular beam epitaxy
  Kobayashi K; Sunohara T; Umada M; Yanagihara H; Kita E; S...
  THIN SOLID FILMS/508(1-2)/pp.78-81, 2006-06
• Epitaxial growth and characterization of Si-based light-emitting Si/beta-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy
  Sunohara T; Kobayashi K; Suemasu T
  THIN SOLID FILMS/508(1-2)/pp.371-375, 2006-06
• Temperature dependence of electro luminescence from Si-based light emitting diodes with beta-FeSi2 particles active region
  Li C; Suemasu T; Hasegawa F
  JOURNAL OF LUMINESCENCE/118(2)/pp.330-334, 2006-06
• Improvement of luminescence from beta-FeSi2 particles embedded in silicon, with high temperature silicon buffer layer
  Li C; Lai HK; Chen SY; Suemasu T; Hasegawa F
  JOURNAL OF CRYSTAL GROWTH/290(1)/pp.176-179, 2006-04
• Optical Absorption Edge of Ternary Semiconducting Silicide Ba_<1-x>Sr_xSi_2
  MORITA Kousuke; KOBAYASHI Michitaka; SUEMASU Takashi
  Japanese journal of applied physics. Pt. 2, Letters/45(12)/p.390, 2006-04
  
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• Optical absorption edge of ternary semiconducting silicide Ba1-xSrxSi2
  Morita K; Kobayashi M; Suemasu T
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/45(12-16)/pp.0-0, 2006-04
• Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C-SiC Intermediate Layers
  末益 崇
  Jpn.J.Appl.Phys./45(27)/p.L750-L707, 2006-01
• Band Diagrams of BaSi2/Si Structure by Kelvin Probe and Current-Voltage Characteristics
  末益 崇; Kousuke Morita; Michitaka Kobayashi; Morihiko Said...
  Jpn.J.Appl.Phys./45(20)/p.L519-L521, 2006-01
• Temperature dependence of electroluminescence from Si-based light emitting diodes with β-FeSi2 particles active
  末益 崇
  J.Lumine./118/p.330-334, 2006-01
• Horizontal growth of epitaxial (100) beta-FeSi2 templates by metal-organic chemical vapor deposition
  Akiyama K; Kaneko S; Hirabayashi Y; Suemasu T; Funakubo H
  JOURNAL OF CRYSTAL GROWTH/287(2)/pp.694-697, 2006-01
• Magneto-optical studies of ferromagnetic Cr-doped GaN films grown by molecular beam epitaxy
  Yamaguchi K; Tomioka H; Yui T; Suemasu T; Ando K; Yoshiza...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/44(9A:Part 1)/pp.6510-6512, 2005-09
• Epitaxial Growth of Ferromagnetic Fe_3Si Films on CaF_2/Si(111) by Molecular Beam Epitaxy
  SUNOHARA Tsuyoshi; KOBAYASHI Ken'ichi; UMADA Masakazu; YA...
  Japanese journal of applied physics. Pt. 2, Letters/44(20)/p.715, 2005-06
  
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• Growth and characterization of Si-based light-emitting diode with beta-FeSi2-particles/Si multilayered active region by molecular beam epitaxy
  Sunohara T; Li C; Ozawa Y; Suemasu T; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS/44(6A)/pp.3951-3953, 2005-06
  
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• Hole mobility of p-type beta-FeSi2 thin films grown from Si/Fe multilayers
  Takakura K; Ohyama H; Takarabe K; Suemasu T; Hasegawa F
  JOURNAL OF APPLIED PHYSICS/97(9)/pp.0-0, 2005-05
• Fabrication of p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diode by molecular beam epitaxy
  Takauji M; Li C; Suemasu T; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/44(4B)/pp.2483-2486, 2005-04
• Fabrication of p-Si/β-FeSi_2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy
  TAKAUJI Motoki; LI Cheng; SUEMASU Takashi; HASEGAWA Fumio
  Japanese journal of applied physics. Pt. 1, Regular papers & short notes/44(4)/pp.2483-2486, 2005-04
  
  CiNii
• CS-12-8 シリコンナノフォトニクスへの期待(CS-12. 次世代ナノ技術と情報通信, エレクトロニクス2)
  末益 崇
  電子情報通信学会総合大会講演論文集/2005(2)/p.63, 2005-03
  
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• Room-temperature electroluminescence of a Si-based p-i-n diode with beta-FeSi2 particles embedded in the intrinsic silicon
  Li C; Suemasu T; Hasegawa F
  JOURNAL OF APPLIED PHYSICS/97(4)/pp.0-0, 2005-02
• Cr concentration dependence of magnetic and electical properties of Cr-doped GaN films on Si(111) by MOMBE
  末益 崇
  phys. stat. sol. (c)/2(7)/p.2488-2491, 2005-01
• Epitaxial growth of ferromagnetic Fe3Si films on CaF2/Si(111) by molecular beam epitaxy
  Sunohara T; Kobayashi K; Umada M; Yanagihara H; Kita E; A...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/44(20-23)/pp.0-0, 2005-01
• シリサイド半導体の応用
  末益 崇
  機能材料/25(10)/p.54-60, 2005-01
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