末益 崇(スエマス タカシ)
- 論文
- 多元系シリサイドの新展開 : 半導体BaSi_2を例に
末益 崇; 今井 庸二
應用物理/76(3)/pp.264-268, 2007-03 - Reactive ion etching of β-FeSi2 film in inductively coupled plasma
T. Wakayama; T. Suemasu; T. Kanazawa; H. Akinaga
Thin Solid Films/515/p.8166-8168, 2007-01 - Epitaxial Growth and Magnetic Properties of Fe3Si/CaF2/Fe3Si Tunnel Junction Structures on CaF2/Si(111)
T. Harianto; K. Kobayashi; T. Suemasu; H. Akinaga
Japanese Journal of Applied Physics/46(37)/p.L904-L906, 2007-01 - Epitaxial growth an luminescence characterization of Si/β-FeSi2/Si double heterostructures light-emitting diodes
末益 崇
Proceedings of MRS 2006 Fall Meetings/958/p.L01-05, 2007-01 - Crystal Growth of β-FeSi2 on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates
末益 崇
Proceedings of MRS 2006 Fall Meetings/980/p.II05-47, 2007-01 - Growth of Nitride-Based Fe3N/AlN/Fe4N Mangetic Tunnel Junction Structures on Si(111) Substrates
A. Narahara; T.Suemasu; +末益 崇
Japanese Journal of Applied Physics/46(37)/p.L892-L894, 2007-01 - Epitaxial growth and magnetic properties of ferromagnetic Fe3N on Si(111) by molecular beam epitaxy using AlN/3C-SiC intermediate layers
Yamaguchi Kimiaki; Yui Tatsuya; Ichikawa Yoshitake; Yamak...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/45(24-28)/pp.L705-L707, 2006-07 - Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes
Li Cheng; Lai Hongkai; Chen Songyan; Suemasu T.; Hasegawa...
JOURNAL OF APPLIED PHYSICS/100(2)/pp.0-0, 2006-07 - Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy
Morita K; Inomata Y; Suemasu T
THIN SOLID FILMS/508(1-2)/pp.363-366, 2006-06 - Reactive ion etching of beta-FeSi2 with inductively coupled plasma
Wakayama Takayuki; Suemasu Takashi; Kanazawa Tomomi; Akin...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/45(20-23)/pp.L569-L571, 2006-06 - Band diagrams of BaSi2/Si structure by Kelvin probe and current-voltage characteristics
Suemasu Takashi; Morita Kousuke; Kobayashi Michitaka; Sai...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/45(20-23)/pp.0-0, 2006-06 - Annealing temperature dependence of EL properties of Si/beta-FeSi2/Si(111) double-heterostructures light-emitting diodes
Ugajin Y; Takauji M; Suemasu T
THIN SOLID FILMS/508(1-2)/pp.376-379, 2006-06 - Epitaxial growth of Fe3Si/CaF2/Si(111) hybrid structures by molecular beam epitaxy
Kobayashi K; Sunohara T; Umada M; Yanagihara H; Kita E; S...
THIN SOLID FILMS/508(1-2)/pp.78-81, 2006-06 - Epitaxial growth and characterization of Si-based light-emitting Si/beta-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy
Sunohara T; Kobayashi K; Suemasu T
THIN SOLID FILMS/508(1-2)/pp.371-375, 2006-06 - Temperature dependence of electro luminescence from Si-based light emitting diodes with beta-FeSi2 particles active region
Li C; Suemasu T; Hasegawa F
JOURNAL OF LUMINESCENCE/118(2)/pp.330-334, 2006-06 - Improvement of luminescence from beta-FeSi2 particles embedded in silicon, with high temperature silicon buffer layer
Li C; Lai HK; Chen SY; Suemasu T; Hasegawa F
JOURNAL OF CRYSTAL GROWTH/290(1)/pp.176-179, 2006-04 - Optical Absorption Edge of Ternary Semiconducting Silicide Ba_<1-x>Sr_xSi_2
MORITA Kousuke; KOBAYASHI Michitaka; SUEMASU Takashi
Japanese journal of applied physics. Pt. 2, Letters/45(12)/p.390, 2006-04 - Optical absorption edge of ternary semiconducting silicide Ba1-xSrxSi2
Morita K; Kobayashi M; Suemasu T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/45(12-16)/pp.0-0, 2006-04 - Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C-SiC Intermediate Layers
末益 崇
Jpn.J.Appl.Phys./45(27)/p.L750-L707, 2006-01 - Band Diagrams of BaSi2/Si Structure by Kelvin Probe and Current-Voltage Characteristics
末益 崇; Kousuke Morita; Michitaka Kobayashi; Morihiko Said...
Jpn.J.Appl.Phys./45(20)/p.L519-L521, 2006-01 - Temperature dependence of electroluminescence from Si-based light emitting diodes with β-FeSi2 particles active
末益 崇
J.Lumine./118/p.330-334, 2006-01 - Horizontal growth of epitaxial (100) beta-FeSi2 templates by metal-organic chemical vapor deposition
Akiyama K; Kaneko S; Hirabayashi Y; Suemasu T; Funakubo H
JOURNAL OF CRYSTAL GROWTH/287(2)/pp.694-697, 2006-01 - Magneto-optical studies of ferromagnetic Cr-doped GaN films grown by molecular beam epitaxy
Yamaguchi K; Tomioka H; Yui T; Suemasu T; Ando K; Yoshiza...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/44(9A:Part 1)/pp.6510-6512, 2005-09 - Epitaxial Growth of Ferromagnetic Fe_3Si Films on CaF_2/Si(111) by Molecular Beam Epitaxy
SUNOHARA Tsuyoshi; KOBAYASHI Ken'ichi; UMADA Masakazu; YA...
Japanese journal of applied physics. Pt. 2, Letters/44(20)/p.715, 2005-06 - Growth and characterization of Si-based light-emitting diode with beta-FeSi2-particles/Si multilayered active region by molecular beam epitaxy
Sunohara T; Li C; Ozawa Y; Suemasu T; Hasegawa F
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS/44(6A)/pp.3951-3953, 2005-06 - さらに表示...
- 多元系シリサイドの新展開 : 半導体BaSi_2を例に