末益 崇(スエマス タカシ)

研究者情報全体を表示

論文

• Hole mobility of p-type beta-FeSi2 thin films grown from Si/Fe multilayers
  Takakura K; Ohyama H; Takarabe K; Suemasu T; Hasegawa F
  JOURNAL OF APPLIED PHYSICS/97(9)/pp.0-0, 2005-05
• Fabrication of p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diode by molecular beam epitaxy
  Takauji M; Li C; Suemasu T; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/44(4B)/pp.2483-2486, 2005-04
• Fabrication of p-Si/β-FeSi_2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy
  TAKAUJI Motoki; LI Cheng; SUEMASU Takashi; HASEGAWA Fumio
  Japanese journal of applied physics. Pt. 1, Regular papers & short notes/44(4)/pp.2483-2486, 2005-04
  
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• CS-12-8 シリコンナノフォトニクスへの期待(CS-12. 次世代ナノ技術と情報通信, エレクトロニクス2)
  末益 崇
  電子情報通信学会総合大会講演論文集/2005(2)/p.63, 2005-03
  
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• Room-temperature electroluminescence of a Si-based p-i-n diode with beta-FeSi2 particles embedded in the intrinsic silicon
  Li C; Suemasu T; Hasegawa F
  JOURNAL OF APPLIED PHYSICS/97(4)/pp.0-0, 2005-02
• Cr concentration dependence of magnetic and electical properties of Cr-doped GaN films on Si(111) by MOMBE
  末益 崇
  phys. stat. sol. (c)/2(7)/p.2488-2491, 2005-01
• Epitaxial growth of ferromagnetic Fe3Si films on CaF2/Si(111) by molecular beam epitaxy
  Sunohara T; Kobayashi K; Umada M; Yanagihara H; Kita E; A...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/44(20-23)/pp.0-0, 2005-01
• シリサイド半導体の応用
  末益 崇
  機能材料/25(10)/p.54-60, 2005-01
• Thermal enhancement of 1.6 mu m electroluminescence from a Si-based light-emitting diode with beta-FeSi2 active region
  Li C; Ozawa Y; Suemasu T; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/43(11B)/pp.0-0, 2004-11
• Thermal Enhancement of 1.6μm Electroluminescence from a Si-Based Light-Emitting Diode with β-FeSi_2 Active Region
  LI Cheng; OZAWA Yoshinori; SUEMASU Takashi; HASEGAWA Fumio
  Japanese journal of applied physics. Pt. 2, Letters/43(11)/pp.L1492-L1494, 2004-11
  
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• Disagreement between magnetic and magneto-optical properties in Cr-doped GaN films on Si(III) substrates grown by metal organic molecular beam epitaxy
  Yamaguchi K; Tomioka H; Yui T; Suemasu T; Ando K; Yoshiza...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/43(10A)/pp.L1312-L1314, 2004-10
  
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• Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
  SUNOHARA Tsuyoshi; LI Cheng; OZAWA Yoshinori; SUEMASU Ta...
  Extended abstracts of the ... Conference on Solid State Devices and Materials/2004(0)/pp.822-823, 2004-09
  
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• Growth of Si/beta-FeSi2/Si double-heterostructures on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements
  Takauji M; Seki N; Suemasu T; Hasegawa F; Ichida M
  JOURNAL OF APPLIED PHYSICS/96(5)/pp.2561-2565, 2004-09
• Fabrication of p-Si/β-FeSi_2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy
  TAKAUJI Motoki; LI Cheng; SUEMASU Takashi; HASEGAWA Fumio
  Extended abstracts of the ... Conference on Solid State Devices and Materials/2004(0)/pp.820-821, 2004-09
  
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• Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN
  Suzuki M; Sato T; Suemasu T; Hasegawa F
  PHYSICA STATUS SOLIDI A-APPLIED RESEARCH/201(12)/pp.2782-2785, 2004-09
• Reflection and absorption spectra of beta-FeSi2 under pressure
  Mori Y; Sumida Y; Takarabe K; Suemasu T; Hasegawa F; Udono H; K...
  THIN SOLID FILMS/461(1)/pp.171-173, 2004-08
• Epitaxial growth of semiconducting beta-FeSi2 and its application to light-emitting diodes
  Suemasu T; Takakura K; Li C; Ozawa Y; Kumagai Y; Hasegawa F
  THIN SOLID FILMS/461(1)/pp.209-218, 2004-08
• Time-resolved photoluminescence study of Si/beta-FeSi2/Si structures grown by molecular beam epitaxy
  Suemasu T; Takauji M; Li C; Ozawa Y; Ichida M; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/43(7A)/pp.0-0, 2004-07
• Epitaxial growth of semiconducting BaSi2 thin films on Si(111) substrates by reactive deposition epitaxy
  Inomata Y; Nakamura T; Suemasu T; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS/43(7A)/pp.4155-4156, 2004-07
  
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• Molecular beam epitaxy of highly [100]-oriented beta-FeSi2 films on lattice-matched strained-Si(001) surface using Si0.7Ge0.3 layers
  Saito T; Suemasu T; Yamaguchi K; Mizushima K; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/43(7B)/pp.L957-L959, 2004-07
  
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• Epitaxial growth of Si-based ternary alloy semiconductor Ba1-xSrxSi2 films on Si(III) substrates by molecular beam epitaxy
  Inomata Y; Suemasu T; Izawa T; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/43(6B)/pp.0-0, 2004-06
  
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• 第51回応用物理学関係連合講演会(2004年)
  八井 浄; 進藤 春雄; 田村 收; 伊藤 雅英; 馬場 俊彦; 勝山 俊夫; 藤田 安彦; 小笠原 宗博; 三木...
  應用物理/73(6)/pp.788-826, 2004-06
  
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• Influence of beta-FeSi2 particle size and Si growth rate on 1.5 mu m photoluminescence from Si/beta-FeSi2-particles/Si structures grown by molecular-beam epitaxy
  Ozawa Y; Ohtsuka T; Li C; Suemasu T; Hasegawa F
  JOURNAL OF APPLIED PHYSICS/95(10)/pp.5483-5486, 2004-05
• Epitaxial growth of semiconducting BaSi2 films on Si(III) substrates by molecular beam epitaxy
  Inomata Y; Nakamura T; Suemasu T; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/43(4A)/pp.0-0, 2004-04
  
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• Growth of epitaxial beta-FeSi2 thin film on Si(001) by metal-organic chemical vapor deposition
  Akiyama K; Kimura T; Suemasu T; Hasegawa F; Maeda Y; Funa...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/43(4B)/pp.0-0, 2004-04
  
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