末益 崇(スエマス タカシ)

研究者情報全体を表示

論文
  • 環境にやさしい直接遷移型半導体β-FeSi2の研究の現状と将来展望
    末益 崇
    応用物理/39(7)/p.804-816, 2000-01
  • Control of the conduction Type of Nondoped High Mobility β-FeSi2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
    末益 崇
    Japanese Journal of Applied Physics/39(8A)/p.L789-L781, 2000-01
  • Growth of Mn-Doped β-FeSi2 Films on Si(001) by Reactive Deposition Epitaxy
    末益 崇
    Thin Solid Films/369(1-2)/p.253-256, 2000-01
  • Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
    Suemasu Takashi; Hiroi Noriyoshi; Fujii Tetsuo; Takakura ...
    Japanese journal of applied physics. Pt. 2, Letters/38(8)/pp.L878-L881, 1999-08
    CiNii
  • Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000℃ with Halide Vapor Phase Epitaxy
    HASEGAWA Fumio; MINAMI Masato; SUNABA Kenji; SUEMASU Tak...
    Japanese journal of applied physics. Pt. 2, Letters/38(7)/pp.L700-L702, 1999-07
    CiNii
  • Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
    SUEMASU Takashi; IIKURA Yusuke; FUJII Tetsuo; TAKAKURA K...
    Japanese journal of applied physics. Pt. 2, Letters/38(6)/pp.L620-L622, 1999-06
    CiNii
  • Growth of Continuous and Highly (100)-oriented β-FeSi2 Films on Si(001)from Si/Fe Multilayers with SiO2 Capping and Templates(共著)
    末益 崇
    Japanese Journal of Applied Physics/38/p.L878-L880, 1999-01
  • Fabrication of p-Si/β-FeSi2 balls/n-Si structures by MBE and their electrical and optical properties(共著)
    末益 崇
    Journal of Luminescence/80/p.473-477, 1999-01
  • Thick GaN Growth on GaAs(111) Substrates at 1000℃ with HVPE
    末益 崇
    Phys. Stat. sol. (a)/176/p.421-424, 1999-01
  • Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
    SUEMASU Takashi; FUJII Tetsuo; IIKURA Yuusuke; TAKAKURA ...
    Japanese journal of applied physics. Pt. 2, Letters/37(12)/pp.L1513-L1516, 1998-12
    CiNii
  • Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
    TSUCHIYA Harutoshi; SUNABA Kenji; MINAMI Masato; SUEMASU ...
    Japanese journal of applied physics. Pt. 2, Letters/37(5)/pp.L568-L570, 1998-05
    CiNii
  • RDE法によるSi/β-FeSi_2/Si(001)構造の作製(<小特集>ヘテロエピタキシーと界面構造制御)
    末益 崇; 長谷川 文夫
    日本結晶成長学会誌/25(1)/pp.46-54, 1998-03
    CiNii
  • Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
    SUEMASU Takashi; TAKAKURA Ken'ichiro; TANAKA Masaya; FUJI...
    Japanese journal of applied physics. Pt. 2, Letters/37(3)/pp.L333-L335, 1998-03
    CiNii
  • Dependence of GaN MOMBE growth on nitrogen source : plasma gun structure and monomethylhyclrazine(共著)
    末益 崇
    Journal of Crystal Growth/189-190/p.380-384, 1998-01
  • Si(001)基板上にRDE法により成長した単結晶β-FeSi2層の磁気輸送特性
    末益 崇
    Jpn. J. Appl. Phys./37/p.L333-L335, 1998-01
  • Growth condition dependence of GaN crystal structures on (001) GaAs by hyride vapor phase epitaxy(共著)
    末益 崇
    Journal of Crystal Growth/189-190/p.395-400, 1998-01
  • RDE法によるSi/β-FeSi2/Si構造の作製
    末益 崇
    日本結晶成長学会誌(解説)/25(1)/p.46-54, 1998-01
  • モノメチルヒドラジンとECRプラズマ励起窒素を用いた場合のGaN CBE成長の比較(共著)
    末益 崇
    J. Cryst. Growth/188/p.81-85, 1998-01
  • Photoluminescence from Reactive Deposition Epitaxy Grown β-FeSi2 Balls Embedded in Si Crystals(共著)
    末益 崇
    Japanese Journal of Applied Physics/37/p.L1513-L1516, 1998-01
  • ハライド気相成長法による厚膜立方晶GaN成長におけるGaAs基板からのAsのオートドーピングの影響(共著)
    末益 崇
    Jpn. J. Appl. Phys./37/p.L568-L570, 1998-01
  • Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
    SUEMASU Takashi; YAMAMOTO Masaki; TAKAKURA Ken'ichiro; HA...
    Japanese journal of applied physics. Pt. 1, Regular papers & short notes/36(12)/pp.7146-7151, 1997-12
    CiNii
  • 5p-YK-5 Fe-Si系化合物の作製と評価(III)
    掛本 博文; 樋口 透; 桜木 史朗; 牧田 雄之助; 小原 明; 小林 直人; 辛 埴; 末益 崇; 長谷川 ...
    日本物理学会講演概要集/52(2)/p.433, 1997-09
    CiNii
  • Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
    SUEMASU Takashi; TANAKA Masaya; FUJII Tetsuo; HASHIMOTO ...
    Japanese journal of applied physics. Pt. 2, Letters/36(9)/pp.L1225-L1228, 1997-09
    CiNii
  • X線測定による六方晶/立方晶GaN混合比の推定とHVPE GaN/GaAsの評価
    土屋 晴稔; 砂場 健児; 米村 正吾; 末益 崇; 長谷川 文夫
    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス/97(100)/pp.43-48, 1997-06
    CiNii
  • Si(001)基板上β-FeSi2層の形成
    末益 崇
    Jpn. J. Appl. Phys./36(6A)/p.3620-3624, 1997-01
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