櫻井 岳暁(サクライ タケアキ)
- 論文
- Cyanide Treatment for Polycrystalline Cu2O/ZnO Heterojunction Thin Films Grown by RF Magnetron Sputtering
H.Sato; Y.Nawa; G.K.Paul; M.Islam; T.Sakurai; K.Matsubara; S.Ni...
Technical Digest of the 15th International Photovoltaic Science and Engineering Conference (PVSEC-15)/p.839-840, 2005-01 - Influence of lattice-matching on structural properties of GaInNAs epitaxial films grown on GaAs,
T. Sakurai; N. Matsumoto; Y. Okada; S. Onari; and K. Akimoto; ...
physica status solidi (c)/2/p.2224-2227, 2005-01 - Polycrystalline n-ZnO/p-Cu2O heterojunctions grown by RF-magnetron sputtering
S. Ishizuka; K. Suzuki; Y. Okamoto; M. Yanagida; T. Saku...
phys. stat. sol. (c)/1/p.1067-1070, 2004-01 - Passivation of defects in polycrystalline Cu20 thin films by hydrogen or cyanide treatment,
S. Ishizuka; S. Kato; Y. Okamoto; T. Sakurai; K. Akimoto...
Applied Surface Science/216/p.94-97, 2003-01 - Passivation of defects in nitrogen-doped polycrystalline Cu20 thin films by crown-ether cyanide treatment,
Y. Okamoto; S. Ishizuka; S. Kato; T. Sakurai; N. Fujiwar...
Applied Physics Letters/82/p.1060-1062, 2003-01 - Interface states at SiO2/6H-SiC(0001) interfaces observed by x-ray photoelectron spectroscopy measurements under bias: Comparison between dry and wet oxidation
H.Kobayashi; T.Sakurai; M.Takahashi; Y.Nishioka; +櫻井 岳暁
Physical Review B/67/p.115305, 2003-01 - Low interface state density of SiC-based metal-oxide-semiconductor structure formed with perchloric acid at 203ﾟC
T.Sakurai; M.Nishiyama; Y.Nishioka; H.Kobayashi; +櫻井 岳暁
Applied Physics Letters/81/p.271-273, 2002-01 - SiC/SiO2 structure formed at similar to 200ﾟC by heat treatment at 950℃ having excellent electrical characteristics
T.Sakurai; JW.Park; Y.Nishioka; M.Nishiyama; H.Kobayashi; +櫻井 岳暁
Jpn. J. Appl. Phys./41/p.2516-2518, 2002-01 - SiC/SiO2 interface states observed by x-ray photoelectron spectroscopy measurements under bias
T.Sakurai; EA de Vasconcelos; T.Katsube; Y.Nishioka; H.Kobay...
Applied Physics Letters/78/p.96-98, 2001-01 - Formation of a SiO2/SiC structure at 203ﾟC by use of perchloric acid
H.Kobayashi; T.Sakurai; M.Nishiyama; Y.Nishioka; +櫻井 岳暁
Applied Physics Letters/78/p.2336-2338, 2001-01 - Electrical properties of the silicon oxide/Si structure formed with perchloric acid 203ﾟC
T.Sakurai; M.Nishiyama; Y.Nishioka; H.Kobayashi; +櫻井 岳暁
Solid State Communications/118/p.391-394, 2001-01 - Electronic Property on Thin Single-Crystal Films of α-Al2O3 on Ru (0001)
Y.Murata; K.Nagata; H.Fujimoto; T.Sakurai; M.Okada; and Y.Ebe...
Journal of the Physical Society of Japan/70/p.793-796, 2001-01
- Cyanide Treatment for Polycrystalline Cu2O/ZnO Heterojunction Thin Films Grown by RF Magnetron Sputtering