村上 浩一(ムラカミ コウイチ)
- 論文
- Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon
K. Murakami; H. Kuribayashi; K. Masuda
Materials Science Forum/38-41/p.385-389, 1989 - イオン注入及びレ－ザ－・アニ－ルでド－プしたＳｉ中ｏｆｆ－ｃｅｎｔｅｒ 置換位置Ｎ
村上浩一; 栗林均; 原和里; 升田公三
放射線/16/p.126-130, 1989 - Motional Effects and Optical Pumping Effects of Off-center Substitutional Nitrogen in Silicon
K. Murakami; H. Kuribayashi; K. Hara; K. Masuda
Proc. Intern. Conf. on Science and Technology of Defects Control in Semiconductors (North-Holland, 1990)/p.49-52, 1990 - 半導体研究へのレ－ザ－プラズマＸ線の応用
村上浩一
レ－ザ－研究/18/p.959-963, 1990 - レ－ザ－アブレ－ション法による超伝導膜の作成
村上浩一; 升田公三
ニュ－セラミック/3/p.49-52, 1990 - Ion Implantation Effect in High Tc Oxide Y1 Ba2 Cu3 O y
K. Masuda; O. Eryu; K. Murakami; K. Takita
Nuclear Instruments and Methods in Physics Research/B46/p.284-286, 1990 - Time-Resolved X-Ray Absorption Spectroscopy Apparatus using Laser Plasma as an X-Ray Source
O. Yoda; A. Miyashita; K. Murakami; S. Aoki; N. Yamaguchi
Proc. SPIE vol.1503 Excimer Lasersand Applications III (Society of Photo- Optical Instru.Eng., 1991)/p.463-466, 1991 - Novel Methods of Laser Ablation of Y1 Ba2 Cu3 O y
O. Eryu; K. Yamaoka; ; K. Murakami; K. Masuda
Extented Abstracts of 1991 Intern. Conf. on Solid State Devices and Materials/p.438-440, 1991 - 半導体中不純物の準安定性/双安定性
村上浩一
日本物理学会誌/46/p.475－478, 1991 - Hydrogen States Probed by Electron-Spin Resonance of Phosphorus Donors in Silicon
K. Murakami; H. Suhara; S. Fujita; K. Masuda
Phys. Rev. B/44/p.3409-3412, 1991 - Strong Dependence of Hydrogen Passivation on Donor Concentration and on Donor Depth Profile in Silicon
K. Murakami; S. Fujita; K. Masuda
Jpn. J. Appl. Phys./30/p.L1566-1568, 1991 - 第２レ－ザ－照射によるアブレ－ション粒子励起効果
江龍修; 千葉; 村上浩一; 升田公三
レ－ザ－研究/19/p.254-260, 1991 - Dynamic Behavior of Fragments Ejected from the Surface of Carbon Materials by Laser Ablation
O. Yoda; A. Miyashita; T. Ohyanagi; K. Murakami
JAERI/92-173/p.1-27, 1992 - Dynamics of Laser Ablation of High Tc Superconductors and Semiconductors, and a New Method for Growth of Films
K. Murakam
European Materials Research Society Monographs, Invited/4/p.125-140, 1992 - Time-Resolved Soft X-Ray Absorption Spectroscopy Apparatus Using Laser Produced Plasma X-Ray
A. Miyashita; O. Yoda; K. Murakami; T. Ohyanagi; S. Aoki...
Proc. on Laser Advanced Materials Processing/p.1029-1034, 1992 - Strong Wavelength Dependence of Laser Ablation Fragments of SuperconductorY1 Ba2 Cu3 O y
O. Eryu; K. Murakami; K. Masuda; K. Shihoyama; T. Mochizuki
Jpn. J. Appl. Phys./31/p.L86-88, 1992 - Nuclear Spin Polarization by Optical Pumping of Nitrogen Impurities in Semiconductors
K. Murakami; K. Hara; K. Masuda
Materials Science Forum/83-87/p.1141-1146, 1992 - Electron Spin Resonance on Hydrogen Passivation of Donors in Silicon
K. Murakami; S. Fujita; K. Masuda
Materials Science Forum/83-87/p.75-80, 1992 - アモルファスＧａＡｓのレ－ザ－固相エピタキシャル成長
南海玉; 村上浩一; 升田公三
レ－ザ－研究/20/p.948-954, 1992 - ”非平衡ド－ピングと半導体中不純物の準安定性
村上浩一
固体物理 （電子励起による非平衡固体ダイナミックス）特集号/p.117-122, 1993 - Dynamics and Control of Laser Ablation of Oxide Superconductors and Semicoductors
K.Murakami
Proc. Intern. Workshop on Dynamic Response to Pulsed Heating (invited, Los Alamos)/p.45-56, 1993 - Laser Solid-Phase-Epitaxy of Amorphous Si1-x Gex Layer on Si
Y. Sogo; K. Murakami; K. Masuda
Proc. MRS Symp./279/p.731-736, 1993 - Laser Solid-Phase-Epitaxy of Amorphous Si1-XGex Layer on Si
村上 浩一
Proc, MRS Symp./(279)/p.731-736, 1993 - Shallow Donor States in InP : Electron-Spin-Resonance Induced Overhauser Shift
K. Murakami; T. Ohyanagi; K. Hara; K. Masuda
Mateials Science Forum/117-118/p.369-374, 1993 - A Laboratory Scale Apparatus for the Time-Resolved X-Ray Absorption Spectroscopy Using Laser Plasma as an X-Ray Source
O. Yoda; A. Miyashita; K. Murakami; T. Ohyanagi; S. Aoki...
Jpn. J. Appl. Phys./32(Suppl.32-2)/p.255-257, 1993 - さらに表示...
- Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon