村上 浩一(ムラカミ コウイチ)
- 論文
- Effect of Ion Dose Rate on Rapid Laser Annealing of Ion Implanted GaAs
K. Masuda; K. Murakami; H.Y. Nan
J. Elect. Mat./25/p.3-5, 1996 - Formation of Hydrogen Molecules in Crystalline Silicon Treated with Atomic Hydrogen
K. Murakami; N. Fukata; S. Sasaki; K. Ishidoka; K.G. Nak...
Mat. Res. Soc. Symp. Proc/442/p.269-274, 1997 - Nano-Structured Silicon-Based Films with Visible Light Emission Synthesized by Laser Ablation
T. Makimura; Y. Kunii; N. Ono; K. Murakami
Mat. Res. Soc. Symp. Proc./452/p.135, 1997 - Hydrogen Molecules in Silicon Crystal
K.G. Nakamura; K. Ishioka; M. Kitajima; and K. Murakami; ...
Mat. Res. Soc. Symp. Proc./469/p.229-232, 1997 - Hydrogen Molecules in Crystalline Silicon (Invited Paper)
M. Kitajima; K. Ishioka; K.G. Nakamura; N. Fukata; K. Mu...
Proc. 19th ICDS(Aveiro, July, 1997), Materials Science Forum/258-263/p.203-210, 1997 - Thermal Stability of Hydrogen Molecules in Crystalline Silicon
N. Fukata; K. Murakami; K. Ishioka; K.G. Nakamura; M. Ki...
Materials Science Forum/258-263/p.211-215, 1997 - Trapping Site of Hydrogen Molecule in Crystalline Silicon
K. Ishioka; K.G. Nakamura; M. Kitajima; N. Fukata; K. Mu...
Materials Science Forum/258-263/p.235-240, 1997 - 水素原子処理シリコン結晶中の水素分子
深田直樹; 佐々木慎一; 村上浩一; 石岡邦江; 中村一隆; 北島正弘; 菊地純; 藤村修三; 羽田肇
表面科学/18/p.495-500, 1997 - "Ab initio Calculation of Hydrogen Molecules in Silicon"
K.G. Nakamura; K. Ishidoka; M. Kitajima; and K. Murakami...
Solid State Comm./101/p.735-738, 1997 - Raman Spectroscopic Study on Hydrogen Molecules in Crystalline Silicon Treated with Atomic Hydrogen
K. Ishioka; K.G. Nakamura; M. Kitajima; N. Fukata; S. Sa...
Appl. Surf. Sci./117,118/p.118/,37-41, 1997 - Hydrogen Molecules and Hydrogen-related Defects in Crystalline Sillicon
N. Fukata; S. Sasaki; K. Murakami; K. Ishioka; K.G. Naka...
Phys. Rev./B56/p.6642-6647, 1997 - 4f-shell Configuration of Yb in InP studied by Electron Spin resonance
T. Ishiyama; K. Murakami; K. Takahei; and A. Taguchi
J. Appl. Phys./82/p.4457-4460, 1997 - Hydrogen Molecules in Defective Silicon
N. Fukata; S. Sasaki; K. Murakami; K. Ishioka; K.G. Naka...
Jpn. J. Appl. Phys/36/p.L1456-1459, 1997 - Electron Spin Resonance of Er-Oxygen Complexes in GaAs
T. Ishiyama; E. Katayama; K. Takahei; A. Taguchi; K. Mur...
Materials Science Forum/258-263/p.1159-1564, 1997 - 結晶シリコン中の水素分子と水素複合体中心
村上浩一
固体物理/33/p.735-745, 1998 - 可視発光シリコンナノ微粒子
村上浩一; 牧村哲也
応用物理/67/p.817-821, 1998 - Dynamics of Si Plume produced by Laser Ablation in Ambient Inert Gas and Formation of Si Nanoclusters
K. Murakami; T. Makimura; N. Ono; T. Sakuramoto; A. Miya...
Appl. Surface Science/127-129/p.368-372, 1998 - Silicon Nanoparticles embedded in SiO2 Films with Visible Photoluminescence
T. Makimura; Y. Kunii; N. Ono; and K. Murakami; +村上 浩一
Appl. Surface Science/127-129/p.388-392, 1998 - Electron Spin Resonance of Er-Oxygen Complexes in GaAs grown by metal organic chemical vapor deposition
T. Ishiyama; E. Katayama; K. Takahei; A. Taguchi; K. Mur...
J. Appl Phys./84/p.6782-6787, 1998 - Formation Process of Si Nanoparticles Formed by Laser Ablation Method
T. Makimura; T. Mizuta; T. Ueda; and K. Murakam; +村上 浩一
Mat. Res. Soc. Symp. Proc./536/p.51-56, 1999 - Crystallinities and light-emitting properties of nanostructured SiGe alloy prepared by pulsed laser ablation in inert background gases
Takehito Yoshida; Yuka Yamada; Nobuyasu Suzuki; and Tosh...
Proc. SPIE/3618/p.512, 1999 - Synthesis of Si Nanoparticles with Visible Photoluminescence and Dynamics of Laser Ablation
K.Murakami; +村上 浩一
PCPM '99(International Symposium on Photoreaction Control and Photofunctional Materials, Tsukuba, 1999) invited/p.47-50, 1999 - レーザープラズマ軟X線吸収分光を用いたアブレーション粒子の時間分解測定
宮下敦巳; 依田修; 村上浩一
表面科学/20/p.180-185, 1999 - Effects of Crystal Disorder on the Molecular Hydrogen Formation in Silicon
M. Kitajima; K. Ishioka; S. Tateishi; K. Nakanoya; N. Fu...
Mater. Sci. and Eng./B58/p.13-16, 1999 - Three Different Forms of Hydrogen Molecules in Silicon
M. Kitajima; K. Ishioka; K. Nakanoya; S. Tateishi; T. Mo...
Jpn. J. Appl. Phys./38/p.691-693, 1999 - さらに表示...
- Effect of Ion Dose Rate on Rapid Laser Annealing of Ion Implanted GaAs