都倉 康弘(トクラ ヤスヒロ)
- 論文
- Dirac Cone Migration -Decay and Frequency Shift of Inter and Intravalley Phonons in Graphene-
Ken-ichi Sasaki; Keiko Kato; Yasuhiro Tokura; Satoru Suz...
Phys. Rev. B/86/p.201403, 2012-11 - Partial decoherence in mesoscopic system
Amnon Aharony; Shmuel Gurvitz; Yasuhiro Tokura; Ora Enti...
Physica Scripta/p.14018, 2012-12 - The photon-assisted dynamic nuclear polarization effect in a double quantum dot
Toshiaki Obata; Michel Pioro-Ladriere; Yasuhiro Tokura; S...
New Journal of Physiscs/14/p.123013, 2012-12 - Phonon Cavity Quantum Electrodynamics and Phonon Microlaser
Yasuhiro Tokura
PSJ Online, 2013 - Ultrathin MgB2 films fabricated by molecular beam epitaxy and rapid annealing
Hiroyuki Shibata; Tatsushi Akazaki; Yasuhiro Tokura
Supercond.Sci. Technol./26/p.35005, 2013 - The origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene
Ken-ichi Sasaki; Yasuhiro Tokura; and Tetsuomi Sogawa
Crystals/3/p.120, 2013 - Fabrication of MgB2 nanowire single-photon detector with meander structure
Hiroyuki Shibata; Tatsushi Akazaki; Yasuhiro Tokura
APEX/6/p.23101, 2013 - Slow light enhanced correlated photon pair generation in photonic-crystal coupled-resonator optical waveguides
Nobuyuki Matsuda; Hiroki Takesue; Kaoru Shimizu; Yasuhiro...
Optics Express/21(7)/pp.8596-8604, 2013-04 - 電場による単電子スピンの制御
都倉 康弘
固体物理/44(1)/pp.17-23, 2009-01 - Conductivity oscillation due to quantum interference in a proposed wash-board transistor
Tokura Y.; Tsubaki K.
Applied Physics Letters/51(22)/p.1807-1808, 1987-01 - Coherence length in quantum interference devices having periodic potential
Tsubaki K.; Tokura Y. (Ed.)Sugano T.; Chang R.P.H.; Kam...
Proceedings of the First International Conference on Electronic Materials. New Materials and New Physical Phenomena for Electronics of the 21st Century (ICEM '88), 1988-01 - Superlattice structure observation for (AlAs)/sub 1/2/(GaAs)/sub 1/2/ grown on (001) vicinal GaAs substrates
Fukui T.; Saito H.; Tokura Y.
Japanese Journal of Applied Physics, Part 2/27(7)/p.1320-1322, 1988-01 - Terrace width ordering mechanism during epitaxial growth on a slightly tilted substrate
Tokura Y.; Saito H.; Fukui T.
Journal of Crystal Growth/94(1)/p.46-52, 1989-01 - Electron wave interference device with vertical superlattices working in large current region
Tsubaki K.; Tokura Y.; Fukui T.; Saito H.; Susa N.
Electronics Letters/25(11)/p.728-730, 1989-01 - New field-effect transistor with quantum wire and modulation- doped heterostructures
Tsubaki K.; Fukui T.; Tokura Y.; Saito H.; Susa N.
Electronics Letters/24(20)/p.1267-1269, 1989-01 - Coherence length in quantum interference devices having periodic potential
Tsubaki K.; Tokura Y.
Applied Physics Letters/53(10)/p.859-861, 1989-01 - Electronic states in an AlGaAs-GaAs modulation-doped hetero- interface with a 10 nm-order periodic structure
Tokura Y.; Tsubaki K.; Susa N.
Surface Science/228(1-3)/p.280-282, 1990-01 - Electronic state of AlAs/GaAs vertical superlattice in modulation doped structure
Tsubaki K.; Tokura Y.; Susa N. (Ed.) Ikoma T.; Watanabe...
Gallium Arsenide and Related Compounds 1989. Proceedings of the Sixteenth International Symposium/p.869-874, 1990-01 - (AlAs)/sub 1/2/(GaAs)/sub 1/2/ fractional-layer superlattices grown on (001) vicinal GaAs substrates by MOCVD
Fukui T.; Saito H.; Tokura Y.; Tsubaki K.; Susa N.
Surface Science/228(1-3)/p.20-23, 1990-01 - Electron effective-mass modulation transistor
Tokura Y.; Susa N.
Journal of Applied Phyisics/67(4)/p.2171-2172, 1990-01 - Electronic states in lateral structures on modulation-doped heterointerfaces
Tokura Y.; Tsubaki K.; Susa N.
Applied Physics Letters/55(14)/p.1403-1405, 1990-01 - Mobility modulation on a modulation-doped structure with an AlAs/GaAs fractional layer superlattice
Tsubaki K.; Tokura Y.; Susa N.
Applied Physics Letters/57(8)/p.804-806, 1990-01 - 10/sup 5/ times biasing current improvement in an electron wave interference device with vertical superlattices
Tsubaki K.; Tokura Y.; Fukui T.; Saito H.; Susa N.
IEEE Trans. Electron Devices (USA), IEEE Transactions on Electron Devices,pt 1/36(11)/p.2618, 1990-01 - Lateral interface mixing in GaAs quantum well wire arrays
Fukui T.; Saito H.; Tokura Y.
Applied Physics Letters/55(19)/p.1958-1959, 1990-01 - GaAs tetrahedral quantum dots: towards a zero-dimensional electron-hole system
Fukui T.; Ando S.; Tokura Y.; Toriyama T.
Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials/p.99-102, 1991-01 - さらに表示...
- Dirac Cone Migration -Decay and Frequency Shift of Inter and Intravalley Phonons in Graphene-