都倉 康弘(トクラ ヤスヒロ)

研究者情報全体を表示

論文
  • Fabrication of MgB2 nanowire single-photon detector with meander structure
    Hiroyuki Shibata; Tatsushi Akazaki; Yasuhiro Tokura
    APEX/6/p.23101, 2013
  • Slow light enhanced correlated photon pair generation in photonic-crystal coupled-resonator optical waveguides
    Nobuyuki Matsuda; Hiroki Takesue; Kaoru Shimizu; Yasuhiro...
    Optics Express/21(7)/pp.8596-8604, 2013-04
  • 電場による単電子スピンの制御
    都倉 康弘
    固体物理/44(1)/pp.17-23, 2009-01
  • Conductivity oscillation due to quantum interference in a proposed wash-board transistor
    Tokura Y.; Tsubaki K.
    Applied Physics Letters/51(22)/p.1807-1808, 1987-01
  • Coherence length in quantum interference devices having periodic potential
    Tsubaki K.; Tokura Y. (Ed.)Sugano T.; Chang R.P.H.; Kam...
    Proceedings of the First International Conference on Electronic Materials. New Materials and New Physical Phenomena for Electronics of the 21st Century (ICEM '88), 1988-01
  • Superlattice structure observation for (AlAs)/sub 1/2/(GaAs)/sub 1/2/ grown on (001) vicinal GaAs substrates
    Fukui T.; Saito H.; Tokura Y.
    Japanese Journal of Applied Physics, Part 2/27(7)/p.1320-1322, 1988-01
  • Terrace width ordering mechanism during epitaxial growth on a slightly tilted substrate
    Tokura Y.; Saito H.; Fukui T.
    Journal of Crystal Growth/94(1)/p.46-52, 1989-01
  • Electron wave interference device with vertical superlattices working in large current region
    Tsubaki K.; Tokura Y.; Fukui T.; Saito H.; Susa N.
    Electronics Letters/25(11)/p.728-730, 1989-01
  • New field-effect transistor with quantum wire and modulation- doped heterostructures
    Tsubaki K.; Fukui T.; Tokura Y.; Saito H.; Susa N.
    Electronics Letters/24(20)/p.1267-1269, 1989-01
  • Coherence length in quantum interference devices having periodic potential
    Tsubaki K.; Tokura Y.
    Applied Physics Letters/53(10)/p.859-861, 1989-01
  • Electronic states in an AlGaAs-GaAs modulation-doped hetero- interface with a 10 nm-order periodic structure
    Tokura Y.; Tsubaki K.; Susa N.
    Surface Science/228(1-3)/p.280-282, 1990-01
  • Electronic state of AlAs/GaAs vertical superlattice in modulation doped structure
    Tsubaki K.; Tokura Y.; Susa N. (Ed.) Ikoma T.; Watanabe...
    Gallium Arsenide and Related Compounds 1989. Proceedings of the Sixteenth International Symposium/p.869-874, 1990-01
  • (AlAs)/sub 1/2/(GaAs)/sub 1/2/ fractional-layer superlattices grown on (001) vicinal GaAs substrates by MOCVD
    Fukui T.; Saito H.; Tokura Y.; Tsubaki K.; Susa N.
    Surface Science/228(1-3)/p.20-23, 1990-01
  • Electron effective-mass modulation transistor
    Tokura Y.; Susa N.
    Journal of Applied Phyisics/67(4)/p.2171-2172, 1990-01
  • Electronic states in lateral structures on modulation-doped heterointerfaces
    Tokura Y.; Tsubaki K.; Susa N.
    Applied Physics Letters/55(14)/p.1403-1405, 1990-01
  • Mobility modulation on a modulation-doped structure with an AlAs/GaAs fractional layer superlattice
    Tsubaki K.; Tokura Y.; Susa N.
    Applied Physics Letters/57(8)/p.804-806, 1990-01
  • 10/sup 5/ times biasing current improvement in an electron wave interference device with vertical superlattices
    Tsubaki K.; Tokura Y.; Fukui T.; Saito H.; Susa N.
    IEEE Trans. Electron Devices (USA), IEEE Transactions on Electron Devices,pt 1/36(11)/p.2618, 1990-01
  • Lateral interface mixing in GaAs quantum well wire arrays
    Fukui T.; Saito H.; Tokura Y.
    Applied Physics Letters/55(19)/p.1958-1959, 1990-01
  • GaAs tetrahedral quantum dots: towards a zero-dimensional electron-hole system
    Fukui T.; Ando S.; Tokura Y.; Toriyama T.
    Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials/p.99-102, 1991-01
  • Resonant tunneling through one-dimensional states constricted by Al/sub x/Ga/sub 1-x/As/GaAs/Al/sub x/Ga/sub 1-x/As heterojunctions and high-resistance regions induced by focused Ga ion beam implantation
    Tarucha S.; Hirayama Y.; Tokura Y.
    Superlattices and Microstructures/9(3)/p.341-344, 1991-01
  • GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition
    Fukui T.; Ando S.; Tokura Y.; Toriyama T.
    Applied Physics Letters/58(18)/p.2018-2020, 1991-01
  • Subband mixing effect in double-barrier diodes with a restricted lateral dimension
    Tarucha S.; Hirayama Y.; Tokura Y.
    Applied Physics Letters/58(15)/p.1623-1625, 1991-01
  • Density of states of an AlAs/GaAs fractional superlattice in a modulation-doped structure
    Tsubaki K.; Tokura Y.; Susa N.
    Applied Physics Letters/57(20)/p.2101-2103, 1991-01
  • Aharonov-Bohm effect under high magnetic field in a Corbino disk anti-dot channel
    Tsubaki K.; Honda T.; Tokura Y.
    Surface Science/263(1-3)/p.392-395, 1992-01
  • Capacitance in single electron tunneling
    Stopa M.P.; Tokura Y.
    Science and Technology of Mesoscopic Structures, Ed. Namba, S.; Hamaguchi, C.; Ando, T.,/p.297-306, 1992-01
  • さらに表示...