岩室 憲幸(イワムロ ノリユキ)
- 論文
- An investigation of avalanche ruggedness and failure mechanisms of 4H SiC trench MOSFETs in unclamped inductive switching by varying load inductances over a wide range
Tsuji Takashi; Iwamuro Noriyuki
JAPANESE JOURNAL OF APPLIED PHYSICS/62(4), 2023-04 - Experimental Demonstration of the Surge Current Capability of Embedded SBDs in 1.2-kV SiC SBD-integrated Trench MOSFETs with Ti and Ni as Schottky Metals
北村雄大; 俵 武志; 原田 信介; 矢野裕司; Iwamuro Noriyuki
Extended Abstracts of 2022 International Conference on Solid State Devices and Materials/pp.701-702, 2022-09-26 - Experimental and Numerical Investigations of the Electrical Characteristics of SiC SBD-Integrated MOSFETs by Varying the Area Occupied by Embedded SBDs
柏佳介; 髙橋光希; 矢野裕司; Iwamuro Noriyuki
Extended Abstracts of 2022 International Conference on Solid State Devices and Materials/pp.703-704, 2022-09-26 - Enhanced Short-circuit Capability for 1.2 kV SiC SBD-integrated Trench MOSFETs Using Cu Blocks Sintered on the Source Pad
Yao Kailun; Kato Fumiki; Tanaka So; Harada Shinsuke; Yano...
Proceedings of The 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD2022)/pp.297-300, 2022-5-22 - Demonstration of the Surge Current Capability of Embedded SBDs in SiC SBD-Integrated Trench MOSFETs with a Thick Cu Block
Kitamura Yudai; Yano Hiroshi; 岩室憲幸; Kato Fumiki; Tanak...
Proceedings of The 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD2022)/pp.109-112, 2022-05-22 - Investigation of the Short-Circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates using Electro-Thermal-Mechanical Analysis
Kashiwa Keisuke; Yao Kailun; Yano Hiroshi; 岩室憲幸; Harad...
Proceedings of The 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD2022)/pp.113-116, 2022-05-22 - 電気熱連成解析によるモータ駆動時の SiC MOSFET の温度推定
松岡亨卓; 磯部 高範; 加藤史樹; 先崎純寿; 佐藤弘; 岩室憲幸
2022年電気学会産業応用部門大会, 2022-08 - Investigation of the Short-circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates Using Electro-thermal- mechanical Analysis
柏佳介; 姚 凱倫; 信介 原田; 矢野裕司; Iwamuro Noriyuki
Proceedings of The 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD2022)/pp.113-116/pp.113-116, 2022-05-22 - Experimental Demonstration of the Surge Current Capability of Embedded SBDs in 1.2-kV SiC SBD-integrated Trench MOSFETs with Ti and Ni as Schottky Metals
北村雄大; 俵 武志; 原田 信介; 矢野裕司; Iwamuro Noriyuki
Extended Abstracts of 2022 International Conference on Solid State Devices and Materials/pp.701-702, 2022-09-26 - Experimental and Numerical Investigations of the Electrical Characteristics of SiC SBD-Integrated MOSFETs by Varying the Area Occupied by Embedded SBDs
柏佳介; 髙橋光希; 矢野裕司; Iwamuro Noriyuki
Extended Abstracts of 2022 International Conference on Solid State Devices and Materials/pp.703-704, 2022-09-26 - AC ゲートストレス印加による SiC-MOSFET のしきい値電圧変動評価
円城寺佑哉; 岩室憲幸; 矢野 裕司
第83回応用物理学会秋季学術講演会 予稿集/p.12-122, 2022-09-20 - モノリシック相補型インバータに向けた4H-SiC横型p-ch SJ-MOSFETの構造設計
森海斗; 岩室憲幸; 矢野 裕司
先進パワー半導体分科会 第9回講演会 予稿集/pp.91-92, 2022-12-20 - バイポーラACゲートストレス印加によるSiC-MOSFETのしきい値電圧変動評価
円城寺佑哉; 岩室憲幸; 矢野 裕司
先進パワー半導体分科会 第9回講演会 予稿集/pp.75-75, 2022-12-20 - Comparative study on short-circuit and surge current capabilities of 1.2 kV SiC SBD-embedded MOSFETs
柏佳介; 髙橋光希; 北村雄大; 矢野裕司; Iwamuro Noriyuki
JAPANESE JOURNAL OF APPLIED PHYSICS/62(SC1073)/pp.SC2073-1-SC1073-10, 2023-02 - Study on enhancing of the surge current capabilities of embedded SBDs in SWITCH-MOSs and body-PiN-diodes in SiC trench MOSFETs
北村雄大; 加藤史樹; 田中聡; 俵 武志; 原田 信介; 佐藤弘; 矢野裕司; Iwamuro Noriyuki
JAPANESE JOURNAL OF APPLIED PHYSICS/62(SC1007)/pp.SC1007-1-SC1007-9, 2022-12 - Significant Improvement of Switching Characteristics in a 1.2-kV SiC SWITCH-MOS by the Application of Kelvin Source Connection
松井ケビン; 俵 武志; 原田 信介; 田中聡; 佐藤弘; 矢野裕司; Iwamuro Noriyuki
IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING/18(2)/pp.278-285, 2022-10 - Enhanced Short-circuit Capability for 1.2 kV SiC SBD-integrated Trench MOSFETs Using Cu Blocks Sintered on the Source Pad
Yao Kailun; Kato Fumiki; Tanaka So; Harada Shinsuke; Yano...
Proceedings of The 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD2022)/pp.297-300, 2022-5-22 - Investigation of the Short-Circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates using Electro-Thermal-Mechanical Analysis
Kashiwa Keisuke; Yao Kailun; Yano Hiroshi; 岩室憲幸; Harada S...
Proceedings of The 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD2022)/pp.113-116, 2022-05-22 - Demonstration of the Surge Current Capability of Embedded SBDs in SiC SBD-Integrated Trench MOSFETs with a Thick Cu Block
Kitamura Yudai; Yano Hiroshi; 岩室憲幸; Kato Fumiki; Tanaka S...
Proceedings of The 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD2022)/pp.109-112, 2022-05-22 - Characterization of Interface Traps Near Valence Band by Split C-V measurement
Cui Xiaoran; 岩室憲幸; Yano Hiroshi
第69回応用物理学会春季学術講演会 予稿集/p.100000000-138, 2022-03-22 - 4H-SiCショットキーpnダイオードの最適設計検討と動作解析
森海斗; 亀和田亮; 岩室 憲幸; 矢野裕司
応用物理学会先進パワー半導体分科会 第8回講演会 予稿集/pp.61-62, 2021-12-09 - TCADシミュレーションを用いた1.2kV SBD内蔵 SiC MOSFETの電気特性解析
髙橋光希; 柏佳介; 松井ケビン; 矢野裕司; 岩室 憲幸
令和4年電気学会全国大会 予稿集/pp.4-5, 2022-03-21 - モノリシック相補型電力変換器に向けた4H-SiC RESURF p-MOSFETの最適設計の検討
西城智哉; 岩室 憲幸; 矢野裕司
応用物理学会 先進パワー半導体分科会 第８回講演会 予稿集/pp.95-96, 2021-12-09 - 4H-SiCショットキーpnダイオードの導電機構解析
森海斗; 亀和田亮; 矢野裕司; 岩室 憲幸
第69回応用物理学会春季学術講演会 予稿集/p.100000000-015, 2022-03-22 - 改良高速On-the-fly法によるSiC MOSFETのNBTI評価
坂田大輝; 岡本大; 染谷満; 平井悠久; 岡本光央; 原田 信介; 畠山哲夫; 矢野裕司; 岩室 憲幸
応用物理学会 先進パワー半導体分科会 第8回講演会 予稿集/pp.27-28, 2021-12-09 - さらに表示...
- An investigation of avalanche ruggedness and failure mechanisms of 4H SiC trench MOSFETs in unclamped inductive switching by varying load inductances over a wide range