岩室 憲幸(イワムロ ノリユキ)
- 論文
- Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage
Namai Masaki; An Junjie; Yano Hiroshi; Iwamuro Noriyuki
Japanese Journal of Applied Physics/57(7月)/pp.074102-074111, 2018-06 - Correction of IGBT History, State-of-the-Art, and Future Prospects
Iwamuro Noriyuki; Laska Thomas
IEEE Transaction on Electron Devices/65(6)/pp.2675-2675, 2018-06 - Methodology for Enhanced Short-Circuit Capability of SiC MOSFETs
An Junjie; Namai Masaki; Yano Hiroshi; Iwamuro Noriyuki; ...
Proceedings of International Symposium on Power Semiconductor Devices & ICs (IEEE ISPSD)/pp.391-394, 2018-05 - Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power
Goto Taiga; Shirai Takuma; Tokuchi Akira; Naito Takashi; ...
Material Science Forum/924/pp.858-861, 2018-06 - Solid State Devices and Materials FOREWORD
Kageshima Hiroyuki; Hosoi Takuji; Iwamoto Satoshi; Ari...
JAPANESE JOURNAL OF APPLIED PHYSICS/57(4:::SI), 2018-04 - Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors
Y Karamoto; X Zhang; D Okamoto; M Sometani; T Hatakeyama...
JAPANESE JOURNAL OF APPLIED PHYSICS/57(6S3)/pp.06KA06-1-06KA06-6, 2018-05 - Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors
X Zhang; D Okamoto; T Hatakeyama; M Sometani; S Harada; N...
JAPANESE JOURNAL OF APPLIED PHYSICS/57(6S3)/pp.06KA04-1-06KA04-5, 2018-05 - Investigation of robustness capability of -730V p-channel vertical SiC power MOSFET for complementary inverter applications
An Junjie; Namai Masaki; Yano Hiroshi; Iwamuro Noriyuki
IEEE Transaction on Electron Devices/64(10)/pp.4219-4225, 2017-10 - Characterization of Near-Interface Traps at 4H-SiC Metal-Oxide-Semiconductor Interfaces Using a Modified Distributed Circuit Model
Zhang X.; Okamoto D.; Hatakeyama T.; Sometani M.; Harada ...
Appl. Phys. Express/10(6)/pp.064101-1-064101-4, 2017-06 - Experimental and Numerical Demonstration and Optimized Methods for SiC Trench MOSFET Short-Circuit Capability
Namai M.; An J.; Yano Hiroshi; Iwamuro N.
Proceedings of The 29th International Symposium on Power Semiconductor Devices & ICs/pp.363-366, 2017-05 - Unclamped Inductive Switching試験による4H-SiC MOSFETの最大接合温度の評価
安 俊傑; 生井 正輝; 岡本 大; 矢野 裕司; 只野 博; 岩室 憲幸
電気学会論文誌Ｃ/137(2)/pp.216-221, 2017 - 新材料パワーデバイスの最新技術
岩室 憲幸; 坂東 章; 矢野 浩司; 宮澤 哲哉; 江口 博臣; 三浦 喜直; 鹿内 洋志; 池田 成明; 上本...
電気学会論文誌． Ｃ/137(1)/pp.13-19, 2017 - Ohmic contact on n- and p-type ion-implanted 4H-SiC with low-temperature metallization process for SiC MOSFETs
Shimizu Haruka; Shima Akio; Shimamoto Yasuhiro; Iwamur...
JAPANESE JOURNAL OF APPLIED PHYSICS/56(4::S)/p.04CR15, 2017-04 - IGBT History, State-of-the-Art, and Future Prospects
Iwamuro Noriyuki; Laska Thomas
IEEE TRANSACTIONS ON ELECTRON DEVICES/64(3)/pp.741-752, 2017-03 - A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors
Zhang X. F.; Okamoto D.; Hatakeyama T.; M. Sometani; Harad...
Abstacts of 47th IEEE Semiconductor interface Specialist Conference/p.11.15, 2016-12 - Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation
An Junjie; Namai Masaki; Iwamuro Noriyuki
JAPANESE JOURNAL OF APPLIED PHYSICS/55(12)/p.124102, 2016-12 - Experimental Demonstration of -730V Vertical SiC p-MOSFET with High Short Circuit Withstand Capability for Complementary Inverter Applications
An J.; Namai M.; Tanabe M.; Okamoto D.; Yano Hiroshi; Iwa...
Technical Digest of International Electron Device Meeting 2016/pp.IEDM16-272-IEDM16-275, 2016-12 - Photoelectron yield spectroscopy and inverse photoemissin spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials
Murakami Tatsuya; Masuda Takashi; Inoue Satoshi; Yano Hirosh...
AIP Advances/6(5)/p.055021, 2016-06 - Photoelectron Yield Spectroscopy and Inverse Photoemission Spectroscopy Evaluations of P-type Amorphous Silicon Carbide Films Prepared using Liquid Materials
Tatsuya Murakami; Takashi Masuda; Takashi Masuda; Yano H...
AIP Advances/6(5)/pp.055021/1-055021/6, 2016-05 - A dead-time minimized inverter by using complementary topology and its experimental evaluation of harmonics reduction
Okuda Kazuma; Isobe Takanori; Tadano Hiroshi; Iwamuro No...
2016 18TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'16 ECCE EUROPE), 2016 - 次世代パワーエレクトロニクスを支えるSiCパワー半導体デバイスならびにその実装技術
岩室 憲幸
SEAJ Journal, 2016-01 - デッドタイムを最小化する相補型インバータ及びそのゲート駆動回路の検討
奥田 一真; 磯部 高範; 只野 博; 岩室 憲幸
平成27年電気学会産業応用部門大会, 2015-09 - Recent Progress of Power Semiconductor Devices and Their Futures
Iwamuro Noriyuki
BIT's 4th Annual World Congress of Emerging Info-Tech, 2015-04 - 相補型インバータ向け縦型SiC-pMOSFETの検討
奥田 一真; 磯部 高範; 矢野 裕司; 岩室 憲幸; 只野 博
パワーエレクトロニクス学会誌/40/pp.238-238, 2015-03 - パワーデバイスの最新動向 驚異的な進歩を遂げたIGBT
岩室 憲幸
PDEA Report vol.4/4, 2014-08 - さらに表示...
- Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage