矢野 裕司(ヤノ ヒロシ)
- 論文
- Difference of NIT density distribution in 4H-SiC MOS interfaces for Si- and C-faces
張 旭芳; 岡本 大; 畠山 哲夫; 染谷 満; 原田 信介; 岩室 憲幸; 矢野 裕司
電子デバイス界面テクノロジー研究会 －材料・プロセス・デバイス特性の物理－ 第23回研究会 講演予稿集/pp.199-202, 2018-01 - メタルアニール工程を省いた4H-SiCイオン注入n+層オーミックコンタクト実現の検討
北島魁人; 岡本大; 矢野裕司; 岩室 憲幸
平成30年電気学会全国大会講演論文集/p.4-011, 2018-03 - Stress distribution at SiO2/4H-SiC interface studied by Confocal Raman Microscopy
W. Fu; A. Kobayashi; 矢野 裕司; S. Harada; T. Sakurai
第65回応用物理学会春季学術講演会 講演予稿集/p.13-166, 2018-03 - pチャネル4H-SiC MOSFETにおける酸化膜リーク電流伝導機構の解析
根本 宏樹; 岡本 大; 染谷 満; 木内 祐治; 畠山 哲夫; 原田 信介; 岩室 憲幸; 矢野 裕司
第65回応用物理学会春季学術講演会 講演予稿集/p.13-282, 2018-03 - Impact of passivation treatments on channel mobility for p-channel 4H-SiC MOSFETs
X Zhou; D Okamoto; T Hatakeyama; M Sometani; S Harada; Y ...
第65回応用物理学会春季学術講演会 講演予稿集/p.13-172, 2018-03 - Comparison between Conduction Mechanisms of Leakage Current in Nitrided Thermal SiO2 Strates on 4H-SiC Si- and C-face Substrates
Y. Kiuchi; Sometani M.; Okamoto D.; Hatakeyama T.; Harada ...
Extended Abstracts of 2017 International Workshop on Dielectric Thin Films for Future Electron Devices/pp.151-152, 2017-11 - SiCパワーMOSFETの現状と信頼性技術
矢野 裕司
半導体信頼性技術ガイドラインセミナー, 2017-11 - SiCパワーMOSFETの現状と信頼性技術
矢野 裕司
半導体信頼性技術ガイドラインセミナー, 2018-02 - SiC MOSデバイスにおける界面欠陥と信頼性
矢野 裕司
第37回ナノテスティングシンポジウム (NANOTS2017) 会議録/pp.189-193, 2017-11 - Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage
Namai M.; An J.; Yano Hiroshi; Iwamuro N.
Jpn. J. Appl. Phys./57(7)/pp.074102-1-074102-10, 2018-07 - Methodology for Enhanced Short-Circuit Capability of SiC MOSFETs
An Junjie; Namai Masaki; Yano Hiroshi; Iwamuro Noriyuki; ...
Proceedings of International Symposium on Power Semiconductor Devices & ICs (IEEE ISPSD)/pp.391-394, 2018-05 - Hole trapping in SiC-MOS devices evaluated by fast-capacitance-voltage method
Hayashi Mariko; Sometani Mitsuru; Hatakeyama Tetsuo; Y...
JAPANESE JOURNAL OF APPLIED PHYSICS/57(4S)/pp.04FR15-1-04FR15-4, 2018-04 - Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors
Y Karamoto; X Zhang; D Okamoto; M Sometani; T Hatakeyama...
JAPANESE JOURNAL OF APPLIED PHYSICS/57(6S3)/pp.06KA06-1-06KA06-6, 2018-05 - Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors
X Zhang; D Okamoto; T Hatakeyama; M Sometani; S Harada; N...
JAPANESE JOURNAL OF APPLIED PHYSICS/57(6S3)/pp.06KA04-1-06KA04-5, 2018-05 - Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions
Sometani M; Okamoto M; Hatakeyama T; Iwahashi Y; Hayashi ...
JAPANESE JOURNAL OF APPLIED PHYSICS/57(4S)/pp.04FA07-1-04FA07-7, 2018-04 - 異原子導入によるSiC MOSFETの特性改善
岡本 大; 矢野裕司
応用物理/86(9)/pp.781-785, 2017-09 - Dynamic Characterization of the Vth Instability under the Pulsed AC Gate Bias Stress in 4H-SiC MOSFET
Okamoto M.; Sometani M.; Harada S.; Yano Hiroshi; Okumura...
Mater. Sci. Forum/897/pp.549-552, 2017-05 - Characterization of Near-Interface Traps at 4H-SiC Metal-Oxide-Semiconductor Interfaces Using a Modified Distributed Circuit Model
Zhang X.; Okamoto D.; Hatakeyama T.; Sometani M.; Harada ...
Appl. Phys. Express/10(6)/pp.064101-1-064101-4, 2017-06 - Experimental Demonstration of -730V Vertical SiC p-MOSFET with High Short Circuit Withstand Capability for Complementary Inverter Applications
An J.; Namai M.; Tanabe M.; Okamoto D.; Yano Hiroshi; Iwa...
Technical Digest of International Electron Device Meeting 2016/pp.IEDM16-272-IEDM16-275, 2016-12 - Characterization of Traps at Nitrided SiO2/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements
Hatakeyama T.; Kiuchi Y.; Sometani M.; Okamoto D.; Harada...
Abstracts of 47th IEEE Semiconductor interface Specialist Conference/p.11.17, 2016-12 - A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors
Zhang X. F.; Okamoto D.; Hatakeyama T.; M. Sometani; Harad...
Abstacts of 47th IEEE Semiconductor interface Specialist Conference/p.11.15, 2016-12 - SiC酸化膜への窒素、リン、ホウ素添加による界面特性改善効果
Yano Hiroshi
応用物理学会 先進パワー半導体分科会 第2回個別討論会テキスト/2(1)/pp.21-34, 2016-08 - Evaluation of Drain Current Decrease by AC Gate Bias Stress in Commercially Available SiC MOSFETs
Sometani M.; Iwahashi Y.; Okamoto M.; Harada S.; Yonezawa...
Proceedings of The 29th International Symposium on Power Semiconductor Devices & ICs/pp.395-398, 2017-05 - Experimental and Numerical Demonstration and Optimized Methods for SiC Trench MOSFET Short-Circuit Capability
Namai M.; An J.; Yano Hiroshi; Iwamuro N.
Proceedings of The 29th International Symposium on Power Semiconductor Devices & ICs/pp.363-366, 2017-05 - SiC MOSFETとMOS界面の最近の進展
矢野 裕司
表面科学学術講演会要旨集/35(0)/p.7, 2015 - さらに表示...
- Difference of NIT density distribution in 4H-SiC MOS interfaces for Si- and C-faces