矢野 裕司(ヤノ ヒロシ)
- 会議発表等
- Dynamic Characterization of the Vth Instability under the Pulsed AC Gate Bias Stress in 4H-SiC MOSFET
Okamoto M.; Sometani M.; Harada S.; Yano Hiroshi; Okumura...
11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)/2016-09-25--2016-09-29 - Threshold Voltage Instability in 4H-SiC MOSFETs with Phosphorus-doped and Nitrided Gate Oxides
Yano Hiroshi
11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)/2016-09-25--2016-09-29 - Experimental Demonstration of -730V Vertical SiC p-MOSFET with High Short Circuit Withstand Capability for Complementary Inverter Applications
An J.; Namai M.; Tanabe M.; Okamoto D.; Yano Hiroshi; Iwa...
International Electron Device Meeting 2016 (IEDM2016)/2016-12-03--2016-12-07 - Characterization of Traps at Nitrided SiO2/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements
Hatakeyama T.; Kiuchi Y.; Sometani M.; Okamoto D.; Harada...
47th IEEE Semiconductor interface Specialist Conference (SISC2016)/2016-12-07--2016-12-10 - A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors
Zhang X. F.; Okamoto D.; Hatakeyama T.; Sometani M.; Hara...
47th IEEE Semiconductor interface Specialist Conference (SISC2016)/2016-12-07--2016-12-10 - SiC酸化膜への窒素、リン、ホウ素添加による界面特性改善効果
Yano Hiroshi
先進パワー半導体分科会 第2回個別討論会/2016-08-01--2016-08-01 - Evaluation of Drain Current Decrease by AC Gate Bias Stress in Commercially Available SiC MOSFETs
Sometani M.; Iwahashi Y.; Okamoto M.; Harada S.; Yonezawa...
The 29th International Symposium on Power Semiconductor Devices & ICs (ISPSD2017)/2017-05-29--2017-06-01 - Experimental and Numerical Demonstration and Optimized Methods for SiC Trench MOSFET Short-Circuit Capability
Namai M.; An J.; Yano Hiroshi; Iwamuro N.
The 29th International Symposium on Power Semiconductor Devices & ICs (ISPSD2017)/2017-05-29--2017-06-01
- Dynamic Characterization of the Vth Instability under the Pulsed AC Gate Bias Stress in 4H-SiC MOSFET