Uedono Akira
- Affiliation
- Faculty of Pure and Applied Sciences
- Official title
- Professor
- Research projects
III属窒化物半導体のイオン注入不純物活性化機構の解明と点欠陥制御 2021 -- 2024 上殿 明良 Japan Society for the Promotion of Science/Grant-in-Aid for Scientific Research(B) 17,290,000Yen ナノ空隙検出のためのサブミリメートル空間分解能を有する陽電子消滅装置の開発 2021 -- 2022 上殿 明良 Japan Society for the Promotion of Science/Grant-in-Aid for Challenging Research (Exploratory) 6,370,000Yen 陽電子消滅による結晶特異構造のキャリア捕獲・散乱ダイナミックスの評価 2016 -- 2020 上殿 明良 Japan Society for the Promotion of Science/Grant-in-Aid for Scientific Research on Innovative Areas 50,700,000Yen 低速陽電子ビームによる絶縁膜/Si界面の遷移層及び歪の研究 2007 -- 2010 Japan Society of for the Promotion of Science/基盤研究(B) 14,560,000Yen - Degree
Ph.D Ph.D. in Engineering - Articles
- Optical and electrical properties of silicon-implanted α-Al2O3
Hironori Okumura; Riena Jinno; Akira Uedono; Masataka Imura
Japanese Journal of Applied Physics/60(10), 2021-09 - Effect of free-volume holes on static mechanical properties of epoxy resins studied by positron annihilation and PVT experiments
Zhang HJ; Sellaiyan Selvakumar; Sako K; A Uedono; Y Tanigu...
Polymer/190/p.122225, 2020-03 - Morphological characterization and mechanical behavior by dicing and thinning on direct bonded Si wafer
Inoue Fumihiro; Podpod Arnita; Peng Lan; Phommahaxay ...
JOURNAL OF MANUFACTURING PROCESSES/58/pp.811-818, 2020-10 - Dynamic Observation and Theoretical Analysis of Initial O-2 Molecule Adsorption on Polar and m-Plane Surfaces of GaN
Sumiya Masatomo; Sumita Masato; Asai Yuya; Tamura Ryo...
JOURNAL OF PHYSICAL CHEMISTRY C/124(46)/pp.25282-25290, 2020-11 - Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam
Akazawa Masamichi; Kamoshida Ryo; Murai Shunta; Kachi ...
JAPANESE JOURNAL OF APPLIED PHYSICS/60(1), 2021-01 - Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam
Uedono Akira; Sakurai Hideki; Narita Tetsuo; Sierakows...
SCIENTIFIC REPORTS/10(1), 2020-10 - Free Volume in Epoxy Resins for CFRP Studied by Means of Positron Annihilation
上殿 明良
Journal of the Japan Society for Precision Engineering/86(3)/pp.206-209, 2020 - Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams
Uedono Akira; Shojiki Kanako; Uesugi Kenjiro; Chichibu...
JOURNAL OF APPLIED PHYSICS/128(8), 2020-08 - Growth of high-quality GaN by halogen-free vapor phase epitaxy
Kimura Taishi; Kataoka Keita; Uedono Akira; Amano Hir...
APPLIED PHYSICS EXPRESS/13(8), 2020-08 - Hole capture-coefficient of intrinsic nonradiative recombination centers that commonly exist in bulk, epitaxial, and proton-irradiated ZnO
Chichibu Shigefusa F.; Uedono Akira; Kojima Kazunobu; ...
JOURNAL OF APPLIED PHYSICS/127(21), 2020-06 - Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3
Ishibashi S.; Uedono A.
ACTA PHYSICA POLONICA A/137(2)/pp.231-234, 2020-02 - Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams
Uedono A.; Egger W.; Koschine T.; Hugenschmidt C.; Dickma...
ACTA PHYSICA POLONICA A/137(2)/pp.227-230, 2020-02 - Selective trapping of positrons by Ag nanolayers in a V/Ag multilayer system
Qi N.; Zhang H. X.; Chen Z. Q.; Ren F.; Zhao B.; Jiang M...
AIP ADVANCES/10(3), 2020-03 - Effect of Free-Volume Hole Fraction on Dynamic Mechanical Properties of Epoxy Resins Investigated by Pressure-Volume-Temperature Technique
Zhang H. J.; Sellaiyan S.; Sako K.; Uedono A.; Taniguchi ...
JOURNAL OF PHYSICAL CHEMISTRY B/124(9)/pp.1824-1832, 2020-03 - Magnetic properties of metastable bcc phase in Fe64Ni36 alloy synthesized through polyol process
Jacob G. Antilen; Sellaiyan S.; Uedono A.; Joseyphus R. ...
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING/126(2), 2020-01 - Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams
Uedono Akira; Ueno Wataru; Yamada Takahiro; Hosoi Tak...
JOURNAL OF APPLIED PHYSICS/127(5), 2020-02 - The Influence of AlN Nucleation Layer on Radio Frequency Transmission Loss of AlN-on-Si Heterostructure
Chang Shane; Zhao Ming; Spampinato Valentina; Franquet...
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE/217(7), 2020-04 - Pore structure analysis of ionic liquid-templated porous silica using positron annihilation lifetime spectroscopy
Sagara Akihiko; Yabe Hiroki; Chen X.; Vereecken Phili...
MICROPOROUS AND MESOPOROUS MATERIALS/295, 2020-03 - Accelerator operation 2018
K. Sasa; S. Ishii; Y. Tajima; T. Takahashi; Y. Yamato; M....
University of Tsukuba Tandem Accelerator Complex (UTTAC) Annual report 2018/UTTAC-88/p.1, 2019-09 - 筑波大学タンデム加速器施設の現状報告
笹 公和; 石井 聡; 髙橋 努; 大和 良広; 田島 義一; 松村 万寿美; 森口 哲朗; 上殿 明良
Proceedings of the 16th Annual Meeting of Particle Accelerator Society of Japan (PASJ2019)/pp.1198-1120, 2019-08 - Annealing Behavior of Vacancy-Type Defects in Mg- and H-Implanted GaN Studied Using Monoenergetic Positron Beams
Uedono Akira; Iguchi Hiroko; Narita Tetsuo; Kataoka K...
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS/256(10), 2019-10 - Preparation and characterization of cellulose acetate membranes with TEMPO-oxidized cellulose nanofibrils containing alkyl ammonium carboxylates
Shimizu Michiko; Alvarez-Asencio Ruben; Nordgren Nikla...
CELLULOSE/27(3)/pp.1357-1365, 2020-02 - Impact of defects on the electrical properties of p-n diodes formed by implanting Mg and H ions into N-polar GaN
Iguchi Hiroko; Narita Tetsuo; Kataoka Keita; Kanechika...
JOURNAL OF APPLIED PHYSICS/126(12), 2019-09 - Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique
Irokawa Yoshihiro; Nabatame Toshihide; Yuge Kazuya; Ue...
AIP ADVANCES/9(8), 2019-08 - Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys
Ishibashi Shoji; Uedono Akira; Kino Hiori; Miyake Tak...
JOURNAL OF PHYSICS-CONDENSED MATTER/31(47), 2019-11 - more...
- Optical and electrical properties of silicon-implanted α-Al2O3
- Books
- Point defects in GaN and related group-III nitrides studied by means of positron annihilation
Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
GALLIUM NITRIDE MATERIALS AND DEVICES VI/SPIE-INT SOC OPTICAL ENGINEERING, 2011-01 - Application of positron annihilation technique to front and backend processes for modern LSI devices
Uedono A.; Ishibashi S.; Oshima N.; Ohdaira T.; Suzuki R.
12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12)/IOP PUBLISHING LTD, 2011-01 - Study of high-k gate dielectrics by means of positron annihilation
Uedono A.; Naito T.; Otsuka T.; Ito K.; Shiraishi K.; Yam...
Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10/WILEY-V C H VERLAG GMBH/pp.3599-3604, 2007-01 - Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams
Uedono A.; Inoue N.; Hayashi Y.; Eguchi K.; Nakamura T.; ...
PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE/IEEE/pp.75-77, 2009-01 - Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam
Uedono A; Kiyohara M; Shimoyama K; Matsunaga Y; Yasui N; ...
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS/TRANS TECH PUBLICATIONS LTD/pp.201-203, 2004-01 - Point defects in thin HfAIO(x) films probed by monoenergetic positron beams
Uedono A; Mitsuhashi R; Horiuchi A; Torii K; Yamabe K; Ya...
FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES/MATERIALS RESEARCH SOCIETY/pp.43-48, 2004-01 - Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE
Shimizu Y; Kobayashi N; Uedono A; Okada Y
COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS/IOP PUBLISHING LTD/pp.255-258, 2005-01 - Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications
Shimizu Yukiko; Miyashita Naoya; Mura Yusuke; Uedono Aki...
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2/IEEE/pp.811-814, 2006-01
- Point defects in GaN and related group-III nitrides studied by means of positron annihilation
- Conference, etc.
- Electrical properties of silicon-implanted alpha-Al2O3
Okumura Hironori; Jinno Riena; UEdono Akira; Imura Masataka
The 4th International Workshop on Gallium Oxide and Related Materials/2022-10-23--2022-10-27 - Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy
Uedono Akira; Dickmann Marcel; Egger Werner; Hugenschm...
Conference on Gallium Nitride Materials and Devices XV/2020-02-04--2020-02-06 - Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors
Chichibu Shigefusa F.; Shima Kohei; Kojima Kazunobu; I...
Conference on Gallium Nitride Materials and Devices XV/2020-02-04--2020-02-06 - Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN -
Uedono Akira; Egger Werner; Hugenschmidt Christoph; Is...
Compound Semiconductor Week (CSW) Conference/2019-05-19--2019-05-23 - Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3
Ishibashi S.; Uedono A.
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS)/2019-09-02--2019-09-06 - Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams
Uedono A.; Egger W.; Koschine T.; Hugenschmidt C.; Dickma...
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS)/2019-09-02--2019-09-06 - Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes
Shima Kohei; Kojima Kazunobu; Uedono Akira; Chichibu ...
19th International Workshop on Junction Technologies (IWJT)/2019-06-06--2019-06-07 - Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy
Inoue Fumihiro; Peng Lan; Iacovo Serena; Nagano Fuya; ...
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)/2019-05-21--2019-05-25 - Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
Chichibu Shigefusa F.; Shima Kohei; Kojima Kazunobu; T...
International Workshop on Bulk Nitride Semiconductors (IWN)/2018-11-11--2018-11-16 - Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE
Yamazaki A.; Naramoto H.; Sasa K.; Ishii S.; Tomita S.; S...
23rd International Conference on Ion Beam Analysis (IBA)/2017-10-08--2017-10-13 - 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出
Akira Uedono; Islam Muhammad Monirul; Sakurai Takeaki; ka...
2018年第79応用物理学会 秋季学術講演会/2018-09-18--2018-09-21 - Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films
Iwashita Shinya; Denpoh Kazuki; Kagaya Munehito; Kikuc...
International Thin Films Conference (TACT)/2017-10-15--2017-10-18 - 筑波大学タンデム加速器施設UTTACの現状(2016年度)
森口 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場 大一郎; 笹 公和; 上殿 明良
第30回タンデム加速器及びその周辺技術の研究会/2017-07-06--2017-07-07 - AIN metal-semiconductor field-effect transistors using Si-ion implantation
Okumura Hironori; Suihkonen Sami; Lemettinen Jori; Ued...
International Conference on Solid State Devices and Materials (SSDM)/2017-09-19--2017-09-22 - Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam
Koike Kazuto; Yano Mitsuaki; Gonda Shun-ichi; Uedono ...
29th International Conference on Defects in Semiconductors (ICDS)/2017-07-31--2017-08-04 - The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
Chichibu S. F.; Uedono A.; Kojima K.; Ikeda H.; Fujito K...
29th International Conference on Defects in Semiconductors (ICDS)/2017-07-31--2017-08-04 - Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams
Uedono Akira; Takashima Shinya; Edo Masaharu; Ueno Ka...
12th International Conference on Optics of Surfaces and Interfaces (OSI)/2017-06-25--2017-06-30 - Point defects in GaN and related group-III nitrides studied by means of positron annihilation
Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
Conference on Gallium Nitride Materials and Devices VI/2011-01-24--2011-01-27 - Point defects in GaN and related group-III nitrides studied by means of positron annihilation
Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
Conference on Gallium Nitride Materials and Devices VI/2011-01-24--2011-01-27 - Application of positron annihilation technique to front and backend processes for modern LSI devices
Uedono A.; Ishibashi S.; Oshima N.; Ohdaira T.; Suzuki R.
12th International Workshop on Slow Positron Beam Techniques/2010-08-01--2010-08-06 - Point defects in group-III nitride semiconductors studied by positron annihilation
Uedono A.; Ishibashi S.; Ohdaira T.; Suzuki R.
2nd International Symposium on Growth of III Nitrides (ISGN-2) - Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams
Uedono A.; Inoue N.; Hayashi Y.; Eguchi K.; Nakamura T.; ...
IEEE International Interconnect Technology Conference - Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films during Electrical Stress Application
Hasunuma Ryu; Tamura Chihiro; Nomura Tsuyoshi; Kikuchi Y...
IEEE International Electron Devices Meeting (IEDM 2009) - Point defects in thin HfAIO(x) films probed by monoenergetic positron beams
Uedono A; Mitsuhashi R; Horiuchi A; Torii K; Yamabe K; Ya...
Symposium on Fundamentals of Novel Oxide/Semiconductor Interfaces held at the 2003 MRS Fall Meeting - Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers
Chichibu SF; Sugiyama M; Nozaka T; Suzuki T; Onuma T; Nak...
12th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 12) - more...
- Electrical properties of silicon-implanted alpha-Al2O3
- Teaching
2021-10 -- 2022-02 Research in Applied Physics IIIA University of Tsukuba. 2021-10 -- 2022-02 Advanced Labs I University of Tsukuba. 2021-10 -- 2022-02 Research in Applied Physics IVA University of Tsukuba. 2021-04 -- 2021-08 Research in Applied Physics IIIB University of Tsukuba. 2021-04 -- 2021-08 Research in Applied Physics IB University of Tsukuba. 2021-10 -- 2022-02 Research in Applied Physics IA University of Tsukuba. 2021-04 -- 2021-08 Research in Applied Physics IIB University of Tsukuba. 2021-04 -- 2021-08 Research in Applied Physics VB University of Tsukuba. 2021-10 -- 2022-02 Research in Applied Physics IIB University of Tsukuba. 2021-10 -- 2022-02 Laboratory Exercise for Electronics and Quantum Effect Engineering A University of Tsukuba. more...
(Last updated: 2019-07-12)