現在地

ホーム

上殿 明良(ウエドノ アキラ; Uedono, Akira)

face
所属
数理物質系
職名
教授
研究課題
陽電子消滅による結晶特異構造のキャリア捕獲・散乱ダイナミックスの評価2016 -- 2020上殿 明良日本学術振興会/新学術領域研究（研究領域提案型）50,700,000円
低速陽電子ビームによる絶縁膜／Ｓｉ界面の遷移層及び歪の研究2007 -- 2010日本学術振興会/基盤研究(B)14,560,000円
取得学位
工学博士Ph.D. in Engineering
論文
more...
著書
  • Point defects in GaN and related group-III nitrides studied by means of positron annihilation
    Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
    GALLIUM NITRIDE MATERIALS AND DEVICES VI, SPIE-INT SOC OPTICAL ENGINEERING, 2011-01
  • Application of positron annihilation technique to front and backend processes for modern LSI devices
    Uedono A.; Ishibashi S.; Oshima N.; Ohdaira T.; Suzuki R.
    12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12), IOP PUBLISHING LTD, 2011-01
  • Study of high-k gate dielectrics by means of positron annihilation
    Uedono A.; Naito T.; Otsuka T.; Ito K.; Shiraishi K.; Yam...
    Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10, WILEY-V C H VERLAG GMBH, pp.3599-3604, 2007-01
  • Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams
    Uedono A.; Inoue N.; Hayashi Y.; Eguchi K.; Nakamura T.; ...
    PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IEEE, pp.75-77, 2009-01
  • Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam
    Uedono A; Kiyohara M; Shimoyama K; Matsunaga Y; Yasui N; ...
    POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, TRANS TECH PUBLICATIONS LTD, pp.201-203, 2004-01
  • Point defects in thin HfAIO(x) films probed by monoenergetic positron beams
    Uedono A; Mitsuhashi R; Horiuchi A; Torii K; Yamabe K; Ya...
    FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, MATERIALS RESEARCH SOCIETY, pp.43-48, 2004-01
  • Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE
    Shimizu Y; Kobayashi N; Uedono A; Okada Y
    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, IOP PUBLISHING LTD, pp.255-258, 2005-01
  • Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications
    Shimizu Yukiko; Miyashita Naoya; Mura Yusuke; Uedono Akir...
    Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2, IEEE, pp.811-814, 2006-01
会議発表等
  • 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出
    Akira Uedono; Islam Muhammad Monirul; Sakurai Takeaki; ka...
    2018年第79応用物理学会 秋季学術講演会/2018-09-18--2018-09-21
  • Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films
    Iwashita Shinya; Denpoh Kazuki; Kagaya Munehito; Kikuchi ...
    International Thin Films Conference (TACT)/2017-10-15--2017-10-18
  • 筑波大学タンデム加速器施設UTTACの現状（2016年度）
    森口 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; ...
    第30回タンデム加速器及びその周辺技術の研究会/2017-07-06--2017-07-07
  • AIN metal-semiconductor field-effect transistors using Si-ion implantation
    Okumura Hironori; Suihkonen Sami; Lemettinen Jori; Uedono...
    International Conference on Solid State Devices and Materials (SSDM)/2017-09-19--2017-09-22
  • Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam
    Koike Kazuto; Yano Mitsuaki; Gonda Shun-ichi; Uedono Akir...
    29th International Conference on Defects in Semiconductors (ICDS)/2017-07-31--2017-08-04
  • The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
    Chichibu S. F.; Uedono A.; Kojima K.; Ikeda H.; Fujito K....
    29th International Conference on Defects in Semiconductors (ICDS)/2017-07-31--2017-08-04
  • Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams
    Uedono Akira; Takashima Shinya; Edo Masaharu; Ueno Katsun...
    12th International Conference on Optics of Surfaces and Interfaces (OSI)/2017-06-25--2017-06-30
  • Point defects in GaN and related group-III nitrides studied by means of positron annihilation
    Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
    Conference on Gallium Nitride Materials and Devices VI/2011-01-24--2011-01-27
  • Point defects in GaN and related group-III nitrides studied by means of positron annihilation
    Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
    Conference on Gallium Nitride Materials and Devices VI/2011-01-24--2011-01-27
  • Application of positron annihilation technique to front and backend processes for modern LSI devices
    Uedono A.; Ishibashi S.; Oshima N.; Ohdaira T.; Suzuki R.
    12th International Workshop on Slow Positron Beam Techniques/2010-08-01--2010-08-06
  • Point defects in group-III nitride semiconductors studied by positron annihilation
    Uedono A.; Ishibashi S.; Ohdaira T.; Suzuki R.
    2nd International Symposium on Growth of III Nitrides (ISGN-2)
  • Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams
    Uedono A.; Inoue N.; Hayashi Y.; Eguchi K.; Nakamura T.; ...
    IEEE International Interconnect Technology Conference
  • Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films during Electrical Stress Application
    Hasunuma Ryu; Tamura Chihiro; Nomura Tsuyoshi; Kikuchi Yu...
    IEEE International Electron Devices Meeting (IEDM 2009)
  • Point defects in thin HfAIO(x) films probed by monoenergetic positron beams
    Uedono A; Mitsuhashi R; Horiuchi A; Torii K; Yamabe K; Ya...
    Symposium on Fundamentals of Novel Oxide/Semiconductor Interfaces held at the 2003 MRS Fall Meeting
  • Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers
    Chichibu SF; Sugiyama M; Nozaka T; Suzuki T; Onuma T; Nak...
    12th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 12)
  • Characterization of Hf0.3Al0.7Ox fabricated by atomic-layer-deposition technique using monoenergetic positron beams
    Uedono A; Goto M; Higuchi K; Shiraishi K; Yamabe K; Kitaj...
    International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4)
  • Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE
    Shimizu Y; Kobayashi N; Uedono A; Okada Y
    31st International Symposium on Compound Semiconductors
  • Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications
    Shimizu Yukiko; Miyashita Naoya; Mura Yusuke; Uedono Akir...
    4th World Conference on Photovoltaic Energy Conversion
担当授業科目
2019-10 -- 2020-02電子・物理工学特別研究VA筑波大学
2019-10 -- 2020-02電子・物理工学特別研究IA筑波大学
2019-10 -- 2020-02電子・物理工学特別研究IVA筑波大学
2019-04 -- 2019-08電子・物理工学特別研究IIIB筑波大学
2019-10 -- 2020-02電子・物理工学特別研究IIIA筑波大学
2019-04 -- 2019-08電子・物理工学特別研究IA筑波大学
2019-10 -- 2020-02電子・物理工学特別研究IB筑波大学
2019-10 -- 2020-02電子・物理工学特別研究IIB筑波大学
2019-04 -- 2019-08電子・物理工学特別研究VA筑波大学
2019-10 -- 2020-02電子・物理工学特別研究IVB筑波大学
more...

(最終更新日: 2019-07-12)