Uedono Akira

Affiliation
Faculty of Pure and Applied Sciences
Official title
Professor
Research projects
III属窒化物半導体のイオン注入不純物活性化機構の解明と点欠陥制御2021 -- 2024上殿 明良Japan Society for the Promotion of Science/Grant-in-Aid for Scientific Research(B)17,290,000Yen
ナノ空隙検出のためのサブミリメートル空間分解能を有する陽電子消滅装置の開発2021 -- 2022上殿 明良Japan Society for the Promotion of Science/Grant-in-Aid for Challenging Research (Exploratory)6,370,000Yen
陽電子消滅による結晶特異構造のキャリア捕獲・散乱ダイナミックスの評価2016 -- 2020上殿 明良Japan Society for the Promotion of Science/Grant-in-Aid for Scientific Research on Innovative Areas50,700,000Yen
低速陽電子ビームによる絶縁膜／Ｓｉ界面の遷移層及び歪の研究2007 -- 2010Japan Society of for the Promotion of Science/基盤研究(B)14,560,000Yen
Degree
Ph.DPh.D. in Engineering
Articles
Books
  • Point defects in GaN and related group-III nitrides studied by means of positron annihilation
    Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
    GALLIUM NITRIDE MATERIALS AND DEVICES VI/SPIE-INT SOC OPTICAL ENGINEERING, 2011-01
  • Application of positron annihilation technique to front and backend processes for modern LSI devices
    Uedono A.; Ishibashi S.; Oshima N.; Ohdaira T.; Suzuki R.
    12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12)/IOP PUBLISHING LTD, 2011-01
  • Study of high-k gate dielectrics by means of positron annihilation
    Uedono A.; Naito T.; Otsuka T.; Ito K.; Shiraishi K.; Yam...
    Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10/WILEY-V C H VERLAG GMBH/pp.3599-3604, 2007-01
  • Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams
    Uedono A.; Inoue N.; Hayashi Y.; Eguchi K.; Nakamura T.; ...
    PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE/IEEE/pp.75-77, 2009-01
  • Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam
    Uedono A; Kiyohara M; Shimoyama K; Matsunaga Y; Yasui N; ...
    POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS/TRANS TECH PUBLICATIONS LTD/pp.201-203, 2004-01
  • Point defects in thin HfAIO(x) films probed by monoenergetic positron beams
    Uedono A; Mitsuhashi R; Horiuchi A; Torii K; Yamabe K; Ya...
    FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES/MATERIALS RESEARCH SOCIETY/pp.43-48, 2004-01
  • Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE
    Shimizu Y; Kobayashi N; Uedono A; Okada Y
    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS/IOP PUBLISHING LTD/pp.255-258, 2005-01
  • Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications
    Shimizu Yukiko; Miyashita Naoya; Mura Yusuke; Uedono Aki...
    Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2/IEEE/pp.811-814, 2006-01
Conference, etc.
  • Electrical properties of silicon-implanted alpha-Al2O3
    Okumura Hironori; Jinno Riena; UEdono Akira; Imura Masataka
    The 4th International Workshop on Gallium Oxide and Related Materials/2022-10-23--2022-10-27
  • Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy
    Uedono Akira; Dickmann Marcel; Egger Werner; Hugenschm...
    Conference on Gallium Nitride Materials and Devices XV/2020-02-04--2020-02-06
  • Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors
    Chichibu Shigefusa F.; Shima Kohei; Kojima Kazunobu; I...
    Conference on Gallium Nitride Materials and Devices XV/2020-02-04--2020-02-06
  • Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN -
    Uedono Akira; Egger Werner; Hugenschmidt Christoph; Is...
    Compound Semiconductor Week (CSW) Conference/2019-05-19--2019-05-23
  • Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3
    Ishibashi S.; Uedono A.
    15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS)/2019-09-02--2019-09-06
  • Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams
    Uedono A.; Egger W.; Koschine T.; Hugenschmidt C.; Dickma...
    15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS)/2019-09-02--2019-09-06
  • Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes
    Shima Kohei; Kojima Kazunobu; Uedono Akira; Chichibu ...
    19th International Workshop on Junction Technologies (IWJT)/2019-06-06--2019-06-07
  • Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy
    Inoue Fumihiro; Peng Lan; Iacovo Serena; Nagano Fuya; ...
    6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)/2019-05-21--2019-05-25
  • Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
    Chichibu Shigefusa F.; Shima Kohei; Kojima Kazunobu; T...
    International Workshop on Bulk Nitride Semiconductors (IWN)/2018-11-11--2018-11-16
  • Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE
    Yamazaki A.; Naramoto H.; Sasa K.; Ishii S.; Tomita S.; S...
    23rd International Conference on Ion Beam Analysis (IBA)/2017-10-08--2017-10-13
  • 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出
    Akira Uedono; Islam Muhammad Monirul; Sakurai Takeaki; ka...
    2018年第79応用物理学会 秋季学術講演会/2018-09-18--2018-09-21
  • Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films
    Iwashita Shinya; Denpoh Kazuki; Kagaya Munehito; Kikuc...
    International Thin Films Conference (TACT)/2017-10-15--2017-10-18
  • 筑波大学タンデム加速器施設UTTACの現状（2016年度）
    森口 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場　大一郎; 笹　公和; 上殿　明良
    第30回タンデム加速器及びその周辺技術の研究会/2017-07-06--2017-07-07
  • AIN metal-semiconductor field-effect transistors using Si-ion implantation
    Okumura Hironori; Suihkonen Sami; Lemettinen Jori; Ued...
    International Conference on Solid State Devices and Materials (SSDM)/2017-09-19--2017-09-22
  • Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam
    Koike Kazuto; Yano Mitsuaki; Gonda Shun-ichi; Uedono ...
    29th International Conference on Defects in Semiconductors (ICDS)/2017-07-31--2017-08-04
  • The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
    Chichibu S. F.; Uedono A.; Kojima K.; Ikeda H.; Fujito K...
    29th International Conference on Defects in Semiconductors (ICDS)/2017-07-31--2017-08-04
  • Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams
    Uedono Akira; Takashima Shinya; Edo Masaharu; Ueno Ka...
    12th International Conference on Optics of Surfaces and Interfaces (OSI)/2017-06-25--2017-06-30
  • Point defects in GaN and related group-III nitrides studied by means of positron annihilation
    Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
    Conference on Gallium Nitride Materials and Devices VI/2011-01-24--2011-01-27
  • Point defects in GaN and related group-III nitrides studied by means of positron annihilation
    Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
    Conference on Gallium Nitride Materials and Devices VI/2011-01-24--2011-01-27
  • Application of positron annihilation technique to front and backend processes for modern LSI devices
    Uedono A.; Ishibashi S.; Oshima N.; Ohdaira T.; Suzuki R.
    12th International Workshop on Slow Positron Beam Techniques/2010-08-01--2010-08-06
  • Point defects in group-III nitride semiconductors studied by positron annihilation
    Uedono A.; Ishibashi S.; Ohdaira T.; Suzuki R.
    2nd International Symposium on Growth of III Nitrides (ISGN-2)
  • Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams
    Uedono A.; Inoue N.; Hayashi Y.; Eguchi K.; Nakamura T.; ...
    IEEE International Interconnect Technology Conference
  • Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films during Electrical Stress Application
    Hasunuma Ryu; Tamura Chihiro; Nomura Tsuyoshi; Kikuchi Y...
    IEEE International Electron Devices Meeting (IEDM 2009)
  • Point defects in thin HfAIO(x) films probed by monoenergetic positron beams
    Uedono A; Mitsuhashi R; Horiuchi A; Torii K; Yamabe K; Ya...
    Symposium on Fundamentals of Novel Oxide/Semiconductor Interfaces held at the 2003 MRS Fall Meeting
  • Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers
    Chichibu SF; Sugiyama M; Nozaka T; Suzuki T; Onuma T; Nak...
    12th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 12)
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Teaching
2021-10 -- 2022-02Research in Applied Physics IIIAUniversity of Tsukuba.
2021-10 -- 2022-02Advanced Labs IUniversity of Tsukuba.
2021-10 -- 2022-02Research in Applied Physics IVAUniversity of Tsukuba.
2021-04 -- 2021-08Research in Applied Physics IIIBUniversity of Tsukuba.
2021-04 -- 2021-08Research in Applied Physics IBUniversity of Tsukuba.
2021-10 -- 2022-02Research in Applied Physics IAUniversity of Tsukuba.
2021-04 -- 2021-08Research in Applied Physics IIBUniversity of Tsukuba.
2021-04 -- 2021-08Research in Applied Physics VBUniversity of Tsukuba.
2021-10 -- 2022-02Research in Applied Physics IIBUniversity of Tsukuba.
2021-10 -- 2022-02Laboratory Exercise for Electronics and Quantum Effect Engineering AUniversity of Tsukuba.
more...

(Last updated: 2019-07-12)