現在地

Traore Aboulaye(トラオレ アボライ; Traore, Aboulaye)

face
所属
数理物質系
職名
助教
研究課題
格子歪による単一スピン状態の制御とフォノン媒介スピン間相互作用2020-10 -- 2021-03Ministry of Education, Culture, Sports, Science and Technology/科学研究費助成事業
職歴
2011-10 -- 2014-12Institut Neel Wide Bandgap Semiconductors Group Researcher (PhD candidate)
2015-05 -- 2018-03National institute of Advanced Industrial Science and Technology (AIST) Advanced Power Electronics Research Center Postdoctoral researcher
取得学位
2009-07Bachelor of ScienceUniversité Grenoble-Alpes
2011-07Master of ScienceUniversité Grenoble-Alpes
2014-12PhDUniversité Grenoble-Alpes
査読付き学術雑誌・国際会議論文
その他の論文・記事
著書
  • ダイヤモンドのデバイスプロセス開発と接合デバイス応用
    Makino Toshiharu; Kato Yukako; Umezawa Hitoshi; Traore Ab...
    会誌 NEW DIAMOND 第137号 (Japan New Diamond Forum), p.26, 2020-04
会議発表等
  • Thermal Stability of Inversion-Channel Diamond MOSFETs
    Traore Aboulaye; Kato Hiromitsu; Makino Toshiharu; Matsum...
    International Conference on New Diamond and Nano Carbons 2021/2021-06-07--2021-06-09
  • Photo-induced Conductivity Transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
    Traore Aboulaye; Gouveia Maria; Hironori Okumura; Mannequ...
    International Conference on Solid State Devices and Materials SSDM 2020/2020-09-27--2020-09-30
  • Temperature dependence of Diamond MOSFET transport properties
    Traore Aboulaye; Kato Hiromitsu; Makino Toshiharu; Matsum...
    International Conference on Solid State Devices and Materials SSDM 2019/2019-09-02--2019-09-05
  • Engineering and transport properties of diamond bipolar devices
    Traore Aboulaye; Makino Toshiharu; Kato Hiromitsu; Ogura ...
    2019 MRS Fall meeting & exhibit/2019-12-01--2019-12-06
  • Study of defects in diamond Schottky barrier diode by photocurrent spectroscopy
    Guo Junjie; Traore Aboulaye; Bin Abu Bakar Muhammad Hafiz...
    International Conference on Solid State Devices and Materials (SSDM)/2019-09-02--2019-09-05
  • Effect of annealing temperature on Al2O3/NAOS/Si MOS interface properties
    Wei Fu; Xufang Zhang; Hiroshi Umishio; Aboulaye Traore; ...
    第80回応用物理学会秋季学術講演会/2019-09-18--2019-09-21
  • Influence of the Annealing Temperature on ALD-Al2O3/NAOS/Si MOS Interface Properties
    Fu Wei; Zhang Xufang; Umishio Hiroshi; Traore Aboulaye; Y...
    The 29th International Confrence on Photovoltaic Sciene and Enginnering (PVSEC-29)/2019-11-4--2019-11-8
  • Temperature-dependent carrier lifetime measurements of diamond p-i-n diodes
    Traore Aboulaye
    Hasselt Diamond Workshop 2019 - SBDD XXIV/2019-03-13--2019-03-15
  • Simulated conductivity in compensated n- and p-type diamond
    Traore Aboulaye; Pernot J.
    17th Hasselt Diamond Workshop/2012-02
  • High current Schottky diode by thermally-induced full dopants ionization
    Traore Aboulaye; Muret P.; Fiori A.; Eon D.; Gheeraert E....
    International Conference on Diamond and Carbon Materials (ICDCM) 2013/2013-09-02--2013-09-05
  • Electrical properties of Zr/p-diamond Schottky diodes
    Traore Aboulaye; Muret P.; Fiori A.; Eon D.; Gheeraert E....
    19th Hasselt Diamond Workshop/2014-02
  • Zr metallization for diamond power Schottky diodes
    Traore Aboulaye; Muret P.; Fiori A.; Eon D.; Gheeraert E....
    2014 European Conference on Silicon Carbide and Related Materials ECSCRM/2014-09
  • Multi-step junction termination for high voltage diamond p-i-n diodes
    Traore Aboulaye; Makino Toshiharu; Nakajima Akira; Kato H...
    23rd Hasselt Diamond Workshop/2018-03-07--2018-03-09
  • Reverse-recovery of diamond p-i-n diodes
    Traore Aboulaye; Nakajima Akira; Makino Toshiharu; Kuwaba...
    International Seminar on Power Semiconductors (ISPS 2016)/2016-08-31--2016-09-02
  • Dynamic properties of diamond high voltage p-i-n diodes
    Traore Aboulaye; Nakajima Akira; Makino Toshiharu; Kuwaba...
    2016 International Conference on Solid State Devices and Materials (SSDM 2016)/2016-09-26--2016-09-29
  • OCVD法によるダイヤモンドp-i-nダイオードのキャリア寿命測定
    Traore Aboulaye
    78th JSAP Autumn Meeting, 2017/2017-09-05--2017-09-08
  • Edge termination technique for high voltage diamond p-i-n diodes
    Traore Aboulaye; Makino Toshiharu; Kato Hiromitsu; Ogura ...
    65th JSAP Spring Meeting, 2018/2018-03-17--2018-03-20
知的財産権
  • Procédé de fabrication d'une diode schottky sur un substrat en diamant
    Traore Aboulaye; Eon David; Gheeraert Etienne; Pernot Julien
担当授業科目
2019-04 -- 2020-01電子・量子工学専攻実験テキスト/B半導体の電気伝導度とホール効果理工学群 応用理工学類 電子・量子工学主専攻実験テキスト
2018-04 -- 2019-01電子・量子工学専攻実験テキスト/B半導体の電気伝導度とホール効果理工学群 応用理工学類 電子・量子工学主専攻実験テキスト

(最終更新日: 2021-06-24)