現在地

Traore Aboulaye(トラオレ アボライ; Traore, Aboulaye)

face
所属
数理物質系
職名
助教
職歴
2011-10 -- 2014-12Institut Neel Wide Bandgap Semiconductors Group Researcher (PhD candidate)
2015-05 -- 2018-03National institute of Advanced Industrial Science and Technology (AIST) Advanced Power Electronics Research Center Postdoctoral researcher
取得学位
2009-07Bachelor of ScienceUniversité Grenoble-Alpes
2011-07Master of ScienceUniversité Grenoble-Alpes
2014-12PhDUniversité Grenoble-Alpes
査読付き学術雑誌・国際会議論文
会議発表等
  • Temperature-dependent carrier lifetime measurements of diamond p-i-n diodes
    Traore Aboulaye
    Hasselt Diamond Workshop 2019 - SBDD XXIV/2019-03-13--2019-03-15
  • Simulated conductivity in compensated n- and p-type diamond
    Traore Aboulaye; Pernot J.
    17th Hasselt Diamond Workshop/2012-02
  • High current Schottky diode by thermally-induced full dopants ionization
    Traore Aboulaye; Muret P.; Fiori A.; Eon D.; Gheeraert E....
    International Conference on Diamond and Carbon Materials (ICDCM) 2013/2013-09-02--2013-09-05
  • Electrical properties of Zr/p-diamond Schottky diodes
    Traore Aboulaye; Muret P.; Fiori A.; Eon D.; Gheeraert E....
    19th Hasselt Diamond Workshop/2014-02
  • Zr metallization for diamond power Schottky diodes
    Traore Aboulaye; Muret P.; Fiori A.; Eon D.; Gheeraert E....
    2014 European Conference on Silicon Carbide and Related Materials ECSCRM/2014-09
  • Multi-step junction termination for high voltage diamond p-i-n diodes
    Traore Aboulaye; Makino Toshiharu; Nakajima Akira; Kato H...
    23rd Hasselt Diamond Workshop/2018-03-07--2018-03-09
  • Reverse-recovery of diamond p-i-n diodes
    Traore Aboulaye; Nakajima Akira; Makino Toshiharu; Kuwaba...
    International Seminar on Power Semiconductors (ISPS 2016)/2016-08-31--2016-09-02
  • Dynamic properties of diamond high voltage p-i-n diodes
    Traore Aboulaye; Nakajima Akira; Makino Toshiharu; Kuwaba...
    2016 International Conference on Solid State Devices and Materials (SSDM 2016)/2016-09-26--2016-09-29
  • OCVD法によるダイヤモンドp-i-nダイオードのキャリア寿命測定
    Traore Aboulaye
    78th JSAP Autumn Meeting, 2017/2017-09-05--2017-09-08
  • Edge termination technique for high voltage diamond p-i-n diodes
    Traore Aboulaye; Makino Toshiharu; Kato Hiromitsu; Ogura ...
    65th JSAP Spring Meeting, 2018/2018-03-17--2018-03-20
知的財産権
  • Procédé de fabrication d'une diode schottky sur un substrat en diamant
    Traore Aboulaye; Eon David; Gheeraert Etienne; Pernot Julien
担当授業科目
2019-04 -- 2020-01電子・量子工学専攻実験A理工学群 応用理工学類 電子・量子工学主専攻
2018-04 -- 2019-01電子・量子工学専攻実験A理工学群 応用理工学類 電子・量子工学主専攻

(最終更新日: 2019-07-25)