Traore Aboulaye(トラオレ アボライ)

所属

数理物質系

職名

助教

研究課題

格子歪による単一スピン状態の制御とフォノン媒介スピン間相互作用	2020-10 -- 2024-03	Shinji Kuroda	Ministry of Education, Culture, Sports, Science and Technology/科学研究費助成事業

職歴

2011-10 -- 2014-12	Institut NeelWide Bandgap Semiconductors GroupResearcher (PhD candidate)
2015-05 -- 2018-03	National institute of Advanced Industrial Science and Technology (AIST)Advanced Power Electronics Research CenterPostdoctoral researcher

取得学位

2009-07	Bachelor of Science	Université Grenoble-Alpes
2011-07	Master of Science	Université Grenoble-Alpes
2014-12	PhD	Université Grenoble-Alpes

論文

• Thermal catalytic etching of diamond by double-metal layers
  Tran D.D.; Mannequin C.; Bonvalot M.; Traore Aboulaye...
  DIAMOND AND RELATED MATERIALS/p.111075, 2024-04
• Electrical properties of vertical Cu₂O/β-Ga₂O₃ (001) p-n diodes
  Jia Yun; Sato Sora; Traore Aboulaye; Morita Ryo; Broc...
  AIP ADVANCES/13(10), 2023-10-01
• Electronic Structure of Orthorhombic Bi4V2O11 and Role of Gap States in Photoelectrochemical Water Splitting
  Liu Jiaqi; Ozawa Kenichi; Uezono Namiki; Pawar Sachin...
  The Journal of Physical Chemistry C/127(23)/pp.11195-11203, 2023-06
• Surface defects related to polishing cycle in ß-Ga2O3 crystals grown by floating zone
  Perrier Coralie; Traore Aboulaye; Ito Toshimitsu; Umez...
  APPLIED PHYSICS LETTERS/122(22)/pp.222105-222110, 2023
• Transient photocapacitance spectroscopy of deep-levels in (001) β-Ga₂O₃
  Florena F Fenda; Aboulaye Traore; SAKURAI TAKEAKI
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A/41(3), 2023-03
• Photoconductivity buildup and decay kinetics in unintentionally doped β-Ga2O3
  Aboulaye Traore; Okumura Hironori; Sakurai Takeaki
  JAPANESE JOURNAL OF APPLIED PHYSICS/61(9), 2022-08
• Optically detected magnetic resonance of nitrogen-vacancy centers in vertical diamond Schottky diodes
  Bakar Muhammad Hafiz bin Abu; Traore Aboulaye; Guo Junji...
  Japanese Journal of Applied Physics/61(SC:C)/p.SC1061, 2022-02
• Photo-induced conductivity transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
  Traore Aboulaye; Gouveia Maria; Okumura Hironori; Mannequ...
  Japanese Journal of Applied Physics/60/pp.SBBD15-SBBD15-4, 2021-02
• Carrier transport mechanism of diamond p(+)-n junction at low temperature using Schottky-pn junction structure
  Karasawa Ayumu; Makino Toshiharu; Traore Aboulaye; Kato ...
  JAPANESE JOURNAL OF APPLIED PHYSICS/60(3), 2021-03
• Study of ion-implanted nitrogen related defects in diamond Schottky barrier diode by transient photocapacitance and photoluminescence spectroscopy
  Guo Junjie; Traore Aboulaye; Ogura Masahiko; Abu Bakar...
  JAPANESE JOURNAL OF APPLIED PHYSICS/60(SB::B), 2021-02
• Comparison of Experimental Data and TCAD Simulation of Diamond-Based Particle Detector and Proposal of 3D-Contact Diamond Detector
  Kholili M. J.; Nishiguchi H.; Tanaka M. M.; Hara A.; Shim...
  日本物理学会講演概要集/73/pp.93-93, 2018
  
  CiNii
• Temperature dependence of Diamond MOSFET transport properties
  Traore Aboulaye; Kato Hiromitsu; Makino Toshiharu; Matsum...
  Japanese Journal of Applied Physics/59, 2020-03
• Study of defects in diamond Schottky barrier diode by photocurrent spectroscopy
  Guo Junjie; Traore Aboulaye; Bin Abu Bakar Muhammad Hafi...
  Japanese Journal of Applied Physics/59(SG), 2020-02
• Effect of annealing temperature on Al2O3/NAOS/Si MOS interface properties
  Wei Fu; Xufang Zhang; Hiroshi Umishio; Aboulaye Traore; 矢...
  第80回応用物理学会秋季学術講演会　講演予稿集/p.13-228, 2019-09
• Influence of the Annealing Temperature on ALD-Al2O3/NAOS/Si MOS Interface Properties
  Fu Wei; Zhang Xufang; Umishio Hiroshi; Traore Aboulaye; Y...
  Technical Digest of The 29th International Confrence on Photovoltaic Sciene and Enginnering (PVSEC-29)/pp.1708-1710, 2019-11
• Boron-deuterium complexes in diamond: How inhomogeneity leads to incorrect carrier type identification
  Kumar A.; Pernot J.; Omnès F.; Muret P.; Traore Aboulaye...
  <i>Journal of Applied Physics</i>/110/p.0337718, 2011-08
• Zr/oxidized diamond interface for high power Schottky diodes
  Traore Aboulaye; Muret P.; Fiori A.; Eon D.; Gheeraert E...
  <i>Applied Physics Letters</i>/104/p.052105, 2014-02
• Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior
  Piñero J.C.; Araújo D.; Traore Aboulaye; Chicot G.; Maréc...
  Physica status solidi (a)/211(10)/pp.2367-2371, 2014-06
• Potential barrier heights at metal on oxygen-terminated diamond interfaces
  Muret P.; Traore Aboulaye; Maréchal A.; Eon D.; Pernot J...
  <i>Journal of Applied Physics</i>/118/p.204505, 2015-11
• Electrical activity of (100) n-type diamond with full donor site incorporation of phosphorus: Electrical activity of (100) n-type diamond
  Pinault‐Thaury Marie‐Amandine; Stenger Ingrid; Jomard Fr...
  Physica status solidi (a)/212(11)/pp.2454-2459, 2015-05
• Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality
  Piñero J.C.; Araújo D.; Fiori A.; Traore Aboulaye; Villar...
  Applied Surface Science/395/pp.200-207, 2016-04
• Recent progress on diamond Schottky diode
  Eon David; Traore Aboulaye; Pernot Julien; Gheeraert Eti...
  28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016-07
• Effect of n- and p-type doping concentrations and compensation on the electrical properties of semiconducting diamond: Electrical properties of semiconducting diamond
  Traore Aboulaye; Koizumi Satoshi; Pernot Julien
  Physica status solidi (a)/213(8)/pp.2036-2043, 2016-07
• Dynamic properties of diamond high voltage p-i-n diodes
  Traore Aboulaye; Nakajima Akira; Makino Toshiharu; Kuwaba...
  <i>Japanese Journal of Applied Physics</i>/56/p.04CR14, 2017-03
• Estimation of Inductively Coupled Plasma Etching Damage of Boron-Doped Diamond Using X-Ray Photoelectron Spectroscopy
  Kato Yukako; Kawashima Hiroyuki; Makino Toshiharu; Ogura ...
  Physica Status Solidi A/214(11)/p.1700233, 2017-10
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著書

• ダイヤモンドのデバイスプロセス開発と接合デバイス応用
  Makino Toshiharu; Kato Yukako; Umezawa Hitoshi; Traore A...
  会誌　NEW DIAMOND　第137号 (Japan New Diamond Forum)/p.26, 2020-04

会議発表等

• Electrical properties of single-crystal p-Cu2O/n-Ga2O3 heterojunction diodes
  Jia Yun; Traore Aboulaye; Sora Sato; Islam Muhammad Moni...
  The 84th JSAP Autumn Meeting 2023/2023-09-19--2023-09-23
• Traps in p-Cu2O/n-Ga2O3 heterojunction diodes studied by deep level transient spectroscopy
  Jia Yun; Traore Aboulaye; Islam Muhammad Monirul; Sakurai...
  第71回応用物理学会春季学術講演会/2024-03-22--2024-03-25
• β-(AlGa)2O3/Ga2O3 heterostructure by dynamic capacitance dispersion technique
  Fenfen Fenda Florena; Traore Aboulaye; Okumura Hirinori; ...
  第71回応用物理学会春季学術講演会/2024-03-22--2024-03-25
• β-(Al0.17Ga0.83)2O3電界効果トランジスタ(MESFET)の電気的特性評価​
  Morita Ryo; Traore Aboulaye; Okumura Hirinori; Fenfen fe...
  第71回応用物理学会春季学術講演会/2024-03-22--2024-03-25
• Transient Photocapacitance Spectroscopy of ​ Deep-levels in (001) β-Ga2O3​
  Florena Fenfen Fenda; Traore Aboulaye; Sakurai Takeaki
  第70回応用物理学会春季学術講演会/2023-03-15--2023-03-18
• Deep electron traps in ß-Ga2O3 crystal grown by floating zone
  Traore Aboulaye; Perrier Coralie; Mzali Yosra; Ito Toshi...
  45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 16th EXMATEC ‐ Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE EXMATEC 2022)/2022-05-03--2022-05-06
• ダイヤモンドSchottky-pnダイオードを用いたp+-n接合での低温におけるキャリア伝導機構
  唐澤歩睦; SAKURAI TAKEAKI; Aboulaye Traore; 加藤 宙光; 小倉 政彦; 加藤 ...
  第81回応用物理学会秋季学術講演会/2020-09-08--2020-09-11
• Study of ion-implanted-nitrogen related defects in diamond by transient photocapacitance spectroscopy
  Guo J.; SAKURAI TAKEAKI; Aboulaye Traore; Ogura M.; Bakar...
  第81回応用物理学会秋季学術講演会/2020-09-08--2020-09-11
• Study of ion-implanted nitrogen related defects in diamond Schottky barrier diode by transient photocapacitance and photoluminescence spectroscopy
  Guo J.; SAKURAI TAKEAKI; Aboulaye Traore; Ogura M.; Bakar...
  2020 International Conference on Solid State Devices and Materials (SSDM 2020)/2020-09-27--2020-09-30
• Thermal Stability of Inversion-Channel Diamond MOSFETs
  Traore Aboulaye; Kato Hiromitsu; Makino Toshiharu; Matsum...
  International Conference on New Diamond and Nano Carbons 2021/2021-06-07--2021-06-09
• Photo-induced Conductivity Transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
  Traore Aboulaye; Gouveia Maria; Hironori Okumura; Mannequ...
  2020 International Conference on Solid State Devices and Materials SSDM 2020/2020-09-27--2020-09-30
• Temperature dependence of Diamond MOSFET transport properties
  Traore Aboulaye; Kato Hiromitsu; Makino Toshiharu; Matsum...
  International Conference on Solid State Devices and Materials SSDM 2019/2019-09-02--2019-09-05
• Engineering and transport properties of diamond bipolar devices
  Traore Aboulaye; Makino Toshiharu; Kato Hiromitsu; Ogura ...
  2019 MRS Fall meeting & exhibit/2019-12-01--2019-12-06
• Study of defects in diamond Schottky barrier diode by photocurrent spectroscopy
  Guo Junjie; Traore Aboulaye; Bin Abu Bakar Muhammad Ha...
  International Conference on Solid State Devices and Materials (SSDM)/2019-09-02--2019-09-05
• Effect of annealing temperature on Al2O3/NAOS/Si MOS interface properties
  Wei Fu; Xufang Zhang; Hiroshi Umishio; Aboulaye Traore; 矢...
  第80回応用物理学会秋季学術講演会/2019-09-18--2019-09-21
• Influence of the Annealing Temperature on ALD-Al2O3/NAOS/Si MOS Interface Properties
  Fu Wei; Zhang Xufang; Umishio Hiroshi; Traore Aboulaye; Y...
  The 29th International Confrence on Photovoltaic Sciene and Enginnering (PVSEC-29)/2019-11-4--2019-11-8
• Temperature-dependent carrier lifetime measurements of diamond p-i-n diodes
  Traore Aboulaye
  Hasselt Diamond Workshop 2019 - SBDD XXIV/2019-03-13--2019-03-15
• Simulated conductivity in compensated n- and p-type diamond
  Traore Aboulaye; Pernot J.
  17th Hasselt Diamond Workshop/2012-02
• High current Schottky diode by thermally-induced full dopants ionization
  Traore Aboulaye; Muret P.; Fiori A.; Eon D.; Gheeraert E...
  International Conference on Diamond and Carbon Materials (ICDCM) 2013/2013-09-02--2013-09-05
• Electrical properties of Zr/p-diamond Schottky diodes
  Traore Aboulaye; Muret P.; Fiori A.; Eon D.; Gheeraert E...
  19th Hasselt Diamond Workshop/2014-02
• Zr metallization for diamond power Schottky diodes
  Traore Aboulaye; Muret P.; Fiori A.; Eon D.; Gheeraert E...
  2014 European Conference on Silicon Carbide and Related Materials ECSCRM/2014-09
• Multi-step junction termination for high voltage diamond p-i-n diodes
  Traore Aboulaye; Makino Toshiharu; Nakajima Akira; Kato ...
  23rd Hasselt Diamond Workshop/2018-03-07--2018-03-09
• Reverse-recovery of diamond p-i-n diodes
  Traore Aboulaye; Nakajima Akira; Makino Toshiharu; Kuwaba...
  International Seminar on Power Semiconductors (ISPS 2016)/2016-08-31--2016-09-02
• Dynamic properties of diamond high voltage p-i-n diodes
  Traore Aboulaye; Nakajima Akira; Makino Toshiharu; Kuwaba...
  2016 International Conference on Solid State Devices and Materials (SSDM 2016)/2016-09-26--2016-09-29
• OCVD法によるダイヤモンドp-i-nダイオードのキャリア寿命測定
  Traore Aboulaye
  78th JSAP Autumn Meeting, 2017/2017-09-05--2017-09-08
• さらに表示...

知的財産権

• Procédé de fabrication d'une diode schottky sur un substrat en diamant
  Traore Aboulaye; Eon David; Gheeraert Etienne; Pernot Ju...

担当授業科目

2023-10 -- 2024-02	電子・物理工学特別研究IIIA	筑波大学
2023-11 -- 2024-02	光・量子半導体工学II	筑波大学
2023-10 -- 2024-02	電子・物理工学特別研究IA	筑波大学
2023-04 -- 2023-08	電子・物理工学特別研究IIB	筑波大学
2023-10 -- 2024-02	Advanced Labs I	筑波大学
2023-04 -- 2023-08	電子・物理工学特別研究IVB	筑波大学
2023-04 -- 2023-08	電子・物理工学特別研究VB	筑波大学
2023-10 -- 2024-02	電子・物理工学特別研究IVA	筑波大学
2023-04 -- 2023-08	電子・物理工学特別研究IA	筑波大学
2023-10 -- 2024-02	電子・物理工学特別研究IIIB	筑波大学
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(最終更新日: 2024-04-18)