梅田 享英(ウメダ タカヒデ)

研究者情報全体を表示

論文

• Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC
  Son NT; Henry A; Isoya J; Katagiri M; Umeda T; Gali A; Ja...
  PHYSICAL REVIEW B/73(7)/pp.0-0, 2006-02
• Divacancy in 4H-SiC
  Son NT; Carlsson P; ul Hassan; Janzen E; Umeda T; Isoya ...
  PHYSICAL REVIEW LETTERS/96(5)/pp.0-0, 2006-02
• Identification of the carbon antisite-vacancy pair in 4H-SiC
  Umeda T; Son NT; Isoya J; Janzen E; Ohshima T; Morishita ...
  PHYSICAL REVIEW LETTERS/96(14)/pp.0-0, 2006-04
• Pulsed EPR studies of phosphorus shallow donors in diamond and SiC
  Isoya J; Katagiri M; Umeda T; Koizumi S; Kanda H; Son NT; Henry...
  PHYSICA B-CONDENSED MATTER/376/pp.358-361, 2006-04
• Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories
  Umeda T.; Okonogi K.; Ohyu K.; Tsukada S.; Hamada K.; Fuj...
  APPLIED PHYSICS LETTERS/88(25)/pp.0-0, 2006-06