上殿 明良(ウエドノ アキラ)
- 会議発表等
- Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams
Uedono A.; Egger W.; Koschine T.; Hugenschmidt C.; Dickma...
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS)/2019-09-02--2019-09-06 - Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes
Shima Kohei; Kojima Kazunobu; Uedono Akira; Chichibu ...
19th International Workshop on Junction Technologies (IWJT)/2019-06-06--2019-06-07 - Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy
Inoue Fumihiro; Peng Lan; Iacovo Serena; Nagano Fuya; ...
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)/2019-05-21--2019-05-25 - Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures
Chichibu Shigefusa F.; Shima Kohei; Kojima Kazunobu; T...
International Workshop on Bulk Nitride Semiconductors (IWN)/2018-11-11--2018-11-16 - Two-dimensional mapping of hydrogen and other elements in materials with microbeam-based transmission ERDA and PIXE
Yamazaki A.; Naramoto H.; Sasa K.; Ishii S.; Tomita S.; S...
23rd International Conference on Ion Beam Analysis (IBA)/2017-10-08--2017-10-13 - 陽電子消滅によるCIGS薄膜中の空孔型欠陥の検出
Akira Uedono; Islam Muhammad Monirul; Sakurai Takeaki; ka...
2018年第79応用物理学会 秋季学術講演会/2018-09-18--2018-09-21 - Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films
Iwashita Shinya; Denpoh Kazuki; Kagaya Munehito; Kikuc...
International Thin Films Conference (TACT)/2017-10-15--2017-10-18 - 筑波大学タンデム加速器施設UTTACの現状（2016年度）
森口 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場 大一郎; 笹 公和; 上殿 明良
第30回タンデム加速器及びその周辺技術の研究会/2017-07-06--2017-07-07 - AIN metal-semiconductor field-effect transistors using Si-ion implantation
Okumura Hironori; Suihkonen Sami; Lemettinen Jori; Ued...
International Conference on Solid State Devices and Materials (SSDM)/2017-09-19--2017-09-22 - Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam
Koike Kazuto; Yano Mitsuaki; Gonda Shun-ichi; Uedono ...
29th International Conference on Defects in Semiconductors (ICDS)/2017-07-31--2017-08-04 - The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
Chichibu S. F.; Uedono A.; Kojima K.; Ikeda H.; Fujito K...
29th International Conference on Defects in Semiconductors (ICDS)/2017-07-31--2017-08-04 - Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams
Uedono Akira; Takashima Shinya; Edo Masaharu; Ueno Ka...
12th International Conference on Optics of Surfaces and Interfaces (OSI)/2017-06-25--2017-06-30 - Point defects in GaN and related group-III nitrides studied by means of positron annihilation
Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
Conference on Gallium Nitride Materials and Devices VI/2011-01-24--2011-01-27 - Point defects in GaN and related group-III nitrides studied by means of positron annihilation
Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
Conference on Gallium Nitride Materials and Devices VI/2011-01-24--2011-01-27 - Application of positron annihilation technique to front and backend processes for modern LSI devices
Uedono A.; Ishibashi S.; Oshima N.; Ohdaira T.; Suzuki R.
12th International Workshop on Slow Positron Beam Techniques/2010-08-01--2010-08-06 - Point defects in group-III nitride semiconductors studied by positron annihilation
Uedono A.; Ishibashi S.; Ohdaira T.; Suzuki R.
2nd International Symposium on Growth of III Nitrides (ISGN-2) - Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams
Uedono A.; Inoue N.; Hayashi Y.; Eguchi K.; Nakamura T.; ...
IEEE International Interconnect Technology Conference - Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films during Electrical Stress Application
Hasunuma Ryu; Tamura Chihiro; Nomura Tsuyoshi; Kikuchi Y...
IEEE International Electron Devices Meeting (IEDM 2009) - Point defects in thin HfAIO(x) films probed by monoenergetic positron beams
Uedono A; Mitsuhashi R; Horiuchi A; Torii K; Yamabe K; Ya...
Symposium on Fundamentals of Novel Oxide/Semiconductor Interfaces held at the 2003 MRS Fall Meeting - Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers
Chichibu SF; Sugiyama M; Nozaka T; Suzuki T; Onuma T; Nak...
12th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 12) - Characterization of Hf0.3Al0.7Ox fabricated by atomic-layer-deposition technique using monoenergetic positron beams
Uedono A; Goto M; Higuchi K; Shiraishi K; Yamabe K; Kitaj...
International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4) - Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE
Shimizu Y; Kobayashi N; Uedono A; Okada Y
31st International Symposium on Compound Semiconductors - Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications
Shimizu Yukiko; Miyashita Naoya; Mura Yusuke; Uedono Aki...
4th World Conference on Photovoltaic Energy Conversion
- Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams