上殿 明良(ウエドノ アキラ)
- 論文
- Open Spaces in the Subsurface Region of Polyethylene Probed by a Monoenergetic Positron Beams
A. Uedono; R. Suzuki; T. Ohdaira; T. Uozumi; M. Ban; M. ...
J. Polym. Sci. B 36, 2597-2605 (1998)./36/p.2597-2605, 1998-01 - Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
R. Suzuki; T. Ohdaira; A. Uedono; Y.K. Cho; S. Yoshida; Y...
Jpn. J. Appl. Phys. 37, 4636-4643 (1998)./37/p.4636-4643, 1998-01 - Characterization of Vacancy-Type Defects and Phosphorus-Donors Introduced in 6H-SiC by Ion Implantation
T. Ohshima; A. Uedono; K. Abe; H. Itoh; Y. Aoki; M. Yosh...
Appl. Phys. A 67, 407-412 (1998)./67/p.407-412, 1998-01 - イオン注入及び注入後熱処理した３C-SiC中の残留欠陥の研究
大島武; 伊藤久義; 上殿明良; 鈴木良一; 石田夕起; 高橋徹夫; 吉川正人; 児島一聡; 大平俊之; 梨山勇; 谷川庄一郎; 奥村元...
電子技術総合研究所彙報 62, 31-38 (1999)./62,/p.31-38, 1999-01 - Defects in Synthesized and Natural Diamond Probed by Positron Annihilation
A. Uedono; S. Fujii; N. Morishita; H. Itoh; S. Tanigawa; ...
J. Phys. Condens. Matter. 11, 4109-4122 (1999)./11/p.4109-4122, 1999-01 - Annealing Behaviors of Defects in Electron Irradiated Diamond Probed by Positron Annihilation
A. Uedono; K. Mori; N. Morishita; H. Itoh; S. Tanigawa S...
J. Phys. Condens. Matter. 11, 4925-4934 (1999)./11/p.4925-4934, 1999-01 - Open Spaces and Molecular Motions of Acrylic Epoxy Based Network Polymers Probed by Positron Annihilation
A. Uedono; W. Aiko; Y. Yamamoto; T. Nakamichi; S. Tanigawa
J. Polym. Sci. B 37, 2875-2880 (1999)./37/p.2875-2880, 1999-01 - Defects in p+-Gate Metal-Oxide-Semiconductor Structures Probed by Monoenergetic Positron Beams
A. Uedono; M. Hiketa; S. Tanigawa; T. Kitano; T. Kubota; ...
J. Appl. Phys. 86, 5385-5391 (1999)./86/p.5385-5391, 1999-01 - Oxygen-Related Defects in O+-implanted 6H-SiC Studied by a Monoenergetic Positron Beam
A. Uedono; S. Tanigawa; T. Ohshima; H. Itoh; Y. Aoki; M. ...
J. Appl. Phys. 86, 5392-5398 (1999)./86/p.5392-5398, 1999-01 - Relationship Between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
T. Ohshima; A. Uedono; H. Itoh; M. Yoshikawa; K. Kojima; ...
Materials Science Forum/338/342/p.857-860, 2000-01 - Open Spaces and Relaxation Processes in the Subsurface Region of Polypropylene Probed by Monoenergetic Positron Beams
A. Uedono; R. Suzuki; T. Ohdaira; T. Mikado; S. Tanigawa...
J. Polym. Sci. B 38, 101-107 (2000)./38/p.101-107, 2000-01 - Positron Annihilation in Silicon in Thermal Equilibrium at High Temperature
A. Uedono; M. Watanabe; S. Takasu; T. Sabato; S. Tanigawa
J. Phys. Condens. Matter. 12, 719-728 (2000)./12/p.719-728, 2000-01 - Annealing Properties of Defects During Si-on-Insulator Fabrication by Low-Dose Oxygen Implantation Studied by Monoenergetic Positron Beams
A. Uedono; S. Tanigawa; A. Ogura; H. Ono; R. Suzuki; T. ...
J. Appl. Phys. 87, 1659-1665 (2000)./87/p.1659-1665, 2000-01 - Crystallization of an Amorphous Layer in P+-implanted 6H-SiC Studied by Monoenergetic Positron Beams
A. Uedono; S. Tanigawa; T. Ohshima; H. Itoh; M. Yoshikaw...
J. Appl. Phys. 87, 4119-4125 (2000)./87/p.4119-4125, 2000-01 - Oxygen-Related Defects Introduced by As+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
A. Uedono; M. Muramatsu; T. Ubukata; H. Tanino; S. Tanig...
Jpn. J. Appl. Phys. 39, 6126-6129 (2000)./39/p.6126-6129, 2000-01 - Low Temperature Buffer Growth for Modulation Doped SiGe/Ge/SiGe Heterostructures with High Hole Mobility
T. Ueno; T. Irisawa; Y. Shiraki; A. Uedono; S. Tanigawa
Thin Solid Films 369, 320-323 (2000)./369/p.320-323, 2000-01 - Positron Annihilation Studies of Defects in Ion Implanted Palladium
H. Abe; A. Uedono; H. Uchida; A. Komatsu; S. Okada; H. Itoh
Materials Science Forum/363/365/p.156-158, 2001-01 - Temperature and Irradiation Effects on Positronium Formation in Polycarbonate
Z.Q. Chen; T. Suzuki; A. Uedono; S. Tanigawa; Y. Ito
Materials Science Forum/363/365/p.297-299, 2001-01 - Positron Annihilation in Si and Si-Related Materials in Thermal Equilibrium at High Temperature
) A. Uedono; M. Watanabe; T. Ichihashi; S. Takasu; M. Mu...
Materials Science Forum/363/365/p.472-474, 2001-01 - Characterization of Low Temperature Grown Si Layer for SiGe Pseudo-Substrates by Positron Annihilation Spectroscopy
T. Ueno; T. Irisawa; Y. Shiraki; A. Uedono; S. Tanigawa; ...
J. Crys. Growth 227-228, 761-765 (2001)./p.761-765, 2001-01 - Positron Annihilation Study of Vacancy-Type Defects in Silicon Carbide Co-Implanted with Aluminum and Carbon Ions
T. Ohshima; A. Uedono; H. Abe; Z.Q. Chen; H. Itoh; M. Yo...
Physica B 308-310, 652-655 (2001)./308-310/p.652-655, 2001-01 - Open Spaces and Molecular Motions in Carbon-Black- and Silica-Loaded SBR Investigated Using Positron Annihilation
A. Uedono; S. Fukui; M. Muramatsu; T. Ubukata; S. Kimura...
J. Polym. Sci. B 39, 835-842 (2001)./39/p.835-842, 2001-01 - A Study of Vacancy-Type Defects Introduced by the Carburization of Si by Monoenergetic Positron Beams
A. Uedono; M. Muramatsu; T. Ubukata; M. Watanabe; T. Ich...
J. Appl. Phys. 89, 3606-3610 (2001)./89/p.3606-3610, 2001-01 - Evaluation of SOI Substrates by Positron Annihilation
A. Uedono; A. Ogura; S. Tanigawa
Jpn. J. Appl. Phys. 40, 2903-2906 (2001)./40/p.2903-2906, 2001-01 - Study of Defects in GaN Grown by the Two-Flow Metalorganic Chemical Vapor Deposition Technique Using Monoenergetic Positron Beams
A. Uedono; S.F. Chichibu; Z.Q. Chen; M. Sumiya; R. Suzuk...
J. Appl. Phys. 90, 181-186 (2001)./90/p.181-186, 2001-01 - さらに表示...
- Open Spaces in the Subsurface Region of Polyethylene Probed by a Monoenergetic Positron Beams