上殿 明良(ウエドノ アキラ)
- 論文
- Temperature and Irradiation Effects on Positronium Formation in Polycarbonate
Z.Q. Chen; T. Suzuki; A. Uedono; S. Tanigawa; Y. Ito
Materials Science Forum/363/365/p.297-299, 2001-01 - Positron Annihilation in Si and Si-Related Materials in Thermal Equilibrium at High Temperature
) A. Uedono; M. Watanabe; T. Ichihashi; S. Takasu; M. Mu...
Materials Science Forum/363/365/p.472-474, 2001-01 - Characterization of Low Temperature Grown Si Layer for SiGe Pseudo-Substrates by Positron Annihilation Spectroscopy
T. Ueno; T. Irisawa; Y. Shiraki; A. Uedono; S. Tanigawa; ...
J. Crys. Growth 227-228, 761-765 (2001)./p.761-765, 2001-01 - Positron Annihilation Study of Vacancy-Type Defects in Silicon Carbide Co-Implanted with Aluminum and Carbon Ions
T. Ohshima; A. Uedono; H. Abe; Z.Q. Chen; H. Itoh; M. Yo...
Physica B 308-310, 652-655 (2001)./308-310/p.652-655, 2001-01 - Open Spaces and Molecular Motions in Carbon-Black- and Silica-Loaded SBR Investigated Using Positron Annihilation
A. Uedono; S. Fukui; M. Muramatsu; T. Ubukata; S. Kimura...
J. Polym. Sci. B 39, 835-842 (2001)./39/p.835-842, 2001-01 - A Study of Vacancy-Type Defects Introduced by the Carburization of Si by Monoenergetic Positron Beams
A. Uedono; M. Muramatsu; T. Ubukata; M. Watanabe; T. Ich...
J. Appl. Phys. 89, 3606-3610 (2001)./89/p.3606-3610, 2001-01 - Evaluation of SOI Substrates by Positron Annihilation
A. Uedono; A. Ogura; S. Tanigawa
Jpn. J. Appl. Phys. 40, 2903-2906 (2001)./40/p.2903-2906, 2001-01 - Study of Defects in GaN Grown by the Two-Flow Metalorganic Chemical Vapor Deposition Technique Using Monoenergetic Positron Beams
A. Uedono; S.F. Chichibu; Z.Q. Chen; M. Sumiya; R. Suzuk...
J. Appl. Phys. 90, 181-186 (2001)./90/p.181-186, 2001-01 - Free Volume in Polycarbonate Studied by Positron Annihilation: Effects of Free Radicals and Trapped Electrons on Positronium Formation
Z.Q. Chen; T. Suzuki; K. Kondo; A. Uedono; Y. Ito
Jpn. J. Appl. Phys. 40, 5036-5040 (2001)./40/p.5036-5040, 2001-01 - Nanoporous Structure of Methyl-Silsesquioxane Films Using Monoenergetic Positron Beams
A. Uedono; Z.Q. Chen; R. Suzuki; T. Ohdaira; T. Mikado; S...
J. Appl. Phys. 90, 2498-2503 (2001)./90/p.2498-2503, 2001-01 - Oxygen-Related Defects in Low-Dose Separation-by-implanted Oxygen Wafers Probed by Monoenergetic Positron Beams
A. Uedono; Z.Q. Chen; A. Ogura; H. Ono; R. Suzuki; T. Oh...
J. Appl. Phys. 90, 6026-6031 (2001)./90/p.6026-6031, 2001-01 - Vacancy-Type Defects in BaTiO3/SrTiO3 Structures Probed by Monoenergetic Positron Beams
A. Uedono; K. Shimoyama; M. Kiyohara; Z.Q. Chen; K. Yama...
J. Appl. Phys. 91, 5307-5312 (2001)./91/p.5307-5312, 2001-01 - Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy
S.F. Chichibu; A. Setoguchi; A. Uedono; K. Yoshimura; M. ...
Appl. Phys. Lett. 78, 28-30 (2001)./78/p.28-30, 2001-01 - Oxygen-Related Defects in Silicon-On-Insulator Wafers Probed Monoenergetic Positron Beams
A. Uedono; H. Yamamoto; A. Nakano; A. Ogura; T. Ohdaira; ...
2002 IEEE Int. SOI Conf. Proc. p.196-197./p.196-197., 2002-01 - Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
Z.Q. Chen; A. Uedono; Y.Y. Li; J.S. He
Jpn. J. Appl. Phys. 41, 2146-2149 (2002)./41/p.2146-2149, 2002-01 - Defects in Silicon-on-Insulator Wafers and their hydrogen interaction Studied by Monoenergetic Positron Beams
A. Uedono; Z.Q. Chen; A. Ogura; R. Suzuki; T. Ohdaira; T....
J. Appl. Phys. 91, 6488-6492 (2002)./91/p.6488-6492, 2002-01 - Defects-Induced Volume Deviations in ZnSe
H. Ebe; Z.Q. Chen; A. Uedono; B.P. Zhang; Y. Segawa; K. ...
J. Cryst. Growth 237, 1566-1569 (2002)./237/p.1566-1569, 2002-01 - Positron Annihilation in SiO2-Si Studied by a Pulsed Slow Positron Beam
R. Suzuki; T. Ohdaira; A. Uedono; Y. Kobayashi
Appl. Surf. Sci. 194, 89-96 (2002)./194/p.89-96, 2002-01 - Oxygen-Related Defects and Their Annealing Behavior in Low-Dose Separation-by-Implanted Oxygen (SIMOX) Wafers Studied by Slow Positron Beams
Z.Q. Chen; A. Uedono; A. Ogura; H. Ono; R. Suzuki; T. Oh...
Appl. Surf. Sci. 194, 112-115 (2002)./194/p.112-115, 2002-01 - Study of Oxygen Vacancies in SrTiO3 by Positron Annihilation
A. Uedono; K. Shimayama; M. Kiyohara; Z.Q. Chen; K. Yamabe
J. Appl. Phys. 92, 2697-2702 (2002)./92/p.2697-2702, 2002-01 - Epitaxial Growth of BaTiO3/SrTiO3 Structures on SrTiO3 Substrate with Automatic Feeding of Oxygen from the Substrate
K. Shimoyama; M. Kiyohara; K. Yamabe; A. Uedono
J. Appl. Phys. 92, 4625-4630 (2002)./92/p.4625-4630, 2002-01 - Homeoepitaxial growth of SrTiO3 in an ultrahigh vacuum with automatic feeding of oxygen from the substrate at temperatures as low as 370oC
K. Shimoyama; M. Kiyohara; A. Uedono; K. Yamabe
Jpn. J. Appl. Phys. 41, L269-L271 (2002)./41/p.L269-L271, 2002-01 - Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
T. Ohshima; A. Uedono; O. Eryu; K.K. Lee; K. Abe; H. Ito...
Materials Science Forum/433/436/p.633-636, 2003-01 - Degradation of Dielectric Characterizations of Underlying Ultrathin SiO2 films by Al Adsorption in High Vacuum
M. Tanabe; M. Goto; A. Uedono; K. Yamabe
Extended Abstracts of International Workshop on Gate Insulator 2003, November 6-7, 2003, Tokyo, Japan, p. 18-19./p.18-19., 2003-01 - Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation
A. Uedono; R. Mitsuhashi; A. Horiuchi; K. Torii; K. Yama...
Extended Abstracts of International Workshop on Gate Insulator 2003, November 6-7, 2003, Tokyo, Japan, p. 120-123./p.120-123., 2003-01 - さらに表示...
- Temperature and Irradiation Effects on Positronium Formation in Polycarbonate