上殿 明良(ウエドノ アキラ)
- 論文
- Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks
R. Mitsuhashi; A. Horiuchi; A. Uedono; K. Torii
Extended Abstracts of International Workshop on Gate Insulator 2003, November 6-7, 2003, Tokyo, Japan, p. 150-154/p.150-154, 2003-01 - Vacancy-type defects in SOI wafers probed by a monoenergetic positron beam
A. Uedono; A. Ogura; N. Hattori; J. Kudo; S. Nishikawa
Proceedings of the Forum on the Science and Technology of Silicon Materials 2003, November 25-27 (2003) Kanagawa, Japan, p. 272-280./p.272-280., 2003-01 - Positron Annihilation Study of Free Volume Holes in Polymers and Polymer Blends
Z.Q. Chen; A. Uedono; T. Suzuki; J.S. He
J. Radioanalytical and Nuclear Chemistry 255, 291-294 (2003)./255/p.291-294, 2003-01 - Defects in ZnO Thin Films Grown on ScAlMgO4 Substrates Probed by a Monoenergetic Positron Beam
A. Uedono; T. Koida; A. Tsukazaki; M. Kawasaki; Z.Q. Che...
J. Appl. Phys. 93, 2481-2485 (2003)./93/p.2481-2485, 2003-01 - Hydrogen-Terminated Defects in Ion-Implanted Silicon Probed by Monoenergetic Positron Beams
A. Uedono; T. Mori; K. Morisawa; K. Murakami; T. Ohdaira...
J. Appl. Phys. 93, 3228-3234 (2003)./93/p.3228-3234, 2003-01 - Defects in Eu- and Tb-doped GaN Probed Using a Monoenergetic Positron Beam
A. Uedono; H. Bang; K. Horibe; S. Morishima; K. Akimoto
J. Appl. Phys. 93, 5181-5184 (2003)./93/p.5181-5184, 2003-01 - Improvement of Hydrogen Absorption Rate of Pd by Ion Implantation
H. Abe; H. Uchida; Y. Azuma; A. Uedono; Z.Q. Chen; H. Ito
Nucl. Inst. & Methods B 206, 224-227 (2003)./206/p.224-227, 2003-01 - Defects in CeO2/SrTiO3 fabricated by automatic feeding epitaxy probed using positron annihilation
A. Uedono; K. Shimoyama; M. Kiyohara; K. Yamabe
J. Appl. Phys. 94, 5193-5198 (2003)./94/p.5193-5198, 2003-01 - Defects Introduced into SrTiO3 by Auto-Feeding-Epitaxy Studied Using Positron Annihilation Technique
A. Uedono; M. Kiyohara; K. Shimoyama; K. Yamabe; T. Ohda...
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING/6/p.367-369, 2003-01 - Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO
T. Koida; S. F. Chichibu; A. Uedono A. Tsukazaki; M. Kaw...
Appl. Phys. Lett. 82, 532-534 (2003)./82/p.532-534, 2003-01 - Suppression of the transient current of MOS consisting of HfAlOx as gate dielectrics studied by positron annihilation
A. Uedono; R. Mitsuhashi; A. Horiuchi; K. Torii; K. Yama...
Extended Abstracts of 2004 International Workshop on Dielectric Thin Films for Future ULSI Device, May 26-28 (2004) Tokyo, Japan, p. 120-123./p.120-123., 2004-01 - Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam
A. Uedono; M. Kiyohara; K. Shimoyama; Y. Matsunaga; N...
Materials Science Forum 445-446, 201-203 (2004)./p.201-203, 2004-01 - Point defects in thin HfAlOx films probed by monoenergetic positron beams
A. Uedono; R. Mitsuhashi; A. Horiuchi; K. Torii; K. Yama...
Materials Research Society Symposium Proceedings/786/p.E1.2.1-E1.2.6, 2004-01 - Direct observation of vacancy defects in electroplated Cu films
T. Suzuki; A.Uedono; T. Nakamura; Y. Mizushima; H. Kitada...
Proc. 2004 IEEE Int. Interconnect. Tech. Conf., June 7-9 (2004) San Francisco, USA, p. 87-89./p.87-89., 2004-01 - Radiative and Nonradiative Processes in Strain-Free AlxGa1-xN Films Studied by Time-Resolved Photoluminescence and Positron Annihilation Techniques
T. Onuma; S. F. Chichibu; A. Uedono; T. Sota; P. Cantu; T...
J. Appl. Phys. 95, 2495-2504 (2004)./95/p.2495-2504, 2004-01 - Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrate by Metalorganic Vapor Phase Epitaxy
M. Sugiyama; T. Nosaka; T. Suzuki; T. Koida; K. Nakajima...
Jpn. J. Appl. Phys. 43, 958-965 (2004)./43/p.958-965, 2004-01 - Vacancy-Type Defects in Electroplated Cu Films Probed by Using a Monoenergetic Positron Beam
A. Uedono; T. Suzuki; T. Nakamura
J. Appl. Phys. 95, 913-917 (2004)./95/p.913-917, 2004-01 - Characterizing metal-oxide-semiconductor structures consisting of HfSiOx as gate dielectrics using monoenergetic positron beams
A. Uedono; N. Hattori; A. Ogura; J. Kudo; S. Nishikawa; T...
Jpn. J. Appl. Phys. 43, 1254-1259 (2004)./43/p.1254-1259, 2004-01 - Charge trapping by oxygen-related defects in HfO2-based high-k gate dielectrics
K. Yamabe; M. Goto; K. Higuchi; A. Uedono; K. Shiraishi; ...
IEEE 2005 Int. Reliability Physics Symposium Proceeding, (2005) p. 648-649./p.648-649., 2005-01 - 陽電子を用いた材料中の空孔型欠陥の評価
上殿明良; 大塚崇; 伊東健一; 森和照; 大平俊行; 鈴木良一; 石橋章司
放射線と産業 112, 13-17 (2006)./112/p.13-17, 2006-01 - A study of interaction of Hf and SiO2 film for high-k materials
T-W. Chiu; M. Tanabe; A. Uedono; R. Hasunuma; K. Yamabe
Jpn. J. Appl. Phys., 45 6253-6255 (2006)./45/p.6253-6255, 2006-01 - Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
A. Watanabe; T. Watanabe; Y. J. Shan; K. Tezuka; H. Imot...
Bull. Chem. Soc. Jpn., 79 1787-1792 (2006)./79/p.1787-1792, 2006-01 - Positron annihilation studies on the behaviour of vacancies in LaAlO3/SrTiO3 heterostructures
Yuan Guoliang; Li Chen; Yin Jiang; Liu Zhiguo; Wu Di; Ued...
JOURNAL OF PHYSICS D-APPLIED PHYSICS/45(44), 2012-11 - 1a-SG-13 陽電子消滅の温度・スペクトル2次元相関測定法の開発とAl合金中の熱平衡欠陥
伊藤 和彦; 鈴木 良一; 上殿 明良; 谷川 庄一郎
年会講演予稿集/37(2)/p.40, 1982-09 - 1a-SG-14 BGO64検出器陽電子消滅角相関装置の製作
松岡 是治; 伊藤 和彦; 寺門 信悟; 岩瀬 吉倫; 上殿 明良; 鈴木 良一; 谷川 庄一郎
年会講演予稿集/37(2)/p.40, 1982-09 - さらに表示...
- Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks