上殿 明良(ウエドノ アキラ)

研究者情報全体を表示

論文

• 陽電子消滅による窒化物光半導体の点欠陥の評価(<特集>窒化物半導体結晶中の欠陥)
  上殿 明良; 石橋 章司; 大島 永康; 大平 俊行; 鈴木 良一
  日本結晶成長学会誌/36(3)/pp.155-165, 2009-10
  
  CiNii
• III族窒化物半導体(Al,Ga)Nにおける発光特性と点欠陥の相関関係(<特集>窒化物半導体結晶中の欠陥)
  秩父 重英; 上殿 明良
  日本結晶成長学会誌/36(3)/pp.166-177, 2009-10
  
  CiNii
• AlNエピタキシャル薄膜における励起子発光機構(窒化物及び混晶半導体デバイス)
  尾沼 猛儀; 羽豆 耕治; 宗田 孝之; 上殿 明良; 秩父 重英
  電子情報通信学会技術研究報告. CPM, 電子部品・材料/109(289)/pp.29-32, 2009-11
  
  CiNii
• AlNエピタキシャル薄膜における励起子発光機構(窒化物及び混晶半導体デバイス)
  尾沼 猛儀; 羽豆 耕治; 宗田 孝之; 上殿 明良; 秩父 重英
  電子情報通信学会技術研究報告. ED, 電子デバイス/109(288)/pp.29-32, 2009-11
  
  CiNii
• AlNエピタキシャル薄膜における励起子発光機構(窒化物及び混晶半導体デバイス)
  尾沼 猛儀; 羽豆 耕治; 宗田 孝之; 上殿 明良; 秩父 重英
  電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス/109(290)/pp.29-32, 2009-11
  
  CiNii
• 低速陽電子ビームを用いたCu/low-k配線構造中の欠陥検出(配線・実装技術と関連材料技術)
  上殿 明良; 井上 尚也; 林 喜宏; 江口 和弘; 中村 友二; 廣瀬 幸範; 吉丸 正樹; 大島 永康; 大平...
  電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス/109(412)/pp.49-52, 2010-01
  
  CiNii
• 20aHT-7 陽電子プローブマイクロアナライザーによる延伸鉄試料の欠陥評価(20aHT 領域10 格子欠陥・ナノ構造(水素,ナノ粒子,金属),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
  大島 永康; 鈴木 良一; 大平 俊行; 木野村 淳; 窪田 翔二; 渡邉 宏理; 上殿 明良; 藤浪 真紀; 打...
  日本物理学会講演概要集/65(1)/p.970, 2010-03
  
  CiNii
• 陽電子消滅による材料評価技術
  上殿 明良
  應用物理/79(4)/pp.307-311, 2010-04
  
  CiNii
• Reversible photodissociation of hexacarbonyl tungsten in cross-linked polymers
  Watanabe Akira; Watanabe Tomoko; Shan Yue Jin; Tezuka Ke...
  BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN/79(11)/pp.1787-1792, 2006-11
  
  CiNii
• Effect of growth temperature on the properties of Ga(In)NAs thin films by atomic hydrogen-assisted RF-MBE
  Shimizu Yukiko; Miyashita Naoya; Mura Yusuke; Uedono Aki...
  JOURNAL OF CRYSTAL GROWTH/301/pp.579-582, 2007-04
• Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
  Chichibu S. F.; Uedono A.; Onuma T.; Haskell B. A.; Chakr...
  PHILOSOPHICAL MAGAZINE/87(13)/pp.2019-2039, 2007-01
• Characterization of metal/high-k structures using monoenergetic positron beams
  Uedono Akira; Naito Tatsuya; Otsuka Takashi; Ito Kenichi...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(5B)/pp.3214-3218, 2007-05
• Local bonding structure of high-stress silicon nitride film modified by UV curing for strained silicon technology beyond 45 nm node SoC devices
  Miyagawa Yoshihiro; Murata Tatsunori; Nishida Yukio; Naka...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(4B)/pp.1984-1988, 2007-04
• Defects in electroplated cu and their impact on stress migration reliability studied using monoenergetic positron beams
  Uedono Akira; Suzuki Takashi; Nakamura Tomoji; Ohdaira T...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(4B)/pp.1938-1941, 2007-04
• Guiding principle of energy level controllability of silicon dangling bonds in HfSiON
  Umezawa Naoto; Shiraishi Kenji; Miyazaki Seiichi; Uedono ...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(4B)/pp.1891-1894, 2007-04
• Relation between AI vacancies and deep emission bands in AIN epitaxial films grown by NH3-source molecular beam epitaxy
  Koyama T.; Sugawara M.; Hoshi T.; Uedono A.; Kaeding J. ...
  APPLIED PHYSICS LETTERS/90(24)/pp.0-0, 2007-06
• Microstructural characterization of electroplated copper films on copper-alloy seed layer
  Hirose Yukinori; Honda Kazuhito; Maekawa Kazuyoshi; Miyaz...
  BUNSEKI KAGAKU/56(6)/pp.465-470, 2007-06
• Impact of residual impurities on annealing properties of vacancies in electroplated Cu studied using monoenergetic positron beams
  Uedono Akira; Mori Kazuteru; Ito Kenichi; Imamizu Kentar...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/46(20-24)/pp.0-0, 2007-06
• Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams
  Uedono A.; Inumiya S.; Matsuki T.; Aoyama T.; Nara Y.; Is...
  JOURNAL OF APPLIED PHYSICS/102(5)/pp.0-0, 2007-09
• Annealing properties of open volumes in strained SiN films studied by monoenergetic positron beams
  Uedono A.; Ito K.; Narumi T.; Sometani M.; Yamabe K.; Miy...
  JOURNAL OF APPLIED PHYSICS/102(6)/pp.0-0, 2007-09
• Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams
  Uedono A.; Ito K.; Nakamori H.; Mori K.; Nakano Y.; Kachi...
  JOURNAL OF APPLIED PHYSICS/102(8)/pp.0-0, 2007-10
• Impact of high temperature annealing on traps in physical-vapor-deposited-TiN/SiO2/Si analyzed by positron annihilation
  Matsuki Takeo; Watanabe Toshinari; Miura Takayoshi; Mise ...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/46(45-49)/pp.0-0, 2007-12
• Annihilation characteristics of positrons in free-standing thin metal and polymer films
  Uedono A.; Ito K.; Nakamori H.; Ata S.; Ougizawa T.; Ito ...
  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS/266(5)/pp.750-754, 2008-03
• Brightness enhancement method for a high-intensity positron beam produced by an electron accelerator
  Oshima Nagayasu; Suzuki Ryoichi; Ohdaira Toshiyuki; Kinom...
  JOURNAL OF APPLIED PHYSICS/103(9)/pp.0-0, 2008-05
• Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam
  Uedono A.; Shaoqiang C.; Jongwon S.; Ito K.; Nakamori H....
  JOURNAL OF APPLIED PHYSICS/103(10)/pp.0-0, 2008-05
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