上殿 明良(ウエドノ アキラ)
- 論文
- Spin-dependent momentum density distribution and Fermi surface of Ho via 2D-ACAR measurements
Hamid AS; Uedono A
PHYSICA STATUS SOLIDI B-BASIC RESEARCH/241(4)/pp.856-863, 2004-03 - Radiative and nonradiative processes in strain-free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques
Onuma T; Chichibu SF; Uedono A; Sota T; Cantu P; Katona TM; Kea...
JOURNAL OF APPLIED PHYSICS/95(5)/pp.2495-2504, 2004-03 - Characterizing metal-oxide semiconductor structures consisting of HfSiOx as gate dielectrics using monoenergetic positron beams
Uedono A; Hattori N; Ogura A; Kudo J; Nishikawa S; Ohdair...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS/43(4A)/pp.1254-1259, 2004-04 - Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques
Koida T; Uedono A; Tsukazaki A; Sota T; Kawasaki M; Chich...
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH/201(12)/pp.2841-2845, 2004-09 - Spin dependent momentum density and Fermi surface of ferromagnetic Ni obtained by positron annihilation experiments
Hamid AS; Uedon A
PHYSICA STATUS SOLIDI B-BASIC RESEARCH/241(13)/pp.2962-2967, 2004-11 - Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer
Onuma T; Chichibu SF; Uedono A; Yoo YZ; Chikyow T; Sota T; Kawa...
APPLIED PHYSICS LETTERS/85(23)/pp.5586-5588, 2004-12 - Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers
Chichibu SF; Sugiyama M; Nozaka T; Suzuki T; Onuma T; Nak...
JOURNAL OF CRYSTAL GROWTH/272(1-4)/pp.481-488, 2004-12 - Characterization of Hf0.3Al0.7Ox fabricated by atomic-layer-deposition technique using monoenergetic positron beams
Uedono A; Goto M; Higuchi K; Shiraishi K; Yamabe K; Kitaj...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS/43(11B)/pp.7848-7852, 2004-11 - Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
Chichibu SF; Uedono A; Onuma T; Sota T; Haskell BA; DenBaars S...
APPLIED PHYSICS LETTERS/86(2)/pp.0-0, 2005-01 - Vacancy-type defects in strained-Si layers deposited on SiGe/Si structures probed by using monoenergetic positron beams
Uedono A; Hattori N; Naruoka H; Ishibashi S; Suzuki R; Oh...
JOURNAL OF APPLIED PHYSICS/97(2)/pp.0-0, 2005-01 - Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams
Uedono A; Chichibu SF; Higashiwaki M; Matsui T; Ohdaira ...
JOURNAL OF APPLIED PHYSICS/97(4)/pp.0-0, 2005-02 - Suppression of oxygen diffusion by thin Al2O3 films grown on SrTiO3 studied using a monoenergetic positron beam
Uedono A; Kiyohara M; Yasui N; +山部 紀久夫
JOURNAL OF APPLIED PHYSICS/97(3)/pp.0-0, 2005-02 - Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE
Shimizu Y; Kobayashi N; Uedono A; Okada Y
JOURNAL OF CRYSTAL GROWTH/278(1-4)/pp.553-557, 2005-05 - Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO
Chichibu SF; Uedono A; Tsukazaki A; Onuma T; Zamfirescu ...
SEMICONDUCTOR SCIENCE AND TECHNOLOGY/20(4)/pp.67-77, 2005-04 - Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams
Uedono A; Ikeuchi K; Yamabe K; Ohdaira T; Muramatsu M; Su...
JOURNAL OF APPLIED PHYSICS/98(2)/pp.0-0, 2005-07 - Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam
Uedono A; Suzuki T; Nakamura T; Ohdaira T; Suzuki R
JOURNAL OF APPLIED PHYSICS/98(4)/pp.0-0, 2005-08 - Identification of vacancy-type defects in ZnTe using positron annihilation spectroscopy
Hamid AS; Shaban H; Mansour BA; Uedono A
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE/202(10)/pp.1914-1918, 2005-08 - Vacancy-type defects and electronic structure of perovskite-oxide SrTiO3 from positron annihilation
Hamid AS; Uedono A; Chikyow T; Uwe K; Mochizuki K; Kawami...
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE/203(2)/pp.300-305, 2006-02 - Characterization of HfSiON gate dielectrics using monoenergetic positron beams
Uedono A; Ikeuchi K; Otsuka T; Shiraishi K; Yamabe K; Miy...
JOURNAL OF APPLIED PHYSICS/99(5)/pp.0-0, 2006-03 - Impact of nitridation on open volumes in HfSiOx studied using monoenergetic positron beams
Uedono A; Ikeuchi K; Otsuka T; Yamabe K; Eguchi K; Takaya...
APPLIED PHYSICS LETTERS/88(17)/pp.0-0, 2006-04 - Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects
Chichibu SF; Onuma T; Kubota M; Uedono A; Sota T; Tsukaza...
JOURNAL OF APPLIED PHYSICS/99(9)/pp.0-0, 2006-05 - Open volumes in SiN films for strained Si transistors probed using monoenergetic positron beams
Uedono A.; Ikeuchi K.; Otsuka T.; Ito K.; Yamabe K.; Kohn...
APPLIED PHYSICS LETTERS/88(25)/pp.0-0, 2006-06 - Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams
Uedono A.; Ikeuchi K.; Otsuka T.; Yamabe K.; Eguchi K.; T...
JOURNAL OF APPLIED PHYSICS/100(3)/pp.0-0, 2006-08 - Study of interactions of Hf and SiO2 film for high-k materials
Chiu Te-Wei; Tanabe Masaaki; Uedono Akira; Hasunuma Ryu; ...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/45(8A)/pp.6253-6255, 2006-08 - Defects in Ga(In)NAs thin films grown by atomic H-assisted molecular beam epitaxy
Shimizu Yukiko; Mura Yusuke; Uedono Akira; Okada Yoshitaka
JOURNAL OF APPLIED PHYSICS/100(6)/pp.0-0, 2006-09 - さらに表示...
- Spin-dependent momentum density distribution and Fermi surface of Ho via 2D-ACAR measurements