上殿 明良(ウエドノ アキラ)

研究者情報全体を表示

論文

• Characterization of Low-k/Cu Damascene Structures Using Monoenergetic Positron Beams
  Uedono Akira; Inoue Naoya; Hayashi Yoshihiro; Eguchi Kaz...
  JAPANESE JOURNAL OF APPLIED PHYSICS/48(12)/pp.0-0, 2009-12
  
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• Metal Ion Binding Properties of Novel Wool Powders
  Naik Radhika; Wen Guiqing; Dharmaprakash M. S.; Hureau S...
  JOURNAL OF APPLIED POLYMER SCIENCE/115(3)/pp.1642-1650, 2010-02
• Epitaxial DyScO3 films as passivation layers suppress the diffusion of oxygen vacancies in SrTiO3
  Yuan Guoliang; Nishio Kazunori; Lippmaa Mikk; Uedono Akira
  JOURNAL OF PHYSICS D-APPLIED PHYSICS/43(2)/pp.0-0, 2010-01
• Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN
  Chen Shaoqiang; Uedono Akira; Ishibashi Shoji; Tomita Sh...
  APPLIED PHYSICS LETTERS/96(5)/pp.0-0, 2010-02
• Identification of extremely radiative nature of AlN by time-resolved photoluminescence
  Onuma T.; Hazu K.; Uedono A.; Sota T.; Chichibu S. F.
  APPLIED PHYSICS LETTERS/96(6)/pp.0-0, 2010-02
• Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar, 10(1)over-bar(1)over-bar GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
  Onuma T.; Uedono A.; Asamizu H.; Sato H.; Kaeding J. F.; ...
  APPLIED PHYSICS LETTERS/96(9)/pp.0-0, 2010-03
• Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
  Uedono Akira; Tsutsui Kazuo; Ishibashi Shoji; Watanabe H...
  JAPANESE JOURNAL OF APPLIED PHYSICS/49(5:Part 1)/pp.0-0, 2010-05
• Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy
  Yoshikawa Akihiko; Wang Xinqiang; Ishitani Yoshihiro; Ued...
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE/207(5)/pp.1011-1023, 2010-05
• Characterization of photoresists for ArF-excimer laser lithography using monoenergetic positron beams
  Uedono A; Ohdaira T; Suzuki R; Mikado T; Fukui S; Kimura ...
  JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS/42(2)/pp.341-346, 2004-01
• Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam
  Uedono A; Suzuki T; Nakamura T
  JOURNAL OF APPLIED PHYSICS/95(3)/pp.913-918, 2004-02
• Radiative and nonradiative excitonic transitions in nonpolar (11(2)over-bar-0) and polar (000(1)over-bar) and (0001) ZnO epilayers
  Koida T; Chichibu SF; Uedono A; Sota T; Tsukazaki A; Kawasaki M
  APPLIED PHYSICS LETTERS/84(7)/pp.1079-1081, 2004-02
• Reduced defect densities in cubic GaN epilayers with AlGaN/GaN superlattice underlayers grown on (001) GaAs substrates by metalorganic vapor phase epitaxy
  Sugiyama M; Nosaka T; Suzuki T; Koida T; Nakajima K; Aoya...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/43(3)/pp.958-965, 2004-03
  
  CiNii
• Defects introduced into SrTiO3 by auto-feeding epitaxy studied using positron annihilation technique
  Uedono A; Kiyohara M; Shimoyama K; Yamabe K; Ohdaira T; S...
  MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING/6(5-6)/pp.367-369, 2003-10
• Spin-dependent momentum density distribution and Fermi surface of Ho via 2D-ACAR measurements
  Hamid AS; Uedono A
  PHYSICA STATUS SOLIDI B-BASIC RESEARCH/241(4)/pp.856-863, 2004-03
• Radiative and nonradiative processes in strain-free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques
  Onuma T; Chichibu SF; Uedono A; Sota T; Cantu P; Katona TM; Kea...
  JOURNAL OF APPLIED PHYSICS/95(5)/pp.2495-2504, 2004-03
• Characterizing metal-oxide semiconductor structures consisting of HfSiOx as gate dielectrics using monoenergetic positron beams
  Uedono A; Hattori N; Ogura A; Kudo J; Nishikawa S; Ohdair...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS/43(4A)/pp.1254-1259, 2004-04
  
  CiNii
• Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques
  Koida T; Uedono A; Tsukazaki A; Sota T; Kawasaki M; Chich...
  PHYSICA STATUS SOLIDI A-APPLIED RESEARCH/201(12)/pp.2841-2845, 2004-09
• Spin dependent momentum density and Fermi surface of ferromagnetic Ni obtained by positron annihilation experiments
  Hamid AS; Uedon A
  PHYSICA STATUS SOLIDI B-BASIC RESEARCH/241(13)/pp.2962-2967, 2004-11
• Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer
  Onuma T; Chichibu SF; Uedono A; Yoo YZ; Chikyow T; Sota T; Kawa...
  APPLIED PHYSICS LETTERS/85(23)/pp.5586-5588, 2004-12
• Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers
  Chichibu SF; Sugiyama M; Nozaka T; Suzuki T; Onuma T; Nak...
  JOURNAL OF CRYSTAL GROWTH/272(1-4)/pp.481-488, 2004-12
• Characterization of Hf0.3Al0.7Ox fabricated by atomic-layer-deposition technique using monoenergetic positron beams
  Uedono A; Goto M; Higuchi K; Shiraishi K; Yamabe K; Kitaj...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS/43(11B)/pp.7848-7852, 2004-11
  
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• Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
  Chichibu SF; Uedono A; Onuma T; Sota T; Haskell BA; DenBaars S...
  APPLIED PHYSICS LETTERS/86(2)/pp.0-0, 2005-01
• Vacancy-type defects in strained-Si layers deposited on SiGe/Si structures probed by using monoenergetic positron beams
  Uedono A; Hattori N; Naruoka H; Ishibashi S; Suzuki R; Oh...
  JOURNAL OF APPLIED PHYSICS/97(2)/pp.0-0, 2005-01
• Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams
  Uedono A; Chichibu SF; Higashiwaki M; Matsui T; Ohdaira ...
  JOURNAL OF APPLIED PHYSICS/97(4)/pp.0-0, 2005-02
• Suppression of oxygen diffusion by thin Al2O3 films grown on SrTiO3 studied using a monoenergetic positron beam
  Uedono A; Kiyohara M; Yasui N; +山部 紀久夫
  JOURNAL OF APPLIED PHYSICS/97(3)/pp.0-0, 2005-02
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