上殿 明良(ウエドノ アキラ)

研究者情報全体を表示

論文

• Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation
  Uedono A.; Naito T.; Otsuka T.; Shiraishi K.; Yamabe K.; ...
  JOURNAL OF APPLIED PHYSICS/100(6)/pp.0-0, 2006-09
• Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
  Chichibu Shigefusa; Uedono Akira; Onuma Takeyoshi; Haskel...
  NATURE MATERIALS/5(10)/pp.810-816, 2006-10