上殿 明良(ウエドノ アキラ)
- 論文
- Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects
Chichibu SF; Onuma T; Kubota M; Uedono A; Sota T; Tsukaza...
JOURNAL OF APPLIED PHYSICS/99(9)/pp.0-0, 2006-05 - Open volumes in SiN films for strained Si transistors probed using monoenergetic positron beams
Uedono A.; Ikeuchi K.; Otsuka T.; Ito K.; Yamabe K.; Kohn...
APPLIED PHYSICS LETTERS/88(25)/pp.0-0, 2006-06 - Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams
Uedono A.; Ikeuchi K.; Otsuka T.; Yamabe K.; Eguchi K.; T...
JOURNAL OF APPLIED PHYSICS/100(3)/pp.0-0, 2006-08 - Study of interactions of Hf and SiO2 film for high-k materials
Chiu Te-Wei; Tanabe Masaaki; Uedono Akira; Hasunuma Ryu; ...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/45(8A)/pp.6253-6255, 2006-08 - Defects in Ga(In)NAs thin films grown by atomic H-assisted molecular beam epitaxy
Shimizu Yukiko; Mura Yusuke; Uedono Akira; Okada Yoshitaka
JOURNAL OF APPLIED PHYSICS/100(6)/pp.0-0, 2006-09 - Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation
Uedono A.; Naito T.; Otsuka T.; Shiraishi K.; Yamabe K.; ...
JOURNAL OF APPLIED PHYSICS/100(6)/pp.0-0, 2006-09 - Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
Chichibu Shigefusa; Uedono Akira; Onuma Takeyoshi; Haskel...
NATURE MATERIALS/5(10)/pp.810-816, 2006-10
- Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects