上殿 明良(ウエドノ アキラ)
- 論文
- Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE
Shimizu Y; Kobayashi N; Uedono A; Okada Y
JOURNAL OF CRYSTAL GROWTH/278(1-4)/pp.553-557, 2005-05 - Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO
Chichibu SF; Uedono A; Tsukazaki A; Onuma T; Zamfirescu ...
SEMICONDUCTOR SCIENCE AND TECHNOLOGY/20(4)/pp.67-77, 2005-04 - Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams
Uedono A; Ikeuchi K; Yamabe K; Ohdaira T; Muramatsu M; Su...
JOURNAL OF APPLIED PHYSICS/98(2)/pp.0-0, 2005-07 - Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam
Uedono A; Suzuki T; Nakamura T; Ohdaira T; Suzuki R
JOURNAL OF APPLIED PHYSICS/98(4)/pp.0-0, 2005-08 - Identification of vacancy-type defects in ZnTe using positron annihilation spectroscopy
Hamid AS; Shaban H; Mansour BA; Uedono A
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE/202(10)/pp.1914-1918, 2005-08 - Vacancy-type defects and electronic structure of perovskite-oxide SrTiO3 from positron annihilation
Hamid AS; Uedono A; Chikyow T; Uwe K; Mochizuki K; Kawami...
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE/203(2)/pp.300-305, 2006-02 - Characterization of HfSiON gate dielectrics using monoenergetic positron beams
Uedono A; Ikeuchi K; Otsuka T; Shiraishi K; Yamabe K; Miy...
JOURNAL OF APPLIED PHYSICS/99(5)/pp.0-0, 2006-03 - Impact of nitridation on open volumes in HfSiOx studied using monoenergetic positron beams
Uedono A; Ikeuchi K; Otsuka T; Yamabe K; Eguchi K; Takaya...
APPLIED PHYSICS LETTERS/88(17)/pp.0-0, 2006-04 - Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects
Chichibu SF; Onuma T; Kubota M; Uedono A; Sota T; Tsukaza...
JOURNAL OF APPLIED PHYSICS/99(9)/pp.0-0, 2006-05 - Open volumes in SiN films for strained Si transistors probed using monoenergetic positron beams
Uedono A.; Ikeuchi K.; Otsuka T.; Ito K.; Yamabe K.; Kohn...
APPLIED PHYSICS LETTERS/88(25)/pp.0-0, 2006-06 - Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams
Uedono A.; Ikeuchi K.; Otsuka T.; Yamabe K.; Eguchi K.; T...
JOURNAL OF APPLIED PHYSICS/100(3)/pp.0-0, 2006-08 - Study of interactions of Hf and SiO2 film for high-k materials
Chiu Te-Wei; Tanabe Masaaki; Uedono Akira; Hasunuma Ryu; ...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/45(8A)/pp.6253-6255, 2006-08 - Defects in Ga(In)NAs thin films grown by atomic H-assisted molecular beam epitaxy
Shimizu Yukiko; Mura Yusuke; Uedono Akira; Okada Yoshitaka
JOURNAL OF APPLIED PHYSICS/100(6)/pp.0-0, 2006-09 - Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation
Uedono A.; Naito T.; Otsuka T.; Shiraishi K.; Yamabe K.; ...
JOURNAL OF APPLIED PHYSICS/100(6)/pp.0-0, 2006-09 - Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
Chichibu Shigefusa; Uedono Akira; Onuma Takeyoshi; Haskel...
NATURE MATERIALS/5(10)/pp.810-816, 2006-10
- Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE