上殿 明良(ウエドノ アキラ)
- 論文
- Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films
Iwashita Shinya; Denpoh Kazuki; Kagaya Munehito; Kikuc...
THIN SOLID FILMS/660/pp.865-870, 2018-08 - Accelerator operation 2016
Sasa Kimikazu; Ishii Satoshi; Oshima Hiroyuki; Takahashi ...
UTTAC ANNUAL REPORT 2016/pp.3-4, 2017-09 - STATUS REPORT OF THE TANDEM ACCELERATOR COMPLEX AT THE UNIVERSITY OF TSUKUBA
Sasa Kimikazu; Ishii Satoshi; Oshima Hiroyuki; Takahashi ...
Proceedings of the 14th Annual Meeting of Particle Accelerator Society of Japan/pp.1371-1373, 2017-08 - Positron Annihilation Studies on Chemically Synthesized FeCo Alloy
Rajesh P; Sellaiyan Selvakumar; Uedono A; Arun T; Joseyph...
Scientific Reports/8/p.9764, 2018-06 - Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate
Chichibu S. F.; Shima K.; Kojima K.; Takashima S.; Edo M...
APPLIED PHYSICS LETTERS/112(21), 2018-05 - 筑波大学タンデム加速器施設UTTACの現状（2016年度）
森口 哲朗; 石井聡; 大島弘行; 高橋努; 田島義一; 大和良広; 関場 大一郎; 笹 公和; 上殿 明良
第30回タンデム加速器及びその周辺技術の研究会 講演要旨集, 2017-07 - Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams
Uedono Akira; Nabatame Toshihide; Egger Werner; Koschi...
JOURNAL OF APPLIED PHYSICS/123(15), 2018-04 - Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam
Koike Kazuto; Yano Mitsuaki; Gonda Shun-ichi; Uedono ...
JOURNAL OF APPLIED PHYSICS/123(16), 2018-04 - The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
Chichibu S. F.; Uedono A.; Kojima K.; Ikeda H.; Fujito K...
JOURNAL OF APPLIED PHYSICS/123(16), 2018-04 - Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams
Uedono Akira; Yamada Takahiro; Hosoi Takuji; Egger We...
APPLIED PHYSICS LETTERS/112(18), 2018-04 - 単結晶ダイヤモンド検出器の開発及び評価
原 明日翔; 田中 真伸; 金子 純一; 藤井 祐樹; 橋本 義徳; 平野 慎太郎; 水越 司; 西...
日本物理学会講演概要集/72(0)/pp.55-55, 2017 - Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams
Uedono Akira; Takashima Shinya; Edo Masaharu; Ueno Ka...
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS/255(4), 2018-04 - Spatio-time-resolved cathodoluminescence study on high AlN mole fraction AlxGa1-xN structures grown by metalorganic vapor phase epitaxy
Chichibu Shigefusa F.; Ishikawa Youichi; Furusawa Kent...
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016 - Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam
Uedono Akira; Takashima Shinya; Edo Masaharu; Ueno Ka...
2016 16th International Workshop on Junction Technology (IWJT)/pp.35-38, 2016 - Polarity Dependent Radiation Hardness of GaN
Matsuo Masayuki; Murayama Takayuki; Koike Kazuto; Sasa...
2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2015 - Vacancies in InxGa1−xN/GaN multiple quantum wells fabricated on m-plane GaN probed by a monoenergetic positron beam
Uedono Akira; Kurihara Kaori; Yoshihara Nakaaki; Nagao...
APPLIED PHYSICS EXPRESS/8(5)/p.51002, 2015-05 - 三次元積層向けウェハの裏面研削によるダメージ評価(配線・実装技術と関連材料技術)
水島 賢子; 金 永ソク; 中村 友二; 杉江 隆一; 橋本 秀樹; 上殿 明良; 大場 隆之
電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス/113(451)/pp.13-18, 2014-02 - 陽電子プローブ用静電加速システムの開発(28pAL X線・粒子線(電子線,陽電子),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
大島 永康; 木村 彰吾; 渡邊 智仁; 上殿 明良; 伊藤 賢志; オローク ブライアン; 鈴木 良一
日本物理学会講演概要集/69(1)/p.930, 2014-03 - 大気中湿度制御環境下における低速陽電子計測法の開発
大島 永康; Zhou Wei; 伊藤 賢志; Chen Zhe; O'Rourke Brian; 黒田...
日本物理学会講演概要集/67(1)/p.989, 2012-03 - 29aXZB-7 インダクションバンチャーを用いた高効率陽電子ビームパルス化システムの開発(29aXZB 領域10,ビーム物理領域合同 X線・粒子線(電子線・陽電子),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
金古 岳史; 林崎 規託; 大島 永康; 木野 村淳; O'Rourke Brian; 鈴木 良一; ...
日本物理学会講演概要集/68(1)/p.1049, 2013-03 - 29aXZB-8 産総研の新陽電子ビームライン施設の現状(29aXZB 領域10,ビーム物理領域合同 X線・粒子線(電子線・陽電子),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
オローク ブライアン; 大島 永康; 木野 村淳; 小川 博嗣; 鈴木 良一; 筒井 拓朗; 木村 ...
日本物理学会講演概要集/68(1)/p.1049, 2013-03 - Vacancy-type defects in InxGa1-xN grown on GaN templates probed using monoenergetic positron beams
Uedono Akira; Watanabe Tomohito; Kimura Shogo; Zhang ...
JOURNAL OF APPLIED PHYSICS/114(18), 2013-11 - An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy in Hf-based High-k Gate Oxides
N. Umezawa; K. Shiraishi; Y. Akasaka; S. Inumiya; A. Ued...
Trans. Material Res. Soc. Jpn./31/p.129-132, 2006-01 - Extensive Studies for the Effect of Nitrogen Incorporation into Hf-based High-k Gate Dielectrics
N. Umezawa; K. Shiraishi; H. Watanabe; K. Torii; Y. Akas...
ECS Transaction/2(1)/p.63-78, 2006-01 - The Positron Annihilation in GaAs Containing Defects
A. Uedono; Y. Iwase; S. Tanigawa
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 711-713./p.711-713, 1985-01 - さらに表示...
- Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films