蓮沼 隆(ハスヌマ リユウ)
- 会議発表等
- Development of a Novel System for Characterizing MOSFET Noise in Higher Frequency Regimes
Ohmori Kenji; Hasunuma Ryu; Yamada Keisaku
IEEE International Conference on Microelectronic Test Structures (ICMTS)/2012-03-20--2012-03-22 - Generation and Growth of Atomic-scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface
Hayashi Yuusuke; Hasunuma Ryu; Yamabe Kikuo
International Symposium on Technology Evolution for Silicon Nano-Electronics/2010-06-03--2010-06-05 - Comprehensive analysis of positive and negative bias temperature instabilities in high-k/metal gate stack metal-oxide-silicon field effect transistors with equivalent oxide thickness scaling to sub-1 nm
Sato Motoyuki; Yamabe Kikuo; Shiraishi Kenji; Miyazaki S...
International Conference on Solid State Devices and Materials - Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack
Chen Jun; Sekiguchi Takashi; Fukata Naoki; Takase Masami...
International Conference on Solid State Devices and Materials - Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films
Tamura Chihiro; Hayashi Tomohiro; Kikuchi Yuuki; Ohmori ...
International Workshop on Dielectric Thin Films for Future ULSI Devices - Vestiges of Multiple Progressive Dielectric Breakdown on HfSiON Surfaces
Hayashi Tomohiro; Tamura Chihiro; Sato Motoyuki; Hasunuma...
International Workshop on Dielectric Thin Films for Future ULSI Devices - Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing
Sometani Mitsuru; Hasunuma Ryu; Ogino Masaaki; Kuribayash...
International Workshop on Dielectric Thin Films for Future ULSI Devices - Roughness Increase on Surface and Interface of SiO2 Grown on Atomically Flat Si(111) Terrace
Ohsawa Keichiro; Hayashi Yusuke; Hasunuma Ryu; Yamabe Kikuo
International Workshop on Dielectric Thin Films for Future ULSI Devices - 2-D Roughening of SiO2 Thermally Grown on Atomically Flat Si Surface
Yamabe K.; Ohsawa K.; Hayashi Y.; Hasunuma R.
Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics held at the 215th ECS Meeting - Suppression of Leakage Current of Deposited SiO2 with Bandgap Increasing by High Temperature Annealing
Sometani M.; Hasunuma R.; Ogino M.; Kuribayashi H.; Sugah...
Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics held at the 215th ECS Meeting - Characterization of Threshold Voltage Shift by Negative Bias Temperature Stress in HfSiOx Films
Tamura Chihiro; Hayashia Tomohiro; Kikuchi Yuuki; Ohmori ...
Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics held at the 215th ECS Meeting - Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films during Electrical Stress Application
Hasunuma Ryu; Tamura Chihiro; Nomura Tsuyoshi; Kikuchi Y...
IEEE International Electron Devices Meeting (IEDM 2009) - Nommiformity in ultrathin SiO2 on Si(111) characterized by conductive atomic force microscopy
Hasunuma R; Okamoto J; Tokuda N; Yamabe K
International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4) - Transient capacitance in metal-oxide-semiconductor structures with stacked gate dielectrics
Goto M; Higuchi K; Torii K; Hasunuma R; Yamabe K
International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4)
- Development of a Novel System for Characterizing MOSFET Noise in Higher Frequency Regimes