都甲 薫(トコウ カオル)
- 論文
- Impact of the carbon membrane inserted below Ni in the layer exchange of multilayer graphene
Murata H.; Saitoh N.; Yoshizawa N.; Suemasu T.; Toko K.
CRYSTENGCOMM/22(18)/pp.3106-3109, 2020-05 - Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics
Tsuji M.; Kusano K.; Suemasu T.; Toko K.
APPLIED PHYSICS LETTERS/116(18), 2020-05 - 350 degrees C synthesis of high-quality multilayer graphene on an insulator using Ni-induced layer exchange
Murata Hiromasa; Nozawa Koki; Saitoh Noriyuki; Yoshizawa ...
APPLIED PHYSICS EXPRESS/13(5), 2020-05 - Manipulation of saturation magnetization and perpendicular magnetic anisotropy in epitaxial CoxMn4−xN films with ferrimagnetic compensation
Ito Keita; Yasutomi Yoko; Zhu Siyuan; Nurmamat Munisa; Ta...
Physical Review B/101(10), 2020-03 - Fe-induced layer exchange of multilayer graphene for rechargeable battery anodes
Nakajima Yoshiki; Murata Hiromasa; Kado Yuya; Matsumura ...
APPLIED PHYSICS EXPRESS/13(2), 2020-02 - Modeling the effects of defect parameters on the performance of a p-BaSi2/n-Si heterojunction solar cell
Deng Tianguo; Xu Zhihao; Yamashita Yudai; Sato Takuma; To...
Solar Energy Materials and Solar Cells/205, 2020-02 - Improving photoresponsivity in GaAs film grown on Al-induced-crystallized Ge on an insulator
Nishida T.; Suemasu T.; Toko K.
AIP Advances/10(1), 2020-01 - Magnetic reversal in rare-earth free Mn4 −xNixN epitaxial films below and above Ni composition needed for magnetic compensation around room temperature
Komori Taro; Hirose Taku; Gushi Toshiki; Toko Kaoru; Hana...
Journal of Applied Physics/127(4), 2020-01 - Improved thermoelectric performance of flexible p-type SiGe films by B-doped Al-induced layer exchange
Tsuji Mikie; Imajo Toshifumi; Saitoh Noriyuki; Yoshizawa ...
Journal of Physics D: Applied Physics/53(7), 2019-12 - Three-step growth of highly photoresponsive BaSi2 light absorbing layers with uniform Ba to Si atomic ratios
Yamashita Yudai; Sato Takuma; Saitoh Noriyuki; Yoshizawa ...
JOURNAL OF APPLIED PHYSICS/126(21)/p.215301, 2019-11 - High-electron-mobility (370 cm/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization
Saito M; Moto K; Nishida T; Suemasu T; Toko K
Scientific reports/9, 2019-11 - Impact of Amorphous-C/Ni Multilayers on Ni-Induced Layer Exchange for Multilayer Graphene on Insulators
Murata Hiromasa; Saitoh Noriyuki; Yoshizawa Noriko; Suema...
ACS OMEGA/4(10)/pp.14251-14254, 2019-09 - Investigation of defect levels in BaSi2 epitaxial films by photoluminescence and the effect of atomic hydrogen passivation
Benincasa Louise; Hoshida Hirofumi; Deng Tianguo; Sato...
JOURNAL OF PHYSICS COMMUNICATIONS/3(7), 2019-07 - Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass
Moto K.; Yamamoto K.; Imajo T.; Suemasu T.; Nakashima H....
APPLIED PHYSICS LETTERS/114(21), 2019-05 - 80 degrees C synthesis of thermoelectric nanocrystalline Ge film on flexible plastic substrate by Zn-induced layer exchange
Kusano Kinta; Tsuji Mikie; Suemasu Takashi; Toko Kaoru
APPLIED PHYSICS EXPRESS/12(5), 2019-05 - Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition
Nakajima Yoshiki; Murata Hiromasa; Saitoh Noriyuki; Yoshi...
ACS OMEGA/4(4)/pp.6677-6680, 2019-04 - High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer
Nishida T.; Moto K.; Saitoh N.; Yoshizawa N.; Suemasu T....
APPLIED PHYSICS LETTERS/114(14), 2019-04 - Minority carrier lifetime of Ge film epitaxial grown on a large-grain seed layer on glass
Nishida T.; Nakata M.; Suemasu T.; Toko K.
Thin Solid Films/681/pp.98-102, 2019-03 - Solid-phase crystallization of densified amorphous GeSn leading to high hole mobility (540 cm(2)/V s)
Moto K.; Saitoh N.; Yoshizawa N.; Suemasu T.; Toko K.
APPLIED PHYSICS LETTERS/114(11), 2019-03 - High-Electrical-Conductivity Multilayer Graphene Formed by Layer Exchange with Controlled Thickness and Interlayer
Murata Hiromasa; Nakajima Yoshiki; Saitoh Noriyuki; Yoshi...
Scientific Reports/9(1)/p.4068, 2019-03 - Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility
Takahara D.; Moto K.; Imajo T.; Suemasu T.; Toko K.
APPLIED PHYSICS LETTERS/114(8), 2019-02 - High hole mobility (>= 500 cm(2)V(-1)s(-1)) polycrystalline Ge films on GeO2-coated glass and plastic substrates
Imajo Toshifumi; Moto Kenta; Yoshimine Ryota; Suemasu Ta...
APPLIED PHYSICS EXPRESS/12(1), 2019-01 - Metal Catalysts for Layer-Exchange Growth of Multilayer Graphene
Nakajima Yoshiki; Murata Hiromasa; Saitoh Noriyuki; Yoshi...
ACS Applied Materials & Interfaces/10(48)/pp.41664-41669, 2018-11 - Thermoelectric Inorganic SiGe Film Synthesized on Flexible Plastic Substrate
Kusano Kinta; Yamamoto Atsushi; Nakata Mitsuki; Suemas...
ACS APPLIED ENERGY MATERIALS/1(10)/pp.5280-5285, 2018-10 - Improving carrier mobility of polycrystalline Ge by Sn doping
Moto Kenta; Yoshimine Ryota; Suemasu Takashi; Toko Kaoru
Scientific Reports/8(1), 2018-10 - さらに表示...
- Impact of the carbon membrane inserted below Ni in the layer exchange of multilayer graphene