都甲 薫(トコウ カオル)
- 論文
- Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy
Baba Masakazu; Tsurekawa Sadahiro; Watanabe Kentaro; Du W.; T...
Applied Physics Letters/103(14), 2013-09 - Large-grained polycrystalline (111) Ge films on insulators by thickness-controlled Al-induced crystallization
Nakazawa K.; Toko Kaoru; Saitoh N.; Yoshizawa N.; Usami N.; Su...
ESC Journal of Solid State Science and Technology/2(11)/pp.Q195-Q199, 2013-06 - Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates
Toko Kaoru; Fukata Naoki; Nakazawa Koki; Kurosawa Masashi; Us...
Journal of Crystal Growth/372/pp.189-192, 2013-06 - Orientation Control of Large-Grained Si Films on Insulators by Thickness-Modulated Al-Induced Crystallization
Numata Ryohei; Toko Kaoru; Saitoh Noriyuki; Yoshizawa Noriko...
Crystal Growth and Design/13(4)/pp.1767-1770, 2013-04 - Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)
Nakamura Kotaro; Toko Kaoru; Suemasu Takashi
J. Appl. Phys., 2013 - Hard X-ray photoelectron spectroscopy study on valence band structure of semiconducting BaSi2
Baba Masakazu; Toko Kaoru; Suemasu Takashi
J. Appl. Phys., 2013 - Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy
Baba Masakazu; Toko Kaoru; Suemasu Takashi
Appl. Phys. Lett./103, 2013 - Rotational and vibrational temperatures in a hydrogen discharge with a magnetic X-point
Tsankov Tsanko V.; Toko Kaoru; Czarnetzki Uwe
PHYSICS OF PLASMAS/19(12)/p.123503, 2012-12 - Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness
Okada Atsushi; Toko Kaoru; Hara Kosuke O.; Usami Noritak...
JOURNAL OF CRYSTAL GROWTH/356/pp.65-69, 2012-10 - Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization
Toko K.; Kurosawa M.; Saitoh N.; Yoshizawa N.; Usami N.; Miyao...
APPLIED PHYSICS LETTERS/101(7)/p.072106, 2012-08 - Negative spin polarization at the Fermi level in Fe4N epitaxial films by spin-resolved photoelectron spectroscopy
Ito Keita; Okamoto Kazuaki; Harada Kazunori; Sanai Tatsu...
JOURNAL OF APPLIED PHYSICS/112(1), 2012-07 - Investigation of the Recombination Mechanism of Excess Carriers in Undoped BaSi2 Films on Silicon
Hara O. Kosuke; Toko Kaoru; Suemasu Takashi
J. Appl. Phys., 2012 - SiGeミキシング誘起溶融成長によるGOI (Ge-on-Insulator) の形成
宮尾 正信; 都甲 薫
応用物理/81(5)/p.４１０, 2012 - Nano-lithography free formation of high density Ge-on-insulator network for epitaxial template
Yokoyama Hiroyuki; Toko Kaoru; Miyao Masanobu
Appl. Phys. Lett./100/p.092111, 2012 - Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells
Du Weijie; Suzuno Mitsushi; Khan M. Ajmal; Toh Katsuaki; ...
APPLIED PHYSICS LETTERS/100(15), 2012-04 - X-ray magnetic circular dichroism of ferromagnetic Co(4)N epitaxial films on SrTiO(3)(001) substrates grown by molecular beam epitaxy
Ito Keita; Harada Kazunori; Toko Kaoru; Ye Mao; Kimura A...
APPLIED PHYSICS LETTERS/99(25), 2011-12 - Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100),(110), and (111) Ge networks on insulators
Mizushima Ichiro; Toko Kaoru; Miyao Masanobu
Appl. Phys. Lett./98/p.182107, 2011 - Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth
Toko Kaoru
Appl. Phys. Lett./99/p.032103, 2011-4 - Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern
Toko Kaoru
Appl. Phys. Lett/98/p.042101, 2011-1 - Defect-free Ge-on-insulator with (100), (110), and (111) orientations by direction-selected melting-growth
Toko Kaoru
Appl. Phys. Lett./97/p.152101, 2010 - Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy
Toko Kaoru
Thin Solid Films, 2010 - Liquid-Phase Epitaxial Growth of Ge Island on Insulator Using Ni-Imprint-Induced Si Crystal as Seed
Toko Kaoru
Thin Solid Films/518/p.182, 2010 - High-Mobilities in Single-Crystal Ge Thin-Films Formed on Insulators by SiGe-Triggered Melting Growth
Toko Kaoru
Jpn. J. Appl. Phys./49, 2010 - (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth
Toko Kaoru
Appl. Phys. Express/3/p.075603, 2010 - High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth
Miyao Masanobu; Toko Kaoru
Appl. Phys. Lett./95/p.022115, 2009 - さらに表示...
- Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy