現在地

大井川 治宏(オオイガワ ハルヒロ; Oigawa, Haruhiro)

所属
数理物質系
職名
講師
研究分野
薄膜・表面界面物性
応用物性
電子デバイス・電子機器
研究キーワード
表面科学
エピタキシャル成長
電子デバイス
研究課題
窒化物半導体表面1998 -- 1998/国内共同研究
化合物半導体の表面処理に関する研究1990 -- (現在)/科学研究費補助金
硫黄処理表面でのエピタキシャル成長1992 -- (現在)/科学研究費補助金
デルタ・ドーピングによるGaAs表面構造の変化1997 -- (現在)/科学研究費補助金
所属学協会
-- (現在)応用物理学会
受賞
1998日本表面科学会 論文賞
論文
  • Development of laser-combined scanning multiprobe spectroscopy and application to analysis of WSe2/MoSe2 in-plane heterostructure
    Mogi Hiroyuki; Wang Zi-Han; Banba Takafumi; Takaguchi Yuh...
    Appl. Phys. Express/12(4)/p.045002, 2019-03
  • 時間分解走査トンネル顕微鏡によるスピンダイナミクス計測
    Shoji Yoshida; Osamu Takeuchi; Haruhiro Oigawa; Hidemi Sh...
    固体物理/53(4)/p.165, 2018-04
  • Optical pump-probe STM
    Shigekawa Hidemi; Shoji Yoshida; Osamu Takeuchi; Haruhiro...
    J. Electron Microsc. (Kenbikyo)/52(1)/p.46, 2017-02
  • Probing ultrafast spin dynamics with optical pump-probe scanning tunnelling microscopy
    Shoji Yoshida; Yuta Aizawa; Zi-han Wang; Ryuji Oshima; Yu...
    Nature Nanotechnology/9(8)/pp.588-593, 2014-08
  • Principles and Application of Heterodyne Scanning Tunnelling Spectroscopy
    Eiji Matsuyama; Takahiro Kondo; Haruhiro Oigawa; Donghui ...
    Scientific Reports/4, 2014-10
  • Bases for Time-Resolved Probing of Transient Carrier Dynamics by Optical Pump-Probe Scanning Tunneling Microscopy
    Yokota Munenori; Yoshida Shoji; Mera Yutaka; Takeuchi Osa...
    NANOSCALE/5(19)/pp.9170-9175, 2013-07
  • Optical pump-probe scanning tunneling microscopy for probing ultrafast dynamics on the nanoscale
    Yoshida Shoji; Terada Yasuhiko; Yokota Munenori; Takeuchi...
    The European Physical Journal Special Topics/222(5)/pp.1161-1175, 2013-07
  • The Effect of Sulfur on the Surface of III-V Compound Semiconductors
    Nannichi Y; Fan J; Oigawa H; Koma A
    Extended Abstracts 22nd Conference on Solid State Devices & Materials/pp.453-456, 1990-01
  • Stabilization of GaAs Surface/Interface by Sulfur Treatment
    Oigawa H; Fan J; Nannichi Y; Ando K; Saiki K; Koma A
    Extended Abstracts 20th Conference on Solid State Devices & Materials/pp.263-236, 1988-01
  • Synchrotron Radiation Photoemission Study on (NH4)2Sx-treated n-GaAs
    Sugahara H; Oshima M; Oigawa H; Shigekawa H; Nannichi Y
    Extended Abstracts 21st Conference on Solid State Devices & Materials/pp.547-548, 1991-08
  • Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy
    Oshima M; Scimeca T; Watanabe Y; Oigawa H; Nannichi Y
    Extended Abstracts 24th Conference on Solid State Devices & Materals/pp.545-547, 1992-08
  • Sulfur Structural and Chemical Bonding Changes for Metal/S-Passivated GaAs(111) Studied by the X-ray Standing Wave Technique and Synchrotron Radiation Photoemission Spectroscopy
    Sugiyama M; Maeyama S; Scimeca T; Oshima M; Oigawa H; Nan...
    Extended Abstracts 24th Conference on Solid State Devices & Materials/pp.536-538, 1992-08
  • Deposition of CaF2 and GaF3 on sulfur passivated GaAs (111)A, 100, and (111)B surfaces
    Scimeca T; Muramatsu Y; Oshima M; Oigawa H; Nannichi Y
    Journal of Applied Physics/71/p.4405, 1992-10
  • Surface Structures of GaAs(001) with Selenium Adsorbate Studied by Scanning Tunneling Microscopy
    Shigekawa H; Oigawa H; Miyake K; Aiso Y; Nannichi Y
    Proc. 1st International Symposium on Control of Semiconductor Interfaces/pp.573-574, 1994-01
  • Novel interlayer as an interfacial reaction suppressor in high GaAs Schottky barrier
    Oshima M; Scimeca T; Watanabe Y; Sugiyama M; Maeyama S; O...
    Proc. 1st International Symposium on Control of Semiconductor Interfaces/pp.199-204, 1994-01
  • Dimer Model for Comprehensive Interpretation of Selenium-Passivated GaAs(001) Surface Structures
    Shigekawa H; Oigawa H; Miyake K; Aiso Y; Nannichi Y
    Proc. 1st International Symposium on Control of Semiconductor Interfaces/pp.303-304, 1994-01
  • Surface Passivation of III-V Compound Semiconductors with Chalcogen Atoms
    Oigawa H; Shigekawa H; Nannichi Y
    Materials Science Forum/185-188/pp.191-198, 1995-01
  • Phase Transition between C(4×2) and P(2×2) Structures of the Si(100) Surface at 6K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion
    Shigekawa H; Miyake K; Ishida M; Hata K; Oigawa H; Nannic...
    Japanese Journal of Applied Physics/35(8B)/pp.L1081-L1084, 1996-01
  • Reconstruction of the GaAs(001) surface induced by submonolayer Be deposition
    Oigawa H; Wassermeier M; Behrend J; Daeweritz L; Ploog K. H
    Surface Science/376(4)/pp.185-191, 1997-01
  • Controlled anisotropic ordering of Be deposited on the GaAs(001) surface
    Oigawa H; Wassermeier M; Behrend J; Daeweritz L; Ploog K.H
    Surface Science/399/pp.39-48, 1998-01
  • Si(111) surface under phase transitions studied by the analysis of inner structures using bias-dependent scanning tunneling microscopy
    Miyake K; Kaikoh T; Li Y.-J.; Oigawa H; Shigekawa H
    Japanese Journal of Applied Physics/38(6B)/pp.3841-3844, 1999-01
  • STM/RHEED Observation of N-for-As Exchange Reaction on GaAs(001)-2×4 : As Surface
    Imayoshi T; Oigawa H; Shigekawa H; Tokumoto H
    Proceedings of Scanning Tunneling Microscopy/Spectroscopy and Related Proximal Probe Microscopy/pp.179-180, 1999-01
  • Initial Stage of Nitridation of GaAs(001) : Atomic Scale View
    Imayoshi T; Oigawa H; Shigekawa H; Tokumoto H
    Japanese Journal of Applied Physics/38(6B)/pp.3875-3878, 1999-01
  • Stability and nuclear formation of Si(111)-7×7 structure as determined from charge redistribution in surface layers
    Miyake K; Oigawa H; Hata K; Morita R; Yamashita M; Shigek...
    Surface Science/429(1-3)/pp.260-273, 1999-01
  • Surface reconstraction of GaAs(001) nitrided under the controlled As partial pressure
    Imayoshi T; Oigawa H; Shigekawa H; Tokumoto H
    Surface Science/540/pp.L577-L582, 2003-01
著書
  • 化合物半導体表面
    大井川 治宏
    ナノテクノロジーのための走査プローブ顕微鏡, 表面分析技術選書・丸善, pp.107-128, 2002-01
  • 半導体量子構造の解析
    大井川 治宏
    実戦ナノテクノロジー 走査プローブ顕微鏡と局所分光, 裳華房, pp.402-416, 2005-11
  • 薬品を扱うために/その他の技術
    大井川 治宏
    走査プローブ顕微鏡 -正しい実験とデータ解析のために必要なこと-, 実験物理科学シリーズ・共立出版, pp.145-153, 2009-03
会議発表等
  • Photoresponse of WSe2/MoSe2 in-plane heterostructure probed by a laser-combined multiprobe spectroscopy
    Mogi Hiroyuki; Wang Zi-Han; Bamba Takafumi; Takaguchi Yuh...
    Recent Progress in Graphene & 2D Materials Research (RPGR2019)/2019-10-06--2019-10-10
  • GaAs/GaInNAsSb系ヘテロ接合化合物太陽電池の作製と評価
    市川周平; 宮下直也; 上殿明良; 大井川治宏; 岡田至崇
    第69回応用物理学会学術講演会講演予稿集_応用物理学会_'08秋_3_/2008-09
  • パルス対励起型STMによる硫黄処理GaAs(001)表面のキャリアダイナミックスと基板依存性
    大井川治宏; 寺田康彦; 大久保淳史; 岩田康史; 藤田高士; 佐...
    第71回応用物理学会学術講演会講演予稿集_応用物理学会_'10秋_1_/2010-09
  • Nanoscale dynamics probed by laser-combined scanning tunneling microscopy
    Shigekawa Hidemi; Yoshida Shoji; Takeuchi Osamu; Aoyama M...
    7th International Conference on Nano-Molecular Electronics (ICNME2006)
知的財産権
  • ヘテロダインビートプローブ走査顕微鏡およびこれによってトンネル電流に重畳された微小信号の計測方法
    松山英治; 重川秀実; 根本承次郎; 中村潤児; 大井川治宏; 武...
担当授業科目
2019-10 -- 2020-02電子・物理工学特別研究VA筑波大学
2019-10 -- 2020-02電子・物理工学特別研究IA筑波大学
2019-10 -- 2020-02電子・物理工学特別研究IVA筑波大学
2020-01 -- 2020-02微積分3筑波大学
2019-10 -- 2019-12微積分2筑波大学
2019-04 -- 2019-08電子・物理工学特別研究IIIB筑波大学
2019-10 -- 2020-02電子・物理工学特別研究IIIA筑波大学
2019-04 -- 2019-08電子・物理工学特別研究IA筑波大学
2019-10 -- 2020-02電子・物理工学特別研究IB筑波大学
2019-10 -- 2020-02電子・物理工学特別研究IIB筑波大学

(最終更新日: 2019-07-16)