Okumura Hironori
- Affiliation
- Faculty of Pure and Applied Sciences
- Official title
- Assistant Professor
- ORCID
- 0000-0002-5464-9169
- KAKEN ID
- 80756750
- URL
- Research fields
Electronic materials/Electric materials Crystal engineering Thin film/Surface and interfacial physical properties - Research projects
Fabrication of vertical AlN devices 2023-04 -- 2027-03 Hironori Okumura Japan Society of for the Promotion of Science/Grant-in-Aid for Scientific Research(B) 14,300,000Yen Demonstration of pixel detectors with high radiation tolerant semiconductors 2022-04 -- 2023-03 Hironori Okumura TIA program/Kakehashi 1,910,000Yen Ga2O3 hot electron transistors 2021-10 -- 2023-03 Hironori Okumura SEI group CSR Foundation/Research grant 1,700,000Yen Activation mechanism of implanted impurities in III-Nitrides 2021-04 -- 2025-03 Akira Uedono Japan Society for the Promotion of Science/Grant-in-Aid for Scientific Research(B) 13,300,000Yen Normally-off operation of (AlGa)2O3/Ga2O3 HEMTs 2020-10 -- 2021-09 Hironori Okumura Samco Science and Technology Foundation/4th Research grant 2,000,000Yen Development of radiation-tolerance GaN optical detectors 2020-06 -- 2021-05 Hironori Okumura The Murata Science Foundation/36th Research grant 2,250,000Yen High radiation tolerant detector for radioactive isotope beam 2020-04 -- 2022-03 imura masataka TIA program/kakehashi 5,100,000Yen Development of normally-off (AlGa)2O3 MOSFETs 2020-04 -- 2021-03 Hironori Okumura The Asahi Glass Foundation/Research Grant 2,000,000Yen Nitride-based spintronics materials for ultrafast current-induced domain wall motion 2019-10 -- 2023-09 Takashi Suemasu Japan Society of for the Promotion of Science/Fostering Joint International Research (B) 18,330,000Yen Power devices using III-Oxides 2019-10 -- 2024-09 Hironori Okumura NEDO/feasibility study program/uncharted territory challenge 2050 99,958,000Yen more... - Career history
2018-04 -- (current) University of TsukubaAssistant Professor (Tenure) 2016-04 -- 2018-03 MITEECSvisiting researcher 2015-04 -- 2016-03 EPFLPhysicsvisiting researcher 2015-04 -- 2018-03 University of TsukubaAssistant Professor (Tenure Track) 2014-04 -- 2015-03 NTT Basic research laboratoryPost-doc 2012-04 -- 2014-03 UCSBMaterialsPost-doc (JSPS fellowship) - Academic background
2007-04 -- 2012-03 Kyoto University Electrical and Electronics Engineering 2003-04 -- 2007-03 Kyoto University Electrical and Electronics Engineering - Degree
2012-03 Ph.D, engineering Kyoto University - Licenses and qualifications
2014-10 Specified high pressure gas handling supervisor - Academic societies
2021-12 -- (current) JSAP Ionization Radiation Division 2019-12 -- (current) Japanese Society of Applied Physics 2019-12 -- 2021-12 Japanese Association for Crystal Growth 2016-12 -- 2018-12 Material Research Society - Honors & Awards
2021-03-08 CGCT Young Scientist Award 2020-11-17 Young Faculty Award in University of Tsukuba 2019-09-03 SSDM Young Researcher Award - Articles
- Mg implantation in AlN layers on sapphire substrates
Okumura Hironori; Uedono Akira
Jpn. J. Appl. Phys./62/p.020901, 2023/02 - Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection
Imura Masataka; Togawa Manabu; Miyahara Masaya; Okumura ...
Functional Diamond/2(1)/pp.167-174, 2023-01 - Sn and Si doping of α-Al2O3 (10-10) layers grown by plasma-assisted molecular beam epitaxy
Okumura Hironori
Japanese Journal of Applied Physics/61/p.125505, 2022-11 - Photoconductivity buildup and decay kinetics in unintentionally doped β-Ga2O3
Aboulaye Traore; Okumura Hironori; Sakurai Takeaki
Japanese Journal of Applied Physics, 2022-08 - Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing
Okumura Hironori
Japanese Journal of Applied Physics/61(2)/p.026501, 2022-02 - Optical and electrical properties of silicon-implanted α-Al2O3
Hironori Okumura; Riena Jinno; Akira Uedono; Masataka Imura
Japanese Journal of Applied Physics/60(10), 2021-09 - Electrical properties of heavily Sn-doped (AlGa)2O3 layers on β-Ga2O3 (010) substrates
Hironori Okumura
Japanese Journal of Applied Physics/60(6), 2021-06 - Photo-induced conductivity transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
Traore Aboulaye; Gouveia Maria; Okumura Hironori; Mannequ...
Japanese Journal of Applied Physics/60/pp.SBBD15-SBBD15-4, 2021-02 - Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy
Okumura Hironori
Japanese Journal of Applied Physics/59(7), 2020-06 - Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination
Okumura Hironori; Tanaka Taketoshi
Japanese Journal of Applied Physics/58(12), 2019-12 - Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
Lemettinen Jori; Chowdhury Nadim; Okumura Hironori; Ki...
IEEE ELECTRON DEVICE LETTERS/40(8)/pp.1245-1248, 2019-08 - Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)
Okumura Hironori; Kato Yuji; Oshima Takayoshi; Palacios Tomás
Jpn. J. Appl. Phys./58(SB::S)/p.SBBD12, 2019-03 - Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution
Okumura Hironori
JAPANESE JOURNAL OF APPLIED PHYSICS/58(2), 2019-02 - N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications
Lemettinen Jori; Okumura Hironori; Palacios Tomás; Suihko...
Applied Physics Express/11(10)/p.101002, 2018-09 - MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
Lemettinen J.; Okumura H.; Kim I.; Rudzinski M.; Grzonka ...
JOURNAL OF CRYSTAL GROWTH/487/pp.50-56, 2018-04 - MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
Lemettinen J.; Okumura H.; Kim I.; Kauppinen C.; Palacios...
JOURNAL OF CRYSTAL GROWTH/487/pp.12-16, 2018-04 - AlN metal–semiconductor field-effect transistors using Si-ion implantation
Okumura Hironori; Suihkonen Sami; Lemettinen Jori; Uedono...
Jpn. J. Appl. Phys./57(4:::SI)/p.04FR11, 2018-03 - Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Zhang Y.; Liu Zhihong; Tadjer Marko J.; Sun Min; Piedra ...
IEEE Electron Device Letters/38(8)/pp.1097-1100, 2017-08 - Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN
Okumura Hironori; Martin Denis; Grandjean Nicolas
APPLIED PHYSICS LETTERS/109(25), 2016-12 - Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam
Uedono Akira; Malinverni Marco; Martin Denis; Okumura ...
JOURNAL OF APPLIED PHYSICS/119(24), 2016-06 - Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
Okumura Hironori; Denis Martin; Marco Malinverni; Nicolas Gr...
Applied Physics Letters/108(7)/p.072102, 2016-02
- Mg implantation in AlN layers on sapphire substrates
- Books
- Other Research Environment
奥村 宏典
The Surface Science Society of Japan, 2016
- Other Research Environment
- Conference, etc.
- Electrical properties of silicon-implanted alpha-Al2O3
Okumura Hironori; Jinno Riena; UEdono Akira; Imura Masataka
The 4th International Workshop on Gallium Oxide and Related Materials/2022-10-23--2022-10-27 - Alpha-particle detectors with GaN PiN homoepitaxial layer
Okumura Hironori; Ogawara Yohei; Togawa Maanbu; Miyahara ...
2021 International Conference on Solid State Devices and Materials/2021-09-06--2021-09-09 - Photo-induced Conductivity Transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
Traore Aboulaye; Gouveia Maria; Hironori Okumura; Mannequ...
2020 International Conference on Solid State Devices and Materials SSDM 2020/2020-09-27--2020-09-30 - Electrical property of n-type β-(AlGa)2O3 layers with low Al composition
Okumura Hironori
8th Asian Conference on Crystal Growth and Crystal Technology/2021-03-01--2021-03-04 - Growth and electrical property of n-type β-(AlGa)2O3 layers
Okumura Hironori
Virtual Workshop on Materials Science and Advanced Electronics/2021-02-01--2021-02-03 - (AlGa)2O3/Ga2O3 resonant tunneling diodes
Okumura Hironori
Compound Semiconductor Week 2020/2020-05-17--2020-05-21 - Demonstration of m-plane GaN MOSFETs
Okumura Hironori
2019 International Conference on Solid State Devices and Materials/2019-09-02--2019-09-05 - Demonstration of (AlGa)2O3-channel MOSFETs
Okumura Hironori
2019 International Workshop on Gallium Oxide and related materials/2019-08-12--2019-08-15 - N-polar AlN POLFET
Okumura Hironori; Lemettinen Jori; Suihkonen Sami; Palaci...
International Workshop on Nitride Semiconductors/2018-11-11--2018-11-16 - Demonstration of beta-(AlGa)2O3(010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V
Okumura Hironori; Kato Yuji; Ohshima Takayoshi; Palacios ...
2018 International Conference on Solid State Devices and Materials/2018-09-09--2018-09-13 - Nitrogen-face AlN-based field-effect transistors
Okumura Hironori; Lemettinen Jori; Suihkonen Sami; Palaci...
Compound Semiconductor Week 2018/2018-05-29--2018-06-01 - AlN metal-semiconductor field-effect transistors using Si-ion implantation
Okumura Hironori
The 2017 MRS Fall Meeting & Exhibit/2017-11-26--2017-12-01 - AIN metal-semiconductor field-effect transistors using Si-ion implantation
Okumura Hironori; Suihkonen Sami; Lemettinen Jori; Ued...
International Conference on Solid State Devices and Materials (SSDM)/2017-09-19--2017-09-22 - Electrical Properties of Si-Ion Implanted AlN
Okumura Hironori; Sami Suihkonen Tomas Palacios
9th International Conference on Nitride Semiconductors/2017-07 - Electrical Properties of Mg-doped GaN with High Acceptor Concentrations
Okumura Hironori; Marco Malinverni Denis Martin Nicolas...
2016 Materials Research Societies Fall meeting/2016-12 - Highly p-type GaN for Advanced Optoelectronic Devices
Okumura Hironori; Malinverni Marco; Martin Denis; Grandje...
2016 IEEE Photonics Conference/2016-10 - Electrical Properties of Mg-doped GaN with High Acceptor Concentrations
Okumura Hironori; Marco Malinverni Denis Martin Nicolas...
19th International Conference on Molecular Beam Epitaxy/2016-09
- Electrical properties of silicon-implanted alpha-Al2O3
- Intellectural property rights
- 特願2021-168710
奥村 宏典 - 導電性AlNエピタキシャル膜付き基板及びその製造方法
奥村 宏典; 柴田 智彦; 渡邊 康弘
- 特願2021-168710
- Teaching
2022-10 -- 2023-02 Research in Applied Physics VA University of Tsukuba. 2022-10 -- 2023-02 Research in Applied Physics IVA University of Tsukuba. 2022-10 -- 2023-02 Research in Applied Physics IIIA University of Tsukuba. 2022-04 -- 2022-08 Research in Applied Physics IB University of Tsukuba. 2022-04 -- 2022-08 Research in Applied Physics VB University of Tsukuba. 2022-10 -- 2023-02 Research in Applied Physics IA University of Tsukuba. 2022-04 -- 2022-08 Research in Applied Physics IIIB University of Tsukuba. 2022-10 -- 2023-02 Research in Applied Physics IVB University of Tsukuba. 2022-04 -- 2022-08 Research in Applied Physics IIB University of Tsukuba. 2022-10 -- 2022-12 Solid State Physics 2 University of Tsukuba. more... - Other educational activities
2020-08 -- 2020-08 ナノテクノロジープラットフォーム学生研修プログラム(GaN HEMTの作製) 筑波大学 2019-05 -- (current) フレッシュマンセミナー体験配属(半導体デバイスの作製) 筑波大学 2019-08 -- (current) 応用理工サマースクール体験実験(SiC SBDの作製) 筑波大学 2018-07 -- 2018-07 電子工学特別講義 非常勤講師 大阪大学 2018-04 -- 2020-03 応用理工学類クラス担任 筑波大学 - Talks
- 導電性サファイヤの開発
奥村 宏典
Innovation Japan 2022/2022-10-04--2022-10-31 - Alpha- and beta-(AlGa)2O3 growth using Molecular Beam Epitaxy
Okumura Hironori
J-FAST kick-off meeting/2022-06-22--2022-06-24 - 窒化アルミニウム層中の不純物拡散
奥村 宏典
TREMS成果報告会/2021-03-11 - 高放射線耐性半導体を用いた重粒子線検出器の研究
奥村 宏典; 井村 将隆; 外川 学; 西永 慈郎; 宮原 正也
TIAナノエレの若手の会セミナー/2022-03-08 - Semiconductor devices in extreme environment
奥村 宏典
Researcher Matching Project 2021With Matching HUB Hokuriku/2021-11-05--2021-11-17 - ナノスケール加工に向けた電子線露光実習
奥村 宏典
微細加工技術 実践セミナー/2020-10-07 - 放射線耐性に優れた半導体素子の開発
奥村 宏典
JST新技術説明会/2020-10-04 - 酸化ガリウムの結晶成長と電子デバイスの作製
奥村 宏典
TREMS成果報告会/2020-03-11 - AlN結晶へのイオン注入
奥村 宏典
第162委員会 第116回研究会/2019-12-13--2019-12-14 - 電子ビーム露光装置を用いたGa2O3 FinFETとAlN光導波路の作製
奥村 宏典
電子ビームリソグラフィセミナーV/2019-11-27 - 放射線に負けないデバイスを使ってみよう!
奥村 宏典; 西永慈郎; 井村将隆; 外川学; 宮原正也
イノベーション・ジャパン2019-大学見本市/2019-08-29--2019-08-30 - 超ワイドバンドギャップ半導体を用いたトランジスタ動作
奥村 宏典
NTT 物性科学基礎研究所 セミナー/2019-07-19--2019-07-19 - 窒化アルミニウムおよび酸化ガリウムの結晶成長からトランジスタ作製まで
奥村 宏典
2019年度 第3回エネルギーマネージメント・材料デバイス技術分科会/2019-07-19--2019-07-19 - Crystal growth and devices for wide band-gap semiconductors over 5 eV
Okumura Hironori
Ohio State Univeristy, Seminar/2019-03-18--2019-03-18 - 省エネに向けた新規パワーデバイス材料に関する研究
奥村 宏典
産学連携シンポジウム/2019-03-15--2019-03-15 - 新規パワーデバイス用材料に関する研究
奥村 宏典
Nanotech expo 2019/2019-01-30--2019-02-01 - High-power devices using ultra wide bandgap semiconductors
Okumura Hironori
University of California, Santa Barbara, Seminar/2018-03-20--2018-3-20 - これまでの半導体とこれからの半導体
奥村 宏典
ボストン日本人研究者交流会/2018-03-17--2018-03-17 - 高濃度Mgドーピングによるp型GaN層の接触抵抗の低減
奥村 宏典
筑波大学数理物質系 専攻セミナー/2016-04-01--2016-04-01 - 垂直共振器面発光レーザー応用に向けたGaN層のトンネル接合
奥村 宏典
東京大学生産技術研究所 セミナー/2016-03-30--2016-03-30 - 高濃度 Mg ドーピングを行った p 型 GaN 層の低い接触抵抗
奥村 宏典
京都大学大学院工学研究科 セミナー/2016-03-29--2016-03-29 - P-Type Doping Control of Mg-doped AlGaN for deep-UV LEDs
Okumura Hironori; Yoshitaka Taniyasu; Hideki Yamamoto
Aalto University seminer/2015-09-14--2015-09-14 - New Devices using Wide-Bandgap Semiconductors
Okumura Hironori
3rd Meeting of Japanese young scientists in EU/2015-08-29--2015-08-29 - AlGaN growth using PAMBE and MOVPE
Okumura Hironori
EPFL seminar/2015-04-15
- 導電性サファイヤの開発
- Professional activities
2021-04 -- 2022-11 International Workshop on Gallium Oxide and Related Materials Program Committee 2020-03 -- 2022-02 Electronic Materials Symposium Secretaries 2020-01 -- 2022-12 International Conference on Solid State Devices and Materials Program Committee, Area 4 - University Management
2020-04 -- 2022-03 スポーツデー運営委員会 運営委員 2018-06 -- (current) Nano-tech Platform in the university of Tsukuba Steering Committee 2018-04 -- (current) Tsukuba Research Center for Energy Materials Science Member - Other activities
2022-08 -- 2025-03 Top Runners in Strategy of Transborder Advanced Researches (TRiSTAR), Fellow 2018-08 -- 2019-12 free English chat room (BiVi Tsukuba satellite office), Organizer 2018-04 -- 2019-03 MEXT NISTEP, Science and Technology Foresight Center, Investigator
(Last updated: 2023-03-15)